JP5995976B2 - 2次元ナノ素材により伝導性が向上した1次元伝導性ナノ素材基盤伝導性フィルム - Google Patents
2次元ナノ素材により伝導性が向上した1次元伝導性ナノ素材基盤伝導性フィルム Download PDFInfo
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- 239000002086 nanomaterial Substances 0.000 title claims description 114
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 116
- 229910021389 graphene Inorganic materials 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 13
- 239000011521 glass Substances 0.000 claims description 8
- 229910002804 graphite Inorganic materials 0.000 claims description 8
- 239000010439 graphite Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000004973 liquid crystal related substance Substances 0.000 claims description 5
- 239000004033 plastic Substances 0.000 claims description 5
- 229920003023 plastic Polymers 0.000 claims description 5
- 239000002109 single walled nanotube Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000007921 spray Substances 0.000 claims description 4
- 238000010306 acid treatment Methods 0.000 claims description 3
- 238000007598 dipping method Methods 0.000 claims description 3
- 238000007756 gravure coating Methods 0.000 claims description 3
- 238000007641 inkjet printing Methods 0.000 claims description 3
- 238000007759 kiss coating Methods 0.000 claims description 3
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- 238000010345 tape casting Methods 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 claims 6
- 239000002041 carbon nanotube Substances 0.000 description 59
- 229910021393 carbon nanotube Inorganic materials 0.000 description 59
- 239000010410 layer Substances 0.000 description 19
- 239000011248 coating agent Substances 0.000 description 14
- 238000000576 coating method Methods 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 229910052582 BN Inorganic materials 0.000 description 9
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000002070 nanowire Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000002834 transmittance Methods 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 5
- 238000001878 scanning electron micrograph Methods 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 239000002073 nanorod Substances 0.000 description 3
- -1 polyethylene terephthalate Polymers 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 229920000307 polymer substrate Polymers 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
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- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 238000001237 Raman spectrum Methods 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- CXRFFSKFQFGBOT-UHFFFAOYSA-N bis(selanylidene)niobium Chemical compound [Se]=[Nb]=[Se] CXRFFSKFQFGBOT-UHFFFAOYSA-N 0.000 description 1
- IYJABVNLJXJBTP-UHFFFAOYSA-N bis(selanylidene)tantalum Chemical compound [Se]=[Ta]=[Se] IYJABVNLJXJBTP-UHFFFAOYSA-N 0.000 description 1
- HITXEXPSQXNMAN-UHFFFAOYSA-N bis(tellanylidene)molybdenum Chemical compound [Te]=[Mo]=[Te] HITXEXPSQXNMAN-UHFFFAOYSA-N 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 239000002238 carbon nanotube film Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 1
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- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/24—Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon or silicon
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- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
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- C09D7/70—Additives characterised by shape, e.g. fibres, flakes or microspheres
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- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
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Description
さらに、炭素ナノチューブの場合、表面に気孔があって表面が粗くなることにより、光電子素子への利用に制約があるという問題点がある。
ここで、前記基板は、ガラス、水晶、ガラスウエハー、シリコンウエハーおよびプラスチックよりなる群から選ばれた1種からなることが好ましい。
まず、1次元伝導性ナノ素材層について説明する。
前述の状態で前記1次元伝導性ナノ素材層の上面に2次元ナノ素材層が形成される。
図2は1次元伝導性ナノ素材の上面に2次元ナノ素材が積層される形状を示す模式図であり、本発明の実施例では酸化グラフェンを使用した。
図5は酸化グラフェンの塗布前と後の透過度に対する面抵抗数値を示す図である。
本発明の第2実施例では、第1実施例と同様に、炭素ナノチューブ透明伝導膜を形成させた。また、上層部に塗布される2次元ナノ素材として窒化ホウ素(boron nitride)を使用した。
窒化ホウ素は、黒鉛と同様に、単層の2次元窒化ホウ素が多数層に積層されている構造である。
図10は上記で製造された各1枚に分離された2次元窒化ホウ素の走査電子顕微鏡写真を示す図であって、単一層からなっていることが分かる。
Claims (7)
- 基板と、前記基板の上面に形成された1次元電気伝導性ナノ素材層と、前記1次元電気伝導性ナノ素材層の上面に形成された2次元ナノ素材層とを含んで電気伝導性フィルムが形成され、
前記1次元電気伝導性ナノ素材層に含まれた1次元電気伝導性ナノ素材は単一壁炭素ナノチューブで形成され、
前記2次元ナノ素材層に含まれた2次元ナノ素材は酸化グラフェンで形成され、2次元ナノ素材により、前記2次元ナノ素材層が形成される前に比べ電気伝導性が向上した、プラズマディスプレイパネル(PDP)、液晶ディスプレイ(LCD)素子、発光ダイオード素子(LED)、有機電子発光素子(OLEL)、タッチパネルまたは太陽電池の何れかに用いられるための1次元電気伝導性ナノ素材基盤電気伝導性フィルム。 - 基板と、前記基板の上面に形成された1次元電気伝導性ナノ素材層と、前記1次元電気伝導性ナノ素材層の上面に形成された2次元ナノ素材層とを含んで電気伝導性フィルムが形成され、
前記基板は、ガラス、水晶、ガラスウエハー、シリコンウエハーおよびプラスチックよりなる群から選ばれた1種からなり、
前記1次元電気伝導性ナノ素材層に含まれた1次元電気伝導性ナノ素材は単一壁炭素ナノチューブで形成され、
前記2次元ナノ素材層に含まれた2次元ナノ素材は酸化グラフェンで形成され、2次元ナノ素材により、前記2次元ナノ素材層が形成される前に比べ電気伝導性が向上した、プラズマディスプレイパネル(PDP)、液晶ディスプレイ(LCD)素子、発光ダイオード素子(LED)、有機電子発光素子(OLEL)、タッチパネルまたは太陽電池の何れかに用いられるための1次元電気伝導性ナノ素材基盤電気伝導性フィルム。 - 基板と、前記基板の上面に形成された1次元電気伝導性ナノ素材層と、前記1次元電気伝導性ナノ素材層の上面に形成された2次元ナノ素材層とを含んで電気伝導性フィルムが形成され、
前記基板は、ガラス、水晶、ガラスウエハー、シリコンウエハーおよびプラスチックよりなる群から選ばれた1種からなり、
前記1次元電気伝導性ナノ素材層に含まれた1次元電気伝導性ナノ素材は単一壁炭素ナノチューブで形成され、
前記2次元ナノ素材層に含まれた2次元ナノ素材は酸化グラフェンで形成され、2次元ナノ素材により、前記2次元ナノ素材層が形成される前に比べ電気伝導性が向上した、プラズマディスプレイパネル(PDP)、液晶ディスプレイ(LCD)素子、発光ダイオード素子(LED)、有機電子発光素子(OLEL)、タッチパネルまたは太陽電池の何れかに用いられるための1次元電気伝導性ナノ素材基盤電気伝導性フィルム。 - 1次元電気伝導性ナノ素材基盤電気伝導性フィルムの製造方法であって、
前記1次元電気伝導性ナノ素材基盤電気伝導性フィルムにおいて、
基板と、前記基板の上面に形成された1次元電気伝導性ナノ素材層と、前記1次元電気伝導性ナノ素材層の上面に形成された2次元ナノ素材層とを含んで電気伝導性フィルムが形成され、
前記1次元電気伝導性ナノ素材層に含まれた1次元電気伝導性ナノ素材は単一壁炭素ナノチューブで形成され、
前記2次元ナノ素材層に含まれた2次元ナノ素材は酸化グラフェンで形成され、2次元ナノ素材により、前記2次元ナノ素材層が形成される前に比べ電気伝導性が向上しており、
前記1次元電気伝導性ナノ素材層は、1次元電気伝導性ナノ素材を溶媒に分散させた1次元電気伝導性ナノ素材溶液を前記基板の上面に塗布して形成される、
1次元電気伝導性ナノ素材基盤電気伝導性フィルムの製造方法。 - 前記基板は、ガラス、水晶、ガラスウエハー、シリコンウエハーおよびプラスチックよりなる群から選ばれた1種からなることを特徴とする、請求項4に記載の2次元ナノ素材により電気伝導性が向上した1次元電気伝導性ナノ素材基盤電気伝導性フィルムの製造方法。
- 前記塗布は、スプレー(spray)、浸漬(dipping)、スピンコート(spin coating)、スクリーン印刷(screen printing)、インクジェット印刷(inkjet printing)、パッドプリント、ナイフコート、キスコートおよびグラビアコートの中から選ばれたいずれか一つの方法を用いることを特徴とする、請求項4または5に記載の2次元ナノ素材により電気伝導性が向上した1次元電気伝導性ナノ素材基盤電気伝導性フィルムの製造方法。
- 前記2次元ナノ素材層は、純粋黒鉛を酸処理して製造された酸化黒鉛を剥離することにより形成された酸化グラフェンを、前記1次元電気伝導性ナノ素材層の上面に塗布することにより形成されることを特徴とする、請求項4〜6のいずれかに記載の2次元ナノ素材により電気伝導性が向上した1次元電気伝導性ナノ素材基盤電気伝導性フィルムの製造方法。
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