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JPS57123895A - Vapor-phase epitaxial growing apparatus - Google Patents

Vapor-phase epitaxial growing apparatus

Info

Publication number
JPS57123895A
JPS57123895A JP840181A JP840181A JPS57123895A JP S57123895 A JPS57123895 A JP S57123895A JP 840181 A JP840181 A JP 840181A JP 840181 A JP840181 A JP 840181A JP S57123895 A JPS57123895 A JP S57123895A
Authority
JP
Japan
Prior art keywords
layer
substrate
gas
inp
introductory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP840181A
Other languages
Japanese (ja)
Inventor
Yoshiharu Yamauchi
Nobuhiko Susa
Hiroshi Kanbe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP840181A priority Critical patent/JPS57123895A/en
Publication of JPS57123895A publication Critical patent/JPS57123895A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain an epitaxial growing layer of high purity and good quality, without requiring time in changing over the growing layer, by reacting gases with gas outlets for formig the first and the second layers divided into the upper downstream layer and the lower upstream layer in a reaction tube.
CONSTITUTION: An InP substrate 25 is placed on a substrate holder 22 at a position (A), and a reaction tube 21 is heated to pass HCl gas through gas introductory pipes 26 and 29 to Ga 210 and In 211. AsH3 is passed through a gas introductory pipe 27 to grow an InGaAs layer on the substrate 25 in a reaction zone (R1). For completing the growth, a cover 23 is moved forward to break the contact of the substrate 25 with the reaction gas, and the introductory pipes 26 and 27 are closed. The substrate 25 is then moved to a position (B) to move the cover 23 backward and introduce PH3 from a gas introductory pipe 28 to grow an InP layer on the substrate 25 in a reaction zone (R2). According to the method, the two-layer growth of InP/InGaAs is carried out.
COPYRIGHT: (C)1982,JPO&Japio
JP840181A 1981-01-22 1981-01-22 Vapor-phase epitaxial growing apparatus Pending JPS57123895A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP840181A JPS57123895A (en) 1981-01-22 1981-01-22 Vapor-phase epitaxial growing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP840181A JPS57123895A (en) 1981-01-22 1981-01-22 Vapor-phase epitaxial growing apparatus

Publications (1)

Publication Number Publication Date
JPS57123895A true JPS57123895A (en) 1982-08-02

Family

ID=11692152

Family Applications (1)

Application Number Title Priority Date Filing Date
JP840181A Pending JPS57123895A (en) 1981-01-22 1981-01-22 Vapor-phase epitaxial growing apparatus

Country Status (1)

Country Link
JP (1) JPS57123895A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59229816A (en) * 1983-06-13 1984-12-24 Agency Of Ind Science & Technol Vapor growth apparatus for compound semiconductor
JPS63140522A (en) * 1986-12-02 1988-06-13 Nec Corp Hydride vapor phase growth

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5354179A (en) * 1976-10-27 1978-05-17 Nec Corp Gas phase growing apparatus for multilayer crystal

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5354179A (en) * 1976-10-27 1978-05-17 Nec Corp Gas phase growing apparatus for multilayer crystal

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59229816A (en) * 1983-06-13 1984-12-24 Agency Of Ind Science & Technol Vapor growth apparatus for compound semiconductor
JPS63140522A (en) * 1986-12-02 1988-06-13 Nec Corp Hydride vapor phase growth

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