CN1062425A - 基于自旋阀效应的磁致电阻传感器 - Google Patents
基于自旋阀效应的磁致电阻传感器 Download PDFInfo
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Abstract
一种磁致电阻(MR)传感器包括被一薄膜层非
磁性金属材料分隔开的一个第一与一个第二磁性材
料薄膜层。第一铁磁层是软磁性的。第一磁性材料
层的磁化方向在零作用场中是设置成基本上垂直于
第二磁性材料层的磁化的，并且第二磁性材料层的磁
化方向是固定的。产生通过MR传感器的一个电
流，就可感测到跨越该MR传感器的电压变化，这种
变化是由于作为一个被感测的磁场的函数由第一磁
性材料层中的磁化旋转产生的MR传感器的电阻变
化引起的。随第一与第二磁性层之间的磁化角的电
阻变化被定义为自旋阀(SV)效应。
Description
本发明一般涉及从磁性介质上读取信息信号的磁性传感器，具体涉及改进的磁致电阻的读传感器。
先有技术公开了一种称作磁致电阻（MR）传感器或头的磁性传感器，它表现为能从高线性密度的磁性表面读取数据。一个MR传感器通过一个由磁性材料制成的读元件的电阻变化检测磁场信号，该信号是作为该元件所感测到的磁通量的大小与方向的函数的。这些先有技术的MR传感器在各向异性的磁致电阻（AMR）效应基础上工作，其中电阻的一个分量随磁化与电流方向之间的夹角的余弦的平方变化。AMR效应的更详细的描述可在出版物“内存、存储器及相关应用中的薄膜磁致电阻器”，D.A.Thompson等，IEEE会报Mag.，MAG-11，1039页（1975）中见到。虽然AMR效应只产生极小百分比的电阻变化，但这些MR传感器还是以AMR效应为基础工作的。
最近，公布了获得增强的MR效应的技术报告，这些出版物之一“具有反铁磁性层间交换的分层磁结构中的增强的磁致电阻”，G.Binasch等，物理评论，B.V39，4828页（1989）以及德国专利DE3820475描述了一种分层磁性结构，它能够产生由磁化的逆平行排列引起的增强的MR效应。然而，获得这种电阻变化的要求的饱和磁场太高并且这种效应的线性度太差，所以并不适用于制造实用的MR传感器。
先有技术并未揭示在足够低的磁场上产生增强的MR效应并具有足够的线性反应的一个MR器件，使之能作为一种MR传感器使用。
从而本发明的主要目的是提供一种具有超过AMR的增强的MR效应的MR传感器，它在小的作用场中具有基本上线性的反应。
根据本发明，一个MR传感器包括一个第一与一个第二铁磁性材料的薄膜层，它们被一个非磁性金属材料薄膜层所分隔开。在零作用场中第一铁磁性材料层的磁化方向是设置为基本上垂直于第二铁磁性材料层的磁化方向的，并且第二铁磁性材料层的磁化方向是固定的。产生一个通过该MR传感的电流，就可检测到由于第一铁磁性材料层中的磁化方向的旋转而导致的MR传感器的电阻变化，将它作为所检测的磁场的一个函数。
本发明的上述的以及其它目的、特征及优点将从附图中所示的本发明的一个较佳实施例的下述较具体的描述中得到更清楚的了解。
图1示出两个相关的图，其中（a）为室温下的磁滞回路图，而（b）则为先有技术提出的一个分层磁性结构的一个特例的室温下的磁致电阻图。
图2为示出B-H回路以及沿类似于图1的一个分层磁性结构的易磁化轴的磁致电阻反应的曲线图，但其X轴标度是大为减小了的。
图3为根据本发明的磁致电阻传感器的一个特定实施例的分解透视示意图。
图4为根据本发明的磁致电阻传感器的另一个实施例的分解透视示意图。
图5为根据本发明的磁致电阻传感器的又一个实施例的剖视图。
图6为示出本发明的磁致电阻传感器的磁致电阻反应的曲线图。
图7为本发明的磁致电阻传感器的特定实施例的对于自由铁磁性层的厚度的室温下的磁致电阻的幅值曲线。
图8为本发明的一个特定实施例的作为隔离层的厚度的室温下的磁致电阻的辐值曲线。
图9为示出自旋阀磁致电阻、各向异性磁致电阻以及它们之和的一个实施例的曲线，其中它们之和的总辐值与变化率在零场附近都是大于其独立的分量的。
图10为示出自旋阀磁致电阻、各向异性磁致电阻以及它们之和的另一个实施例的曲线，其中它们之和的总辐值与变化率在零场附近都比图9中所示的降低了。
图11为示出两种配置的作为作用场的函数的磁致电阻的实验结果曲线，其中一种配置中的各向异性磁致电阻加强自阀磁致电阻而另一种配置则降低自旋阀磁致电阻。
先有技术的磁致电阻传感器是基于各向异性的磁致电阻（AMR）上的，其中该电阻的一个分量随磁化与电流方向间的夹角的余弦平方变化。
最近，发现了另一种机制，其中观察到两个不耦合的铁磁性层之间的电阻随该两层的磁化之间的夹角的余弦变化而与电流方向无关。这一机制对于选择的材料组合产生在辐值上大于AMR的磁致电阻，我们称之为“自旋阀”（SV）磁致电阻。
这一SV结构的一个特定实施例建立在包括下述结构的硅基片上：Si/150 
NiFe/25 Cu/150 
NiFe/100 
FeMn/20 
Ag。这一结构的磁滞回路示出在图1的曲线图（a）中，这一曲线图示出了对应于自由与偏转的NiFe层的两个回路，图1中的曲线图（b）示出当两个铁磁性层逆平行时电阻增加约2%。
图2示出一个类似结构沿易磁化轴的BH回路与MR特性，其X轴标度是大加扩张了的。这一结构建立在包括下述结构的一片硅基片上：Si/60 
NiFe/25 
Cu/30 
NiFe/70 FeMn/20 
Ag。第二NiFe层是交换附加偏磁到170Oe（奥斯特）并且在图中所示的场的范围内不换向。对于沿难磁化轴（未示出）作用的场，自旋阀反应相当弱，因而用途较差。沿易磁化轴，MR特性的基本形状揭示它能作为一个磁场传感器使用。然而，由于它的矫顽磁性、高垂直度、以及从原点的移位，这一结构的特性是高度非线性的。此外，第一铁磁性层中的变化是由磁畴壁运动导致的。这是已知会引起稳定性问题并且已知是与磁畴旋转相比运动得非常慢的，因此这将严重地限制数据率。由于这些原因，所提出的先有技术自旋阀结构不适用于作为一个磁场传感器。
根据本发明，我们说明使反应线性化，降低矫顽性、定心反应，并且令对一个作用磁场的反应变化由磁畴旋转形成的方法，从而产生一种基于自旋阀结构的磁场传感器，使之在对不大于先有技术的MR传感器所需的磁场作出反应时，能较先有技术的MR传感器表现远远超出的磁致电阻改变。
根据本发明的这种新颖的结构示出在图3中。该MR传感器包括一块适当的基板10，例如玻璃、陶瓷或半导体，在这上面涂覆一个软铁磁性材料的第一薄膜层12，一个非磁性金属材料的薄膜层14，以及一个铁磁性材料的第二薄膜层16，两个铁磁性材料层12、16在没有磁场作用下以它们的磁化大约成90度角定向。此外，第二层铁磁性材料16的磁化在位置上是固定的，如箭头20所示。第一层铁磁性材料12在没有磁场作用下的磁化是以箭头22示出的。层12中磁化的改变是对一个作用的磁场（诸如图3中的磁场h）作出反应以旋转形成的，如图3中虚线所示。
在图3所示的实施例中，第二层铁磁材料16较第一层铁磁性层12具有较高的矫顽性，所以层16的磁化位置得以固定。图4所示的特定实施例提出了两种固定第二层铁磁性材料16的磁化位置的不同方法。
在图4所示的实施例中，具有高阻力的一种反铁磁性材料18的薄膜层直接接触地涂覆在第二铁磁性材料16薄膜层上，使得通过交换耦合能产生一个偏转场，这是本领域所已知的。另一种方法，层18也可是一层具有足够高的垂直度、高矫顽性及高磁阻的铁磁性层。图4的结构可以是反向的，因而先涂覆层18，接着涂覆层16、14、与12。
图5示出了根据本发明的磁致电阻传感器的又一个实施例。在本发明的这一实施例中，在涂覆第一层铁磁性材料12之前，先在基板10上涂覆一个适当的垫层24，例如Ta、Ru或CrV。垫层24的目的是优化以后各层的纹理、粒度与表面几何形状。表面几何形状对于获得高MR效应的是有决定性作用的，因为它允许使用一个极薄的非磁性金属材料14的隔离层。此外，该垫层必须具有高电阻率以最小化分路效应。垫层也可用于上述反向结构。如果基板10具有足够高的电阻率，具有足够平整的表面，并且具有适当的晶体结构，则垫层24可以省略。
设置了产生纵向偏转的装置将层12保持在如图5中箭头所指的单磁畴状态。在所示的特定实施例中，产生纵向偏转的装置包括具有高矫顽性、高垂直度及高电阻率的铁磁性材料层26。硬磁性层26与铁磁性层12的端部区域接触，并且层26从它们的磁化方向面向图5中的箭头所指的方向。
另一种方法，也可以涂覆与层12的端部区域接触的反铁磁性层，并朝向图5中箭头所指的方向以产生所要求的纵向偏转。这些反铁磁性层必须具有与反铁磁性层18充分差异的屏蔽温度，层18是用于固定第二铁磁性层16的磁化方向的。
然后，在MR传感器上涂覆一个诸如Ta的高电阻率材料的封顶层28。设置了导电引线30与32以在MR传感器结构、电流源34与感测装置36之间形成一个电路通路。
图6示出了根据本发明的磁致电阻传感器的一个特定实施例的磁致电阻反应。这一结构由Si/Ta50 
/3X（NiFe70 
/Cu20 /NiFe50 
/FeMn70 
/）Ta50 
构成。注意，大约在0至15Oe的范围内磁致电阻反应是非常线性的，具有可以忽略的矫顽性并且变化是由磁畴旋转引起的。然而，由于两个铁磁性层12、16透过非磁性金属材料层14的轻微铁磁耦合而使这一特性并不以零场为中心点。可以采取多种措施来将反应定心在零场上如图5中虚线所示。在一个实际构图的结构中，两个铁磁性层之间的静磁交互作用有助于消除透过非磁性金属层的耦合效应从而使反应对准中心。另一种定心反应的方法是适当选择感测电流的辐值与方向。另一种定心反应的方法是将层12的易磁化轴设置为相对于层16的磁化稍大于90度。定心反应的又一种方法是通过少量改变层12与16之间的磁化的夹角。注意，这一反应是非常线性的，是定心在零场上的，并且在磁性记录应用中所遇到的范围内对信号是敏感的。可见，这些特征使它在磁性记录应用中成为一种优秀的磁场传感器。
这种分层磁性结构可以用任何适宜的技术完成，诸如使用阴极真空喷镀。图3的结构要通过朝向选择方向上的一个磁场来涂覆第一薄膜铁磁性层12来制造，以使该膜的易磁化轴朝向图3中所示的横越图面的方向。
铁磁性层12、16可以由任何适当的磁性材料构成，例如Co、Fe、Ni以及它们的合金诸如NiFe、NiCo与FeCo。对于三种选择的磁性材料Co、NiFe与Ni，磁致电阻的辐值随第一薄膜铁磁性层12的厚度的变化如图7所示。这三条曲线具有以在大约50 
与150 
之间的宽阔的极大值为特征在相似的形状，所以这便是第一铁磁性层12的最佳厚度范围。
非磁性隔离层14最好是具有高导电性的金属。贵金属如Au、Ag与Cu给出大的MR特性，Pt与Pd给出小的MR特性，而Cr与Ta则呈现非常小的MR特性。对于三种选择的材料Ag、Au与Cu，磁阻的辐值也随非磁性隔离层14的厚度变化，如图8所示。可以看出，较薄的层产生较高的磁致电阻;然而，传感器的工作是基于具有两个基本上不耦合的铁磋性层的。所以，如果隔离层14的厚度太小，便不可能换向铁磁性层12、16之一而不同时换向另一层。对于在室温附近阴极真空喷镀的膜，为达到这一目的的最小隔离距离大约为16A。当隔离层的厚度大约在80到100埃（ 
）范围内时，所产生的磁致电阻基本上与AMR所产生的相同。由于这些原因，隔离层14的厚度最好在大约16 
至大约40 
的范围内。
为了生产图4中的示的传感器结构，各层如上面所述的那样涂覆，然后再涂覆反铁磁性层18。反磁铁层18的厚度必须选择为屏蔽温度足够高于器件的工作温度（典型地大约为50℃）。对于Fe50Mn50，90 
以上的厚度是适宜的。然而，太大的厚度（150 
以上）将由于通过结构的这一部分的电流的支路而导致MR特性的降低。这一层所产生的交换场的正确方向可以以在涂覆过程中在要求的方向上作用一个磁场（垂直于第一铁磁性层12的易磁化轴的方向）来获得，或者在涂覆以后在一个垂直于第一铁磁性层12的易磁化轴作用的磁场中将该结构迅速加热到屏蔽温度以上并迅速冷却到室温来获得。在所有情况中，该传感器所要检测的场是沿第一铁磁性层12的难磁化轴的。以同样的方法可以生产一个反向的结构，其中首先涂覆层18，随着涂覆层16、14与12。
现已描述了一种线性的，以零场为中心的，具有高灵敏度的，并且能够产生比使用AMR原理的先有技术传感器所产生的高得多的磁致电阻的传感器。有可能经过适当的设计选择生产一种传感器，这具有等于上述SV磁致电阻与作为先有技术的MR传感器的基础的AMR反应之和的反应。
图9示出SV磁致电阻的曲线图，它随由两个铁磁性层12、16产生的磁化M1与M2之间的夹角的余弦变化，并且这一值是与电流I的方向无关的。同时示出的是一条AMR曲线，其中的一个电阻分量随磁化与电流I的方向之间的夹角的余弦的平方变化。磁化M2的位置是固定的，而磁化M1在零作用场中则是基本上垂直于M2朝向的。作用场有两个正交的分量Ha与Hb。Ha对应于要检测的励磁场，而Hb是一个静态偏磁场。图9中的曲线以25Oe的Hb值为基础，Ha的值标在图上。AMR的曲线是基于相对于图9上部的图中所示的电流I的方向的两个铁磁性层的朝向的。实际MR器件的最佳效应是将电流I的方向对准在M1与M2之间的夹角的分角线基本上成90°的方向上，来将SV与AMR这两个效应相加。总特性大于SV值并且斜率较高。
在选择相对于铁磁性层的磁化的感测电流的方向时必须小心。图10中的曲线示出SV与AMR效应的不适当组合也会降低磁致电阻的辐值。在这一情况中，磁化的朝向如图10上部的图中所示。在这一情况中，组合特性小于SV值并且斜率较低。图11示出实验数据，它们展示以特殊方式组合的SV与AMR效应，所得到的是最大与最小的总MR反应。
虽然已参照其一个较佳实施例对本发明进行了具体的展示与描述，精于此者应能理解可以在不脱离本发明的精神与范围下在其中作出形式上与细节上的各种其它变化。
Claims (17)
1、一种磁致电阻传感器，其特征在于：
被一薄膜层非磁性金属材料分隔开的一个第一与一个第二铁磁性材料薄膜层，在零作用磁场中，所述第一铁磁性材料层的磁化方向是基本上垂直于所述第二铁磁性材料层的磁化方向的；
用于产生通过所述磁致电阻传感器的一个电流的装置；以及
用于感测所述磁致电阻传感器的电阻率的变化的装置，这种变化是由于作为所感测的磁场的一个函数的所述铁磁材料层中磁化旋转上的差别引起的。
2、一种磁致电阻传感器，其特征在于：
被一薄膜层非磁性金属材料分隔开的一个第一与一个第二铁磁性材料薄膜层，在零作用磁场中，所述第一铁磁性材料层的磁化方向是基本上垂直于所述第二铁磁性材料层的磁化方向的;
用于固定所述第二铁磁性材料层的磁化方向的装置;
用于产生通过所述磁致电阻传感器的一个电流的装置;以及
用于感测所述磁致电阻传感器的电阻率的变化的装置，这种变化是由作为所感测的磁场的一个函数的所述第一铁磁性材料层的磁化的旋转引起的。
3、权利要求2的磁致电阻传感器，其特征在于所述用于固定所述第二铁磁性材料层的磁化方向的装置包括向所述第二铁磁性材料层提供一个基本上高于所述第一铁磁性材料层的矫顽力的矫顽力。
4、权利要求2的磁致电阻传感器，其特征在于所述用于固定所述第二铁磁性材料层的磁化方向的装置包括一个直接与所述第二铁磁性材料层接触的反铁磁性材料薄膜层。
5、权利要求2的磁致电阻传感器，其特征在于所述用于固定所述第二铁磁性材料层的磁化方向的装置包括一个直接与所述第二铁磁性材料层接触的硬铁磁性材料薄膜层。
6、权利要求1的磁致电阻传感器，其特征在于所述第一铁磁性材料层具有在大约50至大约150埃的范围内的厚度。
7、权利要求2的磁致电阻传感器，其特征在于所述第一铁磁性材料层具有在大约50至大约150埃范围内的厚度。
8、权利要求1的磁致电阻传感器，其特征在于所述非磁性材料层具有在大约16至大约40埃范围内的厚度。
9、权利要求2的磁致电阻传感器，其特征在于所述非磁性材料层具有在大约16至大约40埃范围内的厚度。
10、权利要求1的磁致电阻传感器，其特征在于所述铁磁性材料层的磁化方向是相对于所述电流方向建立的，使得各向异性磁致电阻可与所述磁致电阻传感器的电阻的所述变化相加，所述变化是由于所述铁磁性材料层中的磁化旋转引起的。
11、权利要求2的磁致电阻传感器，其特征在于所述铁磁性材料层的磁化方向是相对于所述电流方向建立的，使得各向异性磁致电阻可与所述磁致电阻传感器的电阻的所述变化相加，所述变化是由于所述第一铁磁性材料层中的磁化旋转引起的。
12、权利要求1的磁致电阻传感器，其特征在于还包括用于产生一个足以将所述第一铁磁性材料层保持在一个单磁畴状态的纵向偏转的装置。
13、权利要求12的磁致电阻传感器，其特征在于所述用于产生一个纵向偏转的装置包括一个只与所述第一铁磁性材料层的端部区域直接接触的反铁磁性材料层。
14、权利要求12的磁致电阻传感器，其特征在于所述用于产生一个纵向偏转的装置包括一个只与所述第一铁磁性材料层的端部区域直接接触的硬铁磁材料层。
15、权利要求2的磁致电阻传感器，其特征在于还包括用于产生一个足以将所述第一铁磁性材料层保持在一个单磁畴状态的纵向偏转的装置。
16、权利要求15的磁致电阻传感器，其特征在于所述用于产生一个纵向偏转的装置包括一个只与所述第一铁磁性材料层的端部区域直接接触的反铁磁性材料层。
17、权利要求15的磁致电阻传感器，其特征在于所述用于产生一个纵向偏转的装置包括一个只与所述第一铁磁性材料层的端部区域直接接触的硬铁磁性材料层。
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| US07/625,343 US5206590A (en) | 1990-12-11 | 1990-12-11 | Magnetoresistive sensor based on the spin valve effect |
| US625,343/90 | 1990-12-11 |
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| JP (1) | JPH0821166B2 (zh) |
| KR (1) | KR960015920B1 (zh) |
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| US4447839A (en) * | 1980-10-28 | 1984-05-08 | Compagnie Internationale Pour L'informatique Cii-Honeywell Bull (Societe Anonyme) | Magnetoresistant transducer |
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| DE3820475C1 (zh) * | 1988-06-16 | 1989-12-21 | Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De | |
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- 1991-11-11 KR KR91019942A patent/KR960015920B1/ko not_active IP Right Cessation
- 1991-11-11 MY MYPI91002080A patent/MY107672A/en unknown
- 1991-11-11 CN CN91110607A patent/CN1022142C/zh not_active Expired - Lifetime
- 1991-11-28 JP JP3337905A patent/JPH0821166B2/ja not_active Expired - Lifetime
- 1991-12-09 EP EP91311417A patent/EP0490608B1/en not_active Expired - Lifetime
- 1991-12-09 SG SG1996000086A patent/SG42305A1/en unknown
- 1991-12-09 DE DE69132027T patent/DE69132027T2/de not_active Expired - Lifetime
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| CN1058801C (zh) * | 1992-11-17 | 2000-11-22 | 国际商业机器公司 | 电流偏置磁性自旋阀式传感元件 |
| CN1057627C (zh) * | 1993-02-08 | 2000-10-18 | 国际商业机器公司 | 带有非磁性背层的磁致电阻自旋阀传感器 |
| CN100336934C (zh) * | 1996-11-20 | 2007-09-12 | 株式会社东芝 | 抗铁磁材料膜和包括其的磁阻效应器件 |
| CN1095154C (zh) * | 1997-09-19 | 2002-11-27 | 富士通株式会社 | 自旋阀式磁阻磁头及其制造方法 |
| CN1110795C (zh) * | 1998-03-19 | 2003-06-04 | 富士通株式会社 | 巨磁阻磁头、其制造方法及使用该磁头的磁盘驱动器 |
| CN100340697C (zh) * | 2004-10-28 | 2007-10-03 | 复旦大学 | 一种可提高巨磁电阻效应的自旋阀制备方法 |
| CN100368820C (zh) * | 2004-11-10 | 2008-02-13 | 中国科学院物理研究所 | 自旋阀型数字式磁场传感器及其制作方法 |
| CN100389326C (zh) * | 2004-12-31 | 2008-05-21 | 中山大学 | 利用免疫磁珠的生物检测装置及其检测方法 |
| CN102809731A (zh) * | 2011-06-01 | 2012-12-05 | 宇能电科技股份有限公司 | 自旋阀磁阻传感器 |
| CN102809731B (zh) * | 2011-06-01 | 2015-01-21 | 宇能电科技股份有限公司 | 自旋阀磁阻传感器 |
| CN104751857A (zh) * | 2013-10-23 | 2015-07-01 | 西部数据（弗里蒙特）公司 | 具有反铁磁层的磁性读取磁头 |
| CN104751857B (zh) * | 2013-10-23 | 2019-02-22 | 西部数据（弗里蒙特）公司 | 具有反铁磁层的磁性读取磁头 |
| CN106597102A (zh) * | 2016-12-12 | 2017-04-26 | 四川大学 | 磁性薄膜结构以及含有其的磁敏传感器器件、应用方法 |
| CN106597102B (zh) * | 2016-12-12 | 2020-05-05 | 四川大学 | 磁性薄膜结构以及含有其的磁敏传感器器件、应用方法 |
| CN107576718A (zh) * | 2017-10-26 | 2018-01-12 | 北京航空航天大学 | 一种固体内杂质浓度的测量系统及测量方法 |
| CN107807142A (zh) * | 2017-10-26 | 2018-03-16 | 北京航空航天大学 | 一种固体所含杂质浓度的测量系统及测量方法 |
| CN113853661A (zh) * | 2019-06-17 | 2021-12-28 | 国际商业机器公司 | 用于磁芯的基于颗粒的各向异性复合材料 |
| CN111740010A (zh) * | 2020-06-18 | 2020-10-02 | 电子科技大学 | 一种基于多层磁性复合结构的各向异性磁电阻 |
| CN118519081A (zh) * | 2024-05-30 | 2024-08-20 | 珠海多创科技有限公司 | 一种磁阻元件、磁开关传感器及电子设备 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04358310A (ja) | 1992-12-11 |
| MY107672A (en) | 1996-05-30 |
| SG42305A1 (en) | 1997-08-15 |
| DE69132027D1 (de) | 2000-04-13 |
| CN1022142C (zh) | 1993-09-15 |
| EP0490608B1 (en) | 2000-03-08 |
| EP0490608A2 (en) | 1992-06-17 |
| DE69132027T2 (de) | 2000-09-14 |
| CA2054580A1 (en) | 1992-06-12 |
| EP0490608A3 (en) | 1993-05-26 |
| US5206590A (en) | 1993-04-27 |
| JPH0821166B2 (ja) | 1996-03-04 |
| KR960015920B1 (en) | 1996-11-23 |
| KR920013258A (ko) | 1992-07-28 |
| CA2054580C (en) | 1994-05-03 |
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