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KR920013258A - 자기성 전기저항 센서 - Google Patents

자기성 전기저항 센서 Download PDF

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Publication number
KR920013258A
KR920013258A KR1019910019942A KR910019942A KR920013258A KR 920013258 A KR920013258 A KR 920013258A KR 1019910019942 A KR1019910019942 A KR 1019910019942A KR 910019942 A KR910019942 A KR 910019942A KR 920013258 A KR920013258 A KR 920013258A
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KR
South Korea
Prior art keywords
layer
ferromagnetic material
magnetic
magnetic resistance
resistance sensor
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KR1019910019942A
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English (en)
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KR960015920B1 (en
Inventor
다이니 버나드
앨빈 거네이 브루스
유진 램버트 스티븐
마우리 다니엘레
스티븐 팝워쓰 파킨 스튜어트
사이먼 스페리오스 버질
리챠드 윌호이트 데니스
Original Assignee
죤 디. 크래인
인터내셔널 비니네스 머신즈 코포레이션
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Publication of KR920013258A publication Critical patent/KR920013258A/ko
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Publication of KR960015920B1 publication Critical patent/KR960015920B1/ko

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/096—Magnetoresistive devices anisotropic magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B2005/0002—Special dispositions or recording techniques
    • G11B2005/0005—Arrangements, methods or circuits
    • G11B2005/001—Controlling recording characteristics of record carriers or transducing characteristics of transducers by means not being part of their structure
    • G11B2005/0013—Controlling recording characteristics of record carriers or transducing characteristics of transducers by means not being part of their structure of transducers, e.g. linearisation, equalisation
    • G11B2005/0016—Controlling recording characteristics of record carriers or transducing characteristics of transducers by means not being part of their structure of transducers, e.g. linearisation, equalisation of magnetoresistive transducers
    • G11B2005/0018—Controlling recording characteristics of record carriers or transducing characteristics of transducers by means not being part of their structure of transducers, e.g. linearisation, equalisation of magnetoresistive transducers by current biasing control or regulation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
  • Magnetic Heads (AREA)

Abstract

내용 없음

Description

자기성 전기저항 센서
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명에 따른 자기성 전기저항 센서의 특수한 실시예의 확대된 투지 개략도, 제4도는 본 발명에 따른 자기성 전기저항 센서의 대안의 실시예의 확대된 투시 개략도, 제5도는 본 발명에 따른 자기성 전기저항 센서의 또 다른 실시예의 단면도.

Claims (17)

  1. 강자성 재료의 제1박막 층의 자화 방향이 제로가 인가된 필드에서 강자성 재료의 제2박막 층의 자화 방향에 실제로 수직하며, 비-자기 금속 재료의 박막 층에 의해 분리된 강자성 재료의 상기 제1 및 제2박막 층과, 자기성 전기저항 센서를 통해 전류 흐름을 발생시키는 수단 및, 감지되어진 자계의 함수로서 강자성 재료의 상기 층의 자화의 회전의 차이로 인해 상기 자기성 전기저항 센서의 저항도의 변화를 감지하는 수단을 포함하는 것을 특징으로 하는 자기성 전기저항 센서.
  2. 강자성 재료의 제1박막 층의 자화 방향이 제로가 인가된 필드에서 강자성 재료의 제2박막 층의 자화 방향에 실제로 수직하며, 비-자기 금속 재료의 박막 층에 의해 분리된 강자성 재료의 상기 제1 및 제2박막 층과, 강자성 재료의 상기 제2층의 자화방향을 고정시키는 수단과, 상기 자기성 전기저항 센서를 통해 전류 흐름을 발생시키는 수단 및, 감지되어진 자계의 함수로서 강자성 재료의 상기 제1층의 자화의 회전으로 인해 상기 자기성 전기저항 센서의 저항도의 변화를 감지하는 수단을 포함하는 것을 특징으로 하는 자기성 전기저항 센서.
  3. 제2항에 있어서, 강자성 재료의 상기 제2층의 자화 방향을 고정시키는 상기 수단이 강자성 재료의 상기 제1층의 보자도 보다 실제로 더 높은 보자도를 가진 강자성 재료의 상기 제2층을 제공하는 수단을 포함하는 것을 특징으로 하는 자기성 전기저항 센서.
  4. 제2항에 있어서, 강자성 재료의 상기 제2층의 자화 방향을 고정시키는 상기 수단이 강자성 재료의 상기 제2층과 직접 접촉하는 반강자성 재료의 박막 층을 포함하는 것을 특징으로 하는 자기성 전기저항 센서.
  5. 제2항에 있어서, 강자성 재료의 상기 제2층의 자화 방향을 고정시키는 수단이 강자성 재료의 상기 제2층과 직접 접촉하는자화 곤란 강자성 재료의 박막 층을 포함하는 것을 특징으로 하는 자기성 전기저항 센서.
  6. 제1항에 있어서, 강자성 재료의 상기 제1층이 약 50내지 약 150옹스트롬 범위내의 두께를 갖는 것을 특징으로 하는 자기성 전기저항 센서.
  7. 제2항에 있어서, 강자성 재료의 상기 제1층이 약 50내지 약 150옹스트롬 범위내의 두께를 갖는 것을 특징으로 하는 자기성 전기저항 센서.
  8. 제1항에 있어서, 비-자기 재료의 상기 층이 약 16내지 약 40옹스트롬 범위내의 두께를 갖는 것을 특징으로 하는 자기성 전기저항 센서.
  9. 제2항에 있어서, 비-자기 재료의 상기 층이 약 16내지 약 40옹스트롬 범위내의 두께를 갖는 것을 특징으로 하는 자기성 전기저항 센서.
  10. 제1항에 있어서, 강자성 재료의 상기 제1층의 자화방향은, 비등방성 자기성 전기 저항이 강자성 재료의 상기 층의 자화의 회전으로 인해 상기 자기성 전기저항 센서의 상기 저항의 변화에 부가되도록, 상기 전류 흐름의 방향에 대해 설정되는 것을 특징으로 하는 자기성 전기저항 센서.
  11. 제2항에 있어서, 강자성 재료의 상기 제1층의 자화방향은, 비등방성 자기성 전기 저항이 강자성 재료의 상기 층의 자화의 회전으로 인해 상기 자기성 전기저항 센서의 상기 저항의 변화에 부가되도록, 상기 전류 흐름의 방향에 대해 설정되는 것을 특징으로 하는 자기성 전기저항 센서.
  12. 제1항에 있어서, 강자성 재료의 상기 제1층을 단일 자기구역 상태로 유지하기 충분한 세로방향 바이어스를 발생시키는 수단을 또한 포함하는 것을 특징으로 하는 자기성 전기저항 센서.
  13. 제12항에 있어서, 세로방향 바이어스를 발생시키는 상기 수단이 강자성 재료의 상기 제1층의 단부 영역과 직접 접촉하는 반강자성 재료의 층을 포함하는 것을 특징으로 하는 자기성 전기저항 센서.
  14. 제12항에 있어서, 세로방향 바이어스를 발생시키는 상기 수단이 강자성 재료의 상기 제1층의 단부 영역에 대해서만 직접 접촉하는 자화 곤란 강자성 재료의 층을 포함하는 것을 특징으로 하는 자기성 전기저항 센서.
  15. 제2항에 있어서, 강자성 재료의 상기 제1층을 단일 자기구역 상태로 유지하기에 충분한 세로방향 바이어스를 발생시키는 수단을 또한 포함하는 것을 특징으로 하는 자기성 전기저항 센서.
  16. 제15항에 있어서, 세로방향 바이어스를 발생시키는 상기 수단이 강자성 재료의 상기 제1층의 단부 영역에 대해서만 직접 접촉하는 반강자성 재료의 층을 포함하는 것을 특징으로 하는 자기성 전기저항 센서.
  17. 제15항에 있어서, 세로방향 바이어스를 발생시키는 상기 수단이 강자성 재료의 상기 제1층의 단부 영역에 대해서만 직접 접촉하는 자화 곤란 강자성 재료의 층을 포함하는 것을 특징으로 하는 자기성 전기저항 센서.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR91019942A 1990-12-11 1991-11-11 Magnetoresistive sensor KR960015920B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/625,343 US5206590A (en) 1990-12-11 1990-12-11 Magnetoresistive sensor based on the spin valve effect
US625,343 1990-12-11

Publications (2)

Publication Number Publication Date
KR920013258A true KR920013258A (ko) 1992-07-28
KR960015920B1 KR960015920B1 (en) 1996-11-23

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR91019942A KR960015920B1 (en) 1990-12-11 1991-11-11 Magnetoresistive sensor

Country Status (9)

Country Link
US (1) US5206590A (ko)
EP (1) EP0490608B1 (ko)
JP (1) JPH0821166B2 (ko)
KR (1) KR960015920B1 (ko)
CN (1) CN1022142C (ko)
CA (1) CA2054580C (ko)
DE (1) DE69132027T2 (ko)
MY (1) MY107672A (ko)
SG (1) SG42305A1 (ko)

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SG42305A1 (en) 1997-08-15
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US5206590A (en) 1993-04-27
DE69132027T2 (de) 2000-09-14
EP0490608A2 (en) 1992-06-17
CN1062425A (zh) 1992-07-01
KR960015920B1 (en) 1996-11-23
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CA2054580C (en) 1994-05-03

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