[go: up one dir, main page]

DE69737702D1 - Verfahren zur Herstellung von Halbleiterscheiben - Google Patents

Verfahren zur Herstellung von Halbleiterscheiben

Info

Publication number
DE69737702D1
DE69737702D1 DE69737702T DE69737702T DE69737702D1 DE 69737702 D1 DE69737702 D1 DE 69737702D1 DE 69737702 T DE69737702 T DE 69737702T DE 69737702 T DE69737702 T DE 69737702T DE 69737702 D1 DE69737702 D1 DE 69737702D1
Authority
DE
Germany
Prior art keywords
production
semiconductor wafers
wafers
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69737702T
Other languages
English (en)
Other versions
DE69737702T2 (de
Inventor
Tadahiro Kato
Hisashi Masumura
Sadayuki Okuni
Hideo Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of DE69737702D1 publication Critical patent/DE69737702D1/de
Application granted granted Critical
Publication of DE69737702T2 publication Critical patent/DE69737702T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Weting (AREA)
DE69737702T 1996-03-25 1997-03-25 Verfahren zur Herstellung von Halbleiterscheiben Expired - Fee Related DE69737702T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP09487896A JP3620554B2 (ja) 1996-03-25 1996-03-25 半導体ウェーハ製造方法
JP9487896 1996-03-25

Publications (2)

Publication Number Publication Date
DE69737702D1 true DE69737702D1 (de) 2007-06-14
DE69737702T2 DE69737702T2 (de) 2007-12-13

Family

ID=14122319

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69737702T Expired - Fee Related DE69737702T2 (de) 1996-03-25 1997-03-25 Verfahren zur Herstellung von Halbleiterscheiben
DE69723338T Expired - Fee Related DE69723338T2 (de) 1996-03-25 1997-03-25 Verfahren zur Herstellung von Halbleiterscheiben

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69723338T Expired - Fee Related DE69723338T2 (de) 1996-03-25 1997-03-25 Verfahren zur Herstellung von Halbleiterscheiben

Country Status (6)

Country Link
US (1) US5942445A (de)
EP (2) EP0798405B1 (de)
JP (1) JP3620554B2 (de)
DE (2) DE69737702T2 (de)
MY (1) MY116101A (de)
TW (1) TW399254B (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111482849A (zh) * 2019-01-25 2020-08-04 东莞新科技术研究开发有限公司 一种减少晶圆厚度的方法
CN111644906A (zh) * 2020-06-02 2020-09-11 大连理工大学 一种高精度超薄光学零件增厚-光胶-对称减薄加工方法

Families Citing this family (126)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6030887A (en) * 1998-02-26 2000-02-29 Memc Electronic Materials, Inc. Flattening process for epitaxial semiconductor wafers
JPH11154655A (ja) * 1997-11-21 1999-06-08 Komatsu Electron Metals Co Ltd 半導体ウェハの製造方法
JPH11302878A (ja) * 1998-04-21 1999-11-02 Speedfam-Ipec Co Ltd ウエハ平坦化方法，ウエハ平坦化システム及びウエハ
DE19823904A1 (de) * 1998-05-28 1999-12-02 Wacker Siltronic Halbleitermat Hochebene Halbleiterscheibe aus Silicium und Verfahren zur Herstellung von Halbleiterscheiben
JP3328193B2 (ja) * 1998-07-08 2002-09-24 信越半導体株式会社 半導体ウエーハの製造方法
DE19833257C1 (de) * 1998-07-23 1999-09-30 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
JP2000077372A (ja) * 1998-08-31 2000-03-14 Sumitomo Metal Ind Ltd 気相成長用半導体ウェーハの製造方法
DE19841492A1 (de) 1998-09-10 2000-03-23 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zum Abtrennen einer Vielzahl von Scheiben von einem sprödharten Werkstück
DE19841473A1 (de) * 1998-09-10 2000-03-23 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer hochebenen Halbleiterscheibe
JP2000114216A (ja) * 1998-10-01 2000-04-21 Sumitomo Metal Ind Ltd 半導体ウェーハの製造方法
JP3664593B2 (ja) * 1998-11-06 2005-06-29 信越半導体株式会社 半導体ウエーハおよびその製造方法
JP4212707B2 (ja) * 1998-11-26 2009-01-21 スピードファム株式会社 ウエハ平坦化システム及びウエハ平坦化方法
US6214704B1 (en) 1998-12-16 2001-04-10 Memc Electronic Materials, Inc. Method of processing semiconductor wafers to build in back surface damage
US6057245A (en) * 1999-01-19 2000-05-02 Vlsi Technology, Inc. Gas phase planarization process for semiconductor wafers
DE19905737C2 (de) * 1999-02-11 2000-12-14 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe mit verbesserter Ebenheit
US6112738A (en) * 1999-04-02 2000-09-05 Memc Electronics Materials, Inc. Method of slicing silicon wafers for laser marking
US6294469B1 (en) * 1999-05-21 2001-09-25 Plasmasil, Llc Silicon wafering process flow
WO2000072366A1 (en) * 1999-05-21 2000-11-30 Plasmasil, L.L.C. Method for improving thickness uniformity of semiconductor wafers
JP2001007064A (ja) * 1999-06-17 2001-01-12 Sumitomo Metal Ind Ltd 半導体ウエーハの研削方法
KR100318668B1 (ko) * 1999-07-03 2001-12-28 이한주 반도체 소자의 제조를 위한 화학적 기계적 연마장치
US6338805B1 (en) 1999-07-14 2002-01-15 Memc Electronic Materials, Inc. Process for fabricating semiconductor wafers with external gettering
US6200908B1 (en) 1999-08-04 2001-03-13 Memc Electronic Materials, Inc. Process for reducing waviness in semiconductor wafers
DE19956250C1 (de) * 1999-11-23 2001-05-17 Wacker Siltronic Halbleitermat Kostengünstiges Verfahren zur Herstellung einer Vielzahl von Halbleiterscheiben
DE19958077A1 (de) * 1999-12-02 2001-06-13 Wacker Siltronic Halbleitermat Verfahren zur beidseitigen Politur von Halbleiterscheiben
JP3491589B2 (ja) * 1999-12-22 2004-01-26 三菱住友シリコン株式会社 高平坦度半導体ウェーハの製造方法及び高平坦度半導体ウェーハ
JP2001244240A (ja) 2000-02-25 2001-09-07 Speedfam Co Ltd 半導体ウエハの製造方法
US20020004358A1 (en) * 2000-03-17 2002-01-10 Krishna Vepa Cluster tool systems and methods to eliminate wafer waviness during grinding
JP4846915B2 (ja) * 2000-03-29 2011-12-28 信越半導体株式会社 貼り合わせウェーハの製造方法
DE10036690A1 (de) * 2000-07-27 2002-01-31 Wacker Siltronic Halbleitermat Doppelseiten-Polierverfahren
KR100467009B1 (ko) * 2000-08-04 2005-01-24 샤프 가부시키가이샤 반도체 웨이퍼 표면의 오염을 방지할 수 있는 반도체웨이퍼의 박층화 방법 및 반도체 웨이퍼의 이면 연삭장치
US6709981B2 (en) 2000-08-16 2004-03-23 Memc Electronic Materials, Inc. Method and apparatus for processing a semiconductor wafer using novel final polishing method
DE10064081C2 (de) * 2000-12-21 2002-06-06 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
US6672943B2 (en) 2001-01-26 2004-01-06 Wafer Solutions, Inc. Eccentric abrasive wheel for wafer processing
US7510664B2 (en) 2001-01-30 2009-03-31 Rapt Industries, Inc. Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces
US7591957B2 (en) * 2001-01-30 2009-09-22 Rapt Industries, Inc. Method for atmospheric pressure reactive atom plasma processing for surface modification
US6632012B2 (en) 2001-03-30 2003-10-14 Wafer Solutions, Inc. Mixing manifold for multiple inlet chemistry fluids
DE10142400B4 (de) 2001-08-30 2009-09-03 Siltronic Ag Halbleiterscheibe mit verbesserter lokaler Ebenheit und Verfahren zu deren Herstellung
DE10143741A1 (de) * 2001-09-06 2003-03-27 Wacker Siltronic Halbleitermat Beschichtete Siliciumscheibe und Verfahren zu ihrer Herstellung
US20030092246A1 (en) * 2001-10-11 2003-05-15 Wanat Stanley F. Assembly system for stationing semiconductor wafer suitable for processing and process for manufacturing semiconductor wafer
US6660177B2 (en) * 2001-11-07 2003-12-09 Rapt Industries Inc. Apparatus and method for reactive atom plasma processing for material deposition
DE10159832A1 (de) * 2001-12-06 2003-06-26 Wacker Siltronic Halbleitermat Halbleiterscheibe aus Silicium und Verfahren zu deren Herstellung
US6743722B2 (en) 2002-01-29 2004-06-01 Strasbaugh Method of spin etching wafers with an alkali solution
JP4192482B2 (ja) * 2002-03-22 2008-12-10 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法
WO2004001849A2 (en) 2002-04-30 2003-12-31 Hrl Laboratories, Llc Quartz-based nanoresonators and method of fabricating same
US6576501B1 (en) * 2002-05-31 2003-06-10 Seh America, Inc. Double side polished wafers having external gettering sites, and method of producing same
US6896598B2 (en) * 2002-10-08 2005-05-24 Daisho Seiki Corporation Vertical type of double disc surface grinding machine
US20040157461A1 (en) * 2003-02-10 2004-08-12 Seh America, Inc. Method for fabricating a wafer including dry etching the edge of the wafer
US7371992B2 (en) 2003-03-07 2008-05-13 Rapt Industries, Inc. Method for non-contact cleaning of a surface
US8766745B1 (en) 2007-07-25 2014-07-01 Hrl Laboratories, Llc Quartz-based disk resonator gyro with ultra-thin conductive outer electrodes and method of making same
US7994877B1 (en) 2008-11-10 2011-08-09 Hrl Laboratories, Llc MEMS-based quartz hybrid filters and a method of making the same
US7304263B2 (en) * 2003-08-14 2007-12-04 Rapt Industries, Inc. Systems and methods utilizing an aperture with a reactive atom plasma torch
US7910218B2 (en) 2003-10-22 2011-03-22 Applied Materials, Inc. Cleaning and refurbishing chamber components having metal coatings
JP2005166925A (ja) * 2003-12-02 2005-06-23 Tokyo Seimitsu Co Ltd ウェーハ加工方法およびウェーハ加工装置
DE102004004556B4 (de) * 2004-01-29 2008-12-24 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
DE102004005702A1 (de) * 2004-02-05 2005-09-01 Siltronic Ag Halbleiterscheibe, Vorrichtung und Verfahren zur Herstellung der Halbleiterscheibe
JP4854936B2 (ja) * 2004-06-15 2012-01-18 信越半導体株式会社 シリコンウエーハの製造方法及びシリコンウエーハ
TWI250574B (en) * 2004-07-02 2006-03-01 Cleavage Entpr Co Ltd Polishing method for sapphire wafer
JP2006100799A (ja) 2004-09-06 2006-04-13 Sumco Corp シリコンウェーハの製造方法
JP4748968B2 (ja) * 2004-10-27 2011-08-17 信越半導体株式会社 半導体ウエーハの製造方法
US7670436B2 (en) 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
US7402520B2 (en) * 2004-11-26 2008-07-22 Applied Materials, Inc. Edge removal of silicon-on-insulator transfer wafer
US7659206B2 (en) * 2005-01-18 2010-02-09 Applied Materials, Inc. Removal of silicon oxycarbide from substrates
US7208325B2 (en) * 2005-01-18 2007-04-24 Applied Materials, Inc. Refreshing wafers having low-k dielectric materials
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US7185695B1 (en) * 2005-09-01 2007-03-06 United Technologies Corporation Investment casting pattern manufacture
US7762114B2 (en) 2005-09-09 2010-07-27 Applied Materials, Inc. Flow-formed chamber component having a textured surface
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US20070105483A1 (en) * 2005-11-04 2007-05-10 Honeywell International Inc. Methods and apparatus for discrete mirror processing
US8647484B2 (en) 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
US7930058B2 (en) * 2006-01-30 2011-04-19 Memc Electronic Materials, Inc. Nanotopography control and optimization using feedback from warp data
JP2007242787A (ja) * 2006-03-07 2007-09-20 Disco Abrasive Syst Ltd ウエーハの分割方法
US20070283884A1 (en) * 2006-05-30 2007-12-13 Applied Materials, Inc. Ring assembly for substrate processing chamber
US7555824B2 (en) 2006-08-09 2009-07-07 Hrl Laboratories, Llc Method for large scale integration of quartz-based devices
JP2008166805A (ja) * 2006-12-29 2008-07-17 Siltron Inc 高平坦度シリコンウェハーの製造方法
US7981262B2 (en) 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
US8083963B2 (en) * 2007-02-08 2011-12-27 Applied Materials, Inc. Removal of process residues on the backside of a substrate
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US20100020311A1 (en) * 2007-06-14 2010-01-28 Hrl Laboratories, Llc Integrated quartz biological sensor and method
US7884930B2 (en) * 2007-06-14 2011-02-08 Hrl Laboratories, Llc Integrated quartz biological sensor and method
US10266398B1 (en) 2007-07-25 2019-04-23 Hrl Laboratories, Llc ALD metal coatings for high Q MEMS structures
US8151640B1 (en) 2008-02-05 2012-04-10 Hrl Laboratories, Llc MEMS on-chip inertial navigation system with error correction
US7802356B1 (en) 2008-02-21 2010-09-28 Hrl Laboratories, Llc Method of fabricating an ultra thin quartz resonator component
DE102009038941B4 (de) 2009-08-26 2013-03-21 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
US8176607B1 (en) 2009-10-08 2012-05-15 Hrl Laboratories, Llc Method of fabricating quartz resonators
DE102009051008B4 (de) 2009-10-28 2013-05-23 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
DE102010005904B4 (de) * 2010-01-27 2012-11-22 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
FR2957189B1 (fr) * 2010-03-02 2012-04-27 Soitec Silicon On Insulator Procede de realisation d'une structure multicouche avec detourage post meulage.
DE102010014874A1 (de) * 2010-04-14 2011-10-20 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
US8912711B1 (en) 2010-06-22 2014-12-16 Hrl Laboratories, Llc Thermal stress resistant resonator, and a method for fabricating same
JP5693905B2 (ja) * 2010-10-06 2015-04-01 株式会社エム・エー・ティ 表面加工装置
DE102011082777A1 (de) * 2011-09-15 2012-02-09 Siltronic Ag Verfahren zum beidseitigen Polieren einer Halbleiterscheibe
WO2013049578A2 (en) 2011-09-30 2013-04-04 Saint-Gobain Ceramics & Plastics, Inc. Group iii-v substrate material with particular crystallographic features and methods of making
WO2013049775A2 (en) 2011-09-30 2013-04-04 Saint-Gobain Ceramics & Plastics, Inc. Scintillation detection device with pressure sensitive adhesive
CN102730945B (zh) * 2012-07-18 2014-08-06 哈尔滨工业大学 大面积接触式等离子体放电加工熔石英加工装置
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) * 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
TWI529964B (zh) 2012-12-31 2016-04-11 聖戈班晶體探測器公司 具有薄緩衝層的iii-v族基材及其製備方法
CN103117218A (zh) * 2013-01-14 2013-05-22 陆伟 一种晶圆背面减薄方法
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
JP2014167996A (ja) * 2013-02-28 2014-09-11 Ebara Corp 研磨装置および研磨方法
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
US9250074B1 (en) 2013-04-12 2016-02-02 Hrl Laboratories, Llc Resonator assembly comprising a silicon resonator and a quartz resonator
JP5967040B2 (ja) 2013-09-11 2016-08-10 信越半導体株式会社 鏡面研磨ウェーハの製造方法
US9599470B1 (en) 2013-09-11 2017-03-21 Hrl Laboratories, Llc Dielectric high Q MEMS shell gyroscope structure
US9977097B1 (en) 2014-02-21 2018-05-22 Hrl Laboratories, Llc Micro-scale piezoelectric resonating magnetometer
US9991863B1 (en) 2014-04-08 2018-06-05 Hrl Laboratories, Llc Rounded and curved integrated tethers for quartz resonators
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
US10308505B1 (en) 2014-08-11 2019-06-04 Hrl Laboratories, Llc Method and apparatus for the monolithic encapsulation of a micro-scale inertial navigation sensor suite
US10031191B1 (en) 2015-01-16 2018-07-24 Hrl Laboratories, Llc Piezoelectric magnetometer capable of sensing a magnetic field in multiple vectors
KR101759875B1 (ko) * 2015-06-24 2017-07-20 주식회사 엘지실트론 웨이퍼 연마장치의 스캔장치 및 스캔시스템
US10110198B1 (en) 2015-12-17 2018-10-23 Hrl Laboratories, Llc Integrated quartz MEMS tuning fork resonator/oscillator
US10175307B1 (en) 2016-01-15 2019-01-08 Hrl Laboratories, Llc FM demodulation system for quartz MEMS magnetometer
CN108231568A (zh) * 2016-12-14 2018-06-29 有研半导体材料有限公司 一种用于加工硅环的装置及加工方法
US12198935B2 (en) * 2017-03-24 2025-01-14 Axus Technology, Llc Atmospheric plasma in wafer processing system optimization
JP6920849B2 (ja) * 2017-03-27 2021-08-18 株式会社荏原製作所 基板処理方法および装置
CN108081031A (zh) * 2017-11-24 2018-05-29 西安工业大学 一种数控研磨修抛辅助的大气等离子体加工装置
CN108081070B (zh) * 2017-11-24 2019-10-25 西安工业大学 一种数控小工具抛光辅助大气等离子体加工方法
JP6525046B1 (ja) * 2017-12-19 2019-06-05 株式会社Sumco 半導体ウェーハの製造方法
CN110349867B (zh) * 2019-07-04 2020-11-27 浙江光特科技有限公司 一种应用表面粗糙型陶瓷盘的晶圆下蜡方法
CN110797259B (zh) * 2019-10-23 2022-03-29 中国电子科技集团公司第十三研究所 同质外延氮化镓衬底处理方法及氮化镓衬底
JP7028353B1 (ja) 2021-04-21 2022-03-02 信越半導体株式会社 シリコンウェーハの製造方法
CN113764544A (zh) * 2021-08-12 2021-12-07 江苏中科晶元信息材料有限公司 一种提升GaAs晶片强度的处理方法
CN117497431B (zh) * 2023-10-26 2024-08-16 威科电子模块（深圳）有限公司 一种厚膜电路板的微组装工艺
CN117840824B (zh) * 2024-03-08 2024-05-28 华侨大学 一种用于半导体晶圆表面的磨削方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55113332A (en) * 1979-02-23 1980-09-01 Hitachi Ltd Manufacture of wafer
US4390392A (en) * 1980-09-16 1983-06-28 Texas Instruments Incorporated Method for removal of minute physical damage to silicon wafers by employing laser annealing
US5376224A (en) * 1992-02-27 1994-12-27 Hughes Aircraft Company Method and apparatus for non-contact plasma polishing and smoothing of uniformly thinned substrates
JP2839801B2 (ja) * 1992-09-18 1998-12-16 三菱マテリアル株式会社 ウェーハの製造方法
JP2910507B2 (ja) * 1993-06-08 1999-06-23 信越半導体株式会社 半導体ウエーハの製造方法
JP3923107B2 (ja) * 1995-07-03 2007-05-30 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法およびその装置
JP3169120B2 (ja) * 1995-07-21 2001-05-21 信越半導体株式会社 半導体鏡面ウェーハの製造方法
KR100227924B1 (ko) * 1995-07-28 1999-11-01 가이데 히사오 반도체 웨이퍼 제조방법, 그 방법에 사용되는 연삭방법 및 이에 사용되는 장치
JPH09270400A (ja) * 1996-01-31 1997-10-14 Shin Etsu Handotai Co Ltd 半導体ウェーハの製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111482849A (zh) * 2019-01-25 2020-08-04 东莞新科技术研究开发有限公司 一种减少晶圆厚度的方法
CN111644906A (zh) * 2020-06-02 2020-09-11 大连理工大学 一种高精度超薄光学零件增厚-光胶-对称减薄加工方法
CN111644906B (zh) * 2020-06-02 2021-09-21 大连理工大学 一种高精度超薄光学零件增厚-光胶-对称减薄加工方法

Also Published As

Publication number Publication date
EP0798405B1 (de) 2003-07-09
EP0798405A2 (de) 1997-10-01
JP3620554B2 (ja) 2005-02-16
EP1217104A2 (de) 2002-06-26
DE69723338T2 (de) 2004-05-06
EP1217104B1 (de) 2007-05-02
EP0798405A3 (de) 1999-04-14
JPH09260314A (ja) 1997-10-03
US5942445A (en) 1999-08-24
EP1217104A3 (de) 2005-05-11
MY116101A (en) 2003-11-28
DE69737702T2 (de) 2007-12-13
TW399254B (en) 2000-07-21
DE69723338D1 (de) 2003-08-14

Similar Documents

Publication Publication Date Title
DE69723338D1 (de) Verfahren zur Herstellung von Halbleiterscheiben
DE69325325D1 (de) Verfahren zur Herstellung von Halbleiterscheiben
DE69431385D1 (de) Verfahren zur Herstellung von Silizium-Halbleiterplättchen
DE69434536D1 (de) Verfahren zur Herstellung von halbleitenden Wafern
DE59900390D1 (de) Verfahren zur Herstellung von Olefinen
DE69704964D1 (de) Verfahren zur Herstellung von Acryloxypropylsilane
DE59803595D1 (de) Verfahren zur herstellung von Silicium
DE69611658D1 (de) Verfahren zur Herstellung von Ethylenglykol
DE59904603D1 (de) Verfahren zur Herstellung von Schaltungsanordnungen
DE69617147D1 (de) Verfahren zur Herstellung dünner Halbleiterschichten
DE69600826D1 (de) Integriertes Verfahren zur Herstellung von Buten-1
DE69713022D1 (de) Verfahren zur Herstellung von Unterkleidung
DE69031447D1 (de) Verfahren zur Herstellung von MIS-Halbleiterbauelementen
DE69528117D1 (de) Verfahren zur Herstellung von Halbleiter-Anordnungen
DE69535412D1 (de) Verarbeitungssystem zur Herstellung von Halbleiterbauelementen
DE69604452D1 (de) Verfahren zur Herstellung polykristalliner Halbleiter
DE69623585D1 (de) Verfahren zur Herstellung polykristalliner Halbleiter
DE69508310D1 (de) Verfahren zur Herstellung von Mikrolinsen
DE69517629D1 (de) Verfahren zur selektiven Herstellung von Halbleitergebieten
DE69618022D1 (de) Verfahren zur Herstellung von Schleifmitteln
DE69409780D1 (de) Verfahren zur Herstellung opto-elektrischer Halbleiterbauelemente
DE69510596D1 (de) Verfahren zur Herstellung von Organooxysilane
DE69126153D1 (de) Verfahren zur Herstellung von verbundenen Halbleiterplättchen
DE59800920D1 (de) Verfahren zur Herstellung einer Halbleiterscheibe
DE69725675D1 (de) Verfahren zur Herstellung von Metallocenen

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee