CN104751857A - 具有反铁磁层的磁性读取磁头 - Google Patents
具有反铁磁层的磁性读取磁头 Download PDFInfo
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Abstract
提供具有突出的AFM层和延长的钉扎层的隧穿磁阻(TMR)读取传感器以及制造该传感器的方法。TMR读取传感器具有AFM层，该AFM层从空气轴承表面凹陷，从而提供减小的屏蔽到屏蔽距离。
Description
相关申请案的交叉参考
本申请案主张2013年10月23日递交的第61/894,550号(代理人案号F6672.P)的美国临时申请案的权益，所述申请案以全文引用的方式并入本文中。
背景技术
在磁性存储装置(例如，硬盘驱动器(HDD))中，读取磁头和写入磁头用于磁性地从存储介质读取信息以及将信息写入到存储介质中。在HDD中，数据可以在可被称为数据磁道的一系列邻近的同心圆中被存储在一或多个磁盘上。HDD可以包含：旋转式致动器；悬架，其安装在旋转式致动器的臂上；以及滑块，其结合到悬架上以形成磁头万向节组合件(HGA)。在传统的HDD中，滑块承载写入磁头和读取磁头，并且在伺服控制系统的控制下在存储介质(例如，磁盘)的表面上径向滑动，伺服控制系统选择性地将磁头定位在磁盘的特定磁道上方。在此一个读取磁头(读取器)配置中，读取器在磁道的中心上方对齐以用于数据读回。
由于HDD存储能力已增加，因此数据磁道间隔已减小并且密度已增大。增大的磁记录密度需要较窄的磁道宽度以及读取磁头上的较窄的屏蔽到屏蔽(S-S)间距。当前的隧道磁阻(TMR)读取磁头可以包含于其他元件、耦合到反铁磁(AFM)层的被钉扎层之中。TMR读取磁头可以进一步包括通过势垒层与钉扎层分离的自由层。在当前的垂直磁记录(PMR)读取磁头中，存在极少空间(如果存在的话)，从而由于钉扎层下方的AFM钉扎材料的存在而进一步减小S-S间距。通过移除AFM层而使S-S间距变窄的尝试已经是不成功的，因为不含AFM的TMR读取磁头普遍的是双向磁性的。
附图说明
在附图的图式中借助于示例而非限制来说明本发明，其中：
图1说明常规的读取传感器；
图2是说明根据各种实施例执行的用于制造TMR读取传感器的示例过程的操作流程图；
图3A到图3D说明根据各种实施例的TMR读取传感器的各个制造阶段；
图4A和图4B说明根据一个实施例的示例TMR读取传感器；以及
图5A到图5C说明根据各种实施例的额外的示例TMR读取传感器。
具体实施方式
在下文的描述中，阐述了大量具体细节，例如具体层组合物和特性的示例，以便提供对本发明的各种实施例的透彻理解。然而，对于所属领域的技术人员而言显而易见的是，不必采用这些具体细节来实践本发明的各种实施例。在其它情况下，并未详细描述众所周知的组件或方法以避免不必要地混淆本发明的各种实施例。
如本文所使用的，术语“上方”、“下方”、“在……之间”以及“在……上”是指一个介质层相对于其它层的相对位置。因此，举例来说，安置在另一层上方或下方的一个层可以与该另一层直接接触或者可以具有一个或多个介入层。此外，安置在两个层之间的一个层可以与该两个层直接接触或者可以具有一个或多个介入层。相比之下，“位于第二层上的第一层”与该第二层接触。另外，一个层相对于其它层的相对位置是在假定操作是相对于衬底执行的情况下来提供的，而无需考虑衬底的绝对定向。
在常规的TMR读取传感器(例如在图1的空气轴承表面(ABS)透视图中所说明的TMR读取传感器100)中，第一屏蔽层S1可以安置在衬底上方。第一屏蔽层S1可以包括也称为坡莫合金(permalloy)的镍铁(NiFe)合金，或用于TMR读取传感器的另一磁屏蔽材料。在一些情况下，第一屏蔽层S1可以由单种屏蔽材料组成。在其它情况下，第一屏蔽层S1可以具有复合结构。举例来说，第一屏蔽层S1可以包括NiFe、NiFe多层、钴铁(CoFe)，或钌(Ru)的一个或多个层。
在第一屏蔽层S1顶上可以安置籽晶层以及AFM层。籽晶层可以包括钽(Ta)、Ru、Ta/Ru双层或其它常规籽晶层。AFM层可以包括各种反铁磁材料，例如IrMn、铂锰(PtMn)、钯锰(PdMn)、镍锰(NiMn)、铑锰(RhMn)，或RhRuMn。IrMn通常用于TMR AFM层中，因为它提供比其它材料更薄的AFM层。
另外，AFM钉扎层可以安置在籽晶层上。AFM钉扎层在特定方向上通过AFM层磁性钉扎，并且可以包括CoFe的第一钉扎层P1，其提供AFM层与第二钉扎层P2之间的材料过渡。在其它情况下，钉扎层可以包括三层体：软磁材料(例如，CoFe)的第一层；Ru、Cr、Ag或Au或其它合适的非磁性材料的第二层；以及软磁材料(例如，CoFe)的第三层。
TMR读取传感器100进一步包括自由层，该自由层通过势垒层与钉扎层分离并且通过罩盖层(capping layer)与第二(顶部)屏蔽层S2分离。自由层包括铁磁性材料，例如，NiFe、CoFe或CoNiFe。势垒层包括绝缘材料，并且可以经选定以提供用于自由层的籽晶层。举例来说，氧化镁(MgO)可用作势垒层。罩盖层隔离自由层与顶部屏蔽层并且包括非磁性材料，例如，Ru、Ta，或其双层。顶部屏蔽S2安置在TMR读取传感器层上方，并且还可以包括NiFe或用于TMR读取传感器的其它常规材料。举例来说，顶部屏蔽S2可以具有类似于第一屏蔽S1的组合物。另外，TMR读取传感器100可以包含反铁磁耦合的柔软偏置(AFC SB)结构，用于磁性偏置自由层。如图2中所说明的，S-S是在ABS处第一屏蔽S1与第二屏蔽S2之间的距离，该距离在此常规实例中是近似25-26nm。
根据各种实施例，提供实现超薄S-S间距的读取磁头架构和制造方法。在各种实施例中，可以包含铱锰(IrMn)的AFM钉扎层可以从TMR膜堆叠的钉扎层的底部移除，因此减小两个屏蔽间隔，同时将AFM钉扎层突出(tabbing)到其余的TMR膜堆叠的任一侧，但是位于“延长”的钉扎层下方。经制造以具有根据各种实施例的此类架构的读取磁头可以保持较强的AFM钉扎强度并且可以更易于制造，其中此类实施例可以在不足20nm薄的S-S间距下针对1Tb/in2超高密度磁记录头而提供。
图2是说明根据各种实施例的示例方法200的操作流程图，可以执行示例方法200以制造具有超薄S-S间距的TMR读取传感器。方法200可以开始于操作210，其中形成第一屏蔽层。第一屏蔽层可以具有单个屏蔽材料结构或复合结构。第一屏蔽层可以包括NiFe、NiFe多层、CoFe或Ru的一或多个层。在操作220中，在第一屏蔽层上沉积籽晶层。籽晶层可以包括Ta、Ru、Ta/Ru双层或其它常规籽晶层。在操作230中，在籽晶层上方形成突出的AFM堆叠层。突出的AFM堆叠层可以包括各种反铁磁材料，例如，IrMn、PtMn、PdMn、NiMn、RhMn或RhRuMn。在操作240中，在AFM堆叠层上方形成钉扎层。钉扎层可以具有例如三层结构，其中第一和第二钉扎层可以是CoFe，其具有非磁性材料，例如，Ru、Cr、Ag或Au，或使第一与第二钉扎层分离的其它合适的非磁性材料。在操作250中，在钉扎层上方形成自由层。自由层可以包括非磁性材料，例如，Ru、Ta，或其双层。在操作260中，形成第二屏蔽层。第二屏蔽层可以具有单个屏蔽材料结构或复合结构。第二屏蔽层可以包括NiFe、NiFe多层、CoFe或Ru的一或多个层。
根据各种实施例，AFM层可以定位在读取磁道的任一侧上，其凹陷到第一屏蔽层中并且充当到钉扎层的底部突起。如下文将描述的，在一些实施例中，AFM层可以基本上是U形或马蹄形。然而，在其它实施例中，AFM层可以采用其它形状/配置，例如，半圆形形状，只要可以维持所需的超薄S-S间距即可。AFM突起可以使用类似于硬偏置掩模的掩模形成，但是具有比读取器TW更宽的中心磁道。此类架构可以产生比常规结构薄很多的S-S间距。在一个实施例中，S-S间距更薄约7nm，而钉扎层仍然由AFM钉扎层在两侧上的钉扎层下方磁性钉扎。
图3A到图3D说明根据一个实施例的各种制造阶段，图3A说明其中籽晶层320被沉积在第一屏蔽层310上的制造阶段，籽晶层320包括光刻过程可用于通过类似于硬偏置掩模但是具有更宽的中心磁道以便留下足够量的第一屏蔽层310以保持其屏蔽特性的掩模界定AFM突起区域。随后可以采用离子铣削以移除暴露的籽晶层320以产生凹部，如图3B中所说明的，之后通过原位离子束沉积或非原位物理气相沉积(PVD)的的AFM堆叠沉积，如图3C中所说明的，其中示出AFM层340(IrMn)和软磁缝合层350(CoFe)。也就是说，AFM层(即，AFM突出区域)可以放置在读取磁道的任一侧上，其可以充当到钉扎层的底部突起，其中AFM突起具有比读取器磁道宽度更宽的中心磁道。原位离子束沉积可以是指紧随TMR籽晶层的铣削之后无需破坏真空的AFM膜堆叠沉积。非原位PVD可以是指在单独的轮次/阶段通过各阶段之间的空气暴露执行TMR籽晶层铣削和AFM膜堆叠沉积。在光阻剂330移走之后，抛光角铣削可以被用于表面平坦化以形成用于不含AFM的TMR堆叠沉积的平坦且平滑的表面。沉积可以在溅镀腔室中进行，并且TMR堆叠，P1/Ru/P2(360)MgO/FL(370)/Cap(380)可以无缝缝合到所形成的AFM底部突起上，如图3D中所说明的。AFM突起与TMR堆叠之间的相对平坦且平滑的界面由上述过程产生，并且可以遵循标准读取器过程，例如，磁性退火、读取器接合形成、SB沉积等。应注意，产生了AFM突起与钉扎层之间的强AFM钉扎，以及钉扎层的P1与P2层之间的强反铁磁耦合(AFC)。还应注意，读取器接合通过离子束局部铣削形成以沿ABS方向产生延长的钉扎层，其由底层AFM突起从两侧钉扎。
图4A到图4B说明根据各种实施例的示例TMR读取传感器，该传感器被制造成具有实现超薄S-S间距的架构。图4A和图4B说明TMR读取传感器400，其中AFM钉扎层420基本上是U形或马蹄形。对于所属领域的技术人员而言显而易见的是，各个实施例可以包含其它形状并且不限于U形设计。在一个实施例中，AFM钉扎层420是IrMn，并且可以安置在屏蔽410-1上方。在AFM钉扎层420上方可以沉积钉扎层。在此示例中，钉扎层分别包含第一钉扎层430和第二钉扎层440以及产生诸如三层结构的非磁性材料435。势垒层450可以安置在钉扎层上方，并且势垒层450可以是例如MgO。TMR读取传感器400还可以包含自由层460和屏蔽410-2，以及AFC SB结构470。如可以理解的，由于AFM钉扎层420具有U形形状，因此屏蔽410-1与410-2之间的S-S间距可以减少。
图5A到图5C说明根据各种实施例制造以具有超薄S-S间距的其它示例TMR读取传感器结构。图5A说明TMR读取传感器500a，其具有第一屏蔽层510-1和基本上U形的AFM钉扎层520，AFM钉扎层520是IrMn。安置在AFM钉扎层520上方的是钉扎层，其具有三层结构(例如，P1530/Ru 535/P2540)。然而，P1530层的中心部分可以具有基本上类似梯形的ABS透视横截面(中心读取磁道)，势垒层550和自由层560(其中的每一者具有基本上类似梯形的ABS透视横截面)可以沉积在其上。TMR读取传感器500a进一步包含AFC SB结构570和第二屏蔽层510-2。应注意，在U形AFM层520的相应边缘与TMR堆叠的中心部分之间存在至少30nm的距离。根据一个实施例，TMR读取传感器500a的第一屏蔽层510-1可以包含多个薄的非磁性层525(在此示例中是两个)。薄的非磁性层525可以是Ru、Cr或其它非磁性材料，每一者具有诸如到之间的厚度。在高频率下，第一屏蔽层510-1(例如，坡莫合金/NiFe)渗透性可能不是最佳的。因此，非磁性层525可用于层压第一屏蔽层510-1，这导致高得多的渗透性，从而产生更好的屏蔽特征/有效性。
图5B说明TMR读取传感器500b，所述传感器具有第一屏蔽层510-1和第二屏蔽层510-2。沉积在第一屏蔽层510-1上的是AFM层520。安置在AFM层520上方的是基本上U形的第一钉扎层，该第一钉扎层包含钉扎层530-1和530-2。沉积在第一钉扎层上方的是第二钉扎层，该第二钉扎层包含由诸如Ru层535间隔开的钉扎层530-3与530-4。沉积在第二钉扎层上的可以是MgO的势垒层550和自由层560。类似于图5A，AFC SB结构570可以安置在第二钉扎层上，第二屏蔽层510-2安置在该AFC SB结构570上方。自由层560的边缘与AFM层520之间的距离可以是30-50nm。
应注意，在图5A的TMR读取传感器500a与图5B的TMR读取传感器500b之间仅有若干接合制造过程和堆叠布置差异。三维AFM(IrMn)层形状是相同的，然而，在两种情况下，自由层的外边缘与FM层的边缘之间的交叉磁道距离约是100nm。
图5C说明根据各种实施例制造的又一TMR读取传感器500c，其具有第一屏蔽层510-1，籽晶层515安置在该第一屏蔽层510-1上。基本上U形的AFM钉扎层520可以安置在籽晶层515和第一屏蔽层510-1上方，AFM钉扎层520是IrMn。安置在AFM钉扎层520上方的是钉扎层，其具有三层结构(例如，P1530/Ru 535/P2540)。然而，P1530层的中心部分可以具有基本上类似梯形的ABS透视横截面，势垒层550和自由层560(其中的每一者具有基本上类似梯形的ABS透视横截面)可以沉积在其上。TMR读取传感器500a进一步包含AFC SB结构570和第二屏蔽层510-2，第二屏蔽层510-2包含另一AFM层575。类似于TMR读取传感器500a，第二屏蔽层510-2可以进一步包含薄的非磁性层565，例如，Ru、Cr等，其可以具有诸如到之间的厚度。
尽管上文就各种示例性实施例和实施方案进行了描述，但应理解，各个实施例中的一或多者中所描述的各种特征、方面和功能性在其适用性上并不限于与其一起描述的特定实施例，而是可单独或以各种组合应用于本申请案一个或多个其它实施例中，无论是否描述此类实施例且无论是否将此类特征呈现为所描述实施例的一部分。因此，本申请案的广度和范围不应由任何上述示例性实施例限制。
除非另有明确陈述，否则在本文档中使用的术语和短语及其变体应该被解释为开放性的，而非限制性的。作为上述内容的示例：术语“包含”应该被理解为意味着“包含但不限于”等；术语“示例”用于提供所论述的项目的示例性示例，而非其穷尽性或限制性列表；术语“一”或“一个”应该被理解为意味着“至少一个”、“一或多个”等；且诸如“常规的”、“传统的”、“通常的”、“标准的”、“已知的”等形容词以及类似含义的术语不应被解释将描述的项目限制到给定时间段或在给定时间内可用的项目，而是实际上应该被理解为涵盖现在或在将来任何时间可用的或已知的常规的、传统的、通常的或标准的技术。同样，虽然本文档参照对于所属领域的一般技术人员将是显而易见或已知的技术，但是此类技术涵盖现在或在将来任何时间对于所属领域的技术人员是显而易见或已知的那些技术。
在一些实例中，诸如“一个或多个”、“至少”、“但不限于”等拓宽性词语和短语的存在不应被理解为意味着在可能不存在此类拓宽性短语的情况下希望或需要较狭窄的情况。术语“模块”的使用并不暗示所描述的或所主张的作为所述模块的一部分的组件或功能都配置在共同的封装中。实际上，模块的各种组件中的任一者或全部(无论是控制逻辑还是其它组件)可以组合在单个封装中或单独地维持并且可以进一步分布在多个分组或封装中或跨越多个位置。
另外，本文中阐述的各个实施例是就示例性框图、流程图和其它说明而描述。对于所属领域的一般技术人员而言在阅读本文档之后将变得显而易见的是，可以实施所说明的实施例和其各种替代方案而无需限制于所说明的实例。举例来说，框图和其随附描述不应被解释为要求特定的架构或配置。
Claims (20)
1.一种制造磁性读取磁头的方法，其包括：
形成第一屏蔽层；
在所述第一屏蔽层上沉积籽晶层；以及
在所述籽晶层上方形成突出的反铁磁堆叠层即AFM堆叠层，使得所述突出的AFM堆叠层导致沿所述磁性读取磁头的读取磁道的两侧凹陷。
2.根据权利要求1所述的方法，其进一步包括：
在所述AFM堆叠层上方形成第一和第二钉扎层；
在所述第一钉扎层上方形成自由层；以及
在所述第一钉扎层上方形成第二屏蔽层。
3.根据权利要求2所述的方法，其中所述第一钉扎层与所述第二钉扎层之间的间隙包括钌Ru。
4.根据权利要求3所述的方法，其中所述AFM堆叠层包括：
AFM层；以及
软磁缝合层。
5.根据权利要求4所述的方法，其中所述AFM堆叠层包括铱锰IrMn、铂锰PtMn或反铁磁材料中的一者。
6.根据权利要求4所述的方法，其中所述软磁缝合层包括铜铁CoFe、CoFe/镍铁NiFe、软磁材料或软磁材料组合中的一者。
7.根据权利要求3所述的方法，其中所述第一屏蔽层与所述第二屏蔽层之间的间距在10nm与18nm之间。
8.根据权利要求7所述的方法，其中所述第一屏蔽层与所述第二屏蔽层之间的间距在10nm与15nm之间。
9.根据权利要求1所述的方法，其中所述读取磁头是隧穿磁阻读取磁头即TMR读取磁头。
10.根据权利要求1所述的方法，其中所述籽晶层包括钽Ta、Ta/Ru、非磁性单层材料或经配置以促进突出的AFM堆叠层材料增长的非磁性多层材料中的一者。
11.根据权利要求1所述的方法，其中形成所述突出的AFM堆叠层包括：
在所述籽晶层上方界定光阻剂掩模；
对未被所述光阻剂掩模覆盖的所述籽晶层和第一屏蔽层进行离子铣削以形成用于所述AFM堆叠层的凹部；以及
沉积所述AFM堆叠层。
12.根据权利要求11所述的方法，其中形成所述突出的AFM堆叠层是原位或非原位执行的。
13.根据权利要求11所述的方法，其进一步包括沿中心读取磁道并且在所述突出的AFM堆叠层的两侧上方在所述籽晶层的其余部分的顶部上沉积TMR堆叠。
14.根据权利要求13所述的方法，其进一步包括对所述TMR堆叠和所述突出的AFM堆叠层进行退火，其中所述退火设定所述TMR堆叠的磁性钉扎方向。
15.一种磁性读取磁头，其包括：
第一屏蔽层；
籽晶层，其沉积在所述第一屏蔽层上；以及
突出的反铁磁堆叠层即AFM堆叠层，其形成在所述籽晶层上方，其中所述突出的AFM堆叠层沿所述磁性读取磁头的读取磁道的两侧凹陷。
16.根据权利要求15所述的读取磁头，其进一步包括：
第一和第二钉扎层，其沉积在所述AFM堆叠层上方；
自由层，其沉积在所述第一钉扎层上方；以及
第二屏蔽层，其沉积在所述第一钉扎层上方。
17.根据权利要求15所述的读取磁头，其中所述突出的AFM堆叠层包括：
AFM层；以及
软磁缝合层。
18.一种硬盘驱动器，其包括：
至少一个可旋转磁盘，其具有磁盘表面；
磁盘驱动器基底；
主轴马达，其附接到所述磁盘驱动器基底并且经配置以支撑所述磁盘相对于所述磁盘驱动器基底表面旋转所述磁盘；以及
磁性读取器，其经配置以读取所述可旋转磁盘表面上的数据，所述磁性读取器包括：
第一屏蔽层；以及
籽晶层，其沉积在所述第一屏蔽层上；以及
突出的反铁磁堆叠层即AFM堆叠层，其形成在所述籽晶层上方，其中所述突出的AFM堆叠层沿所述磁读取器的读取磁道的两侧凹陷。
19.根据权利要求18所述的硬盘驱动器，其中所述磁性读取器进一步包括：
第一和第二钉扎层，其沉积在所述AFM堆叠层上方；
自由层，其沉积在所述第一钉扎层上方；以及
第二屏蔽层，其沉积在所述第一钉扎层上方。
20.根据权利要求18所述的硬盘驱动器，其中所述磁性读取器包括隧穿磁阻读取器即TMR读取器。
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| CN113889153A (zh) * | 2020-07-01 | 2022-01-04 | 西部数据技术公司 | 具有后硬偏置且不具有afm层的磁读传感器和相关方法 |
| CN115798522A (zh) * | 2021-09-09 | 2023-03-14 | 西部数据技术公司 | 具有稳定上读取器的磁性读取传感器及相关方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20150109702A1 (en) | 2015-04-23 |
| CN104751857B (zh) | 2019-02-22 |
| HK1212092A1 (zh) | 2016-06-03 |
| US20160180870A1 (en) | 2016-06-23 |
| US9214172B2 (en) | 2015-12-15 |
| US9830936B2 (en) | 2017-11-28 |
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