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JPS57149721A - Method of vapor epitaxial growth - Google Patents

Method of vapor epitaxial growth

Info

Publication number
JPS57149721A
JPS57149721A JP3461781A JP3461781A JPS57149721A JP S57149721 A JPS57149721 A JP S57149721A JP 3461781 A JP3461781 A JP 3461781A JP 3461781 A JP3461781 A JP 3461781A JP S57149721 A JPS57149721 A JP S57149721A
Authority
JP
Japan
Prior art keywords
concentration
appr
bomb
triethyl
flow rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3461781A
Other languages
Japanese (ja)
Inventor
Takashi Fukui
Yoshiharu Horikoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP3461781A priority Critical patent/JPS57149721A/en
Publication of JPS57149721A publication Critical patent/JPS57149721A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To perform the vapor epitaxy of a compound semiconductor with low impurity concentration, by making the mixture of the organic metal compound containing elements to be added and the organic metal compound containing constitutent elements a material for adding impurities. CONSTITUTION:The mixture of diethyl Zn (0.3% in molarity) and triethyl In is stored in a bomb 1, and triethyl In for raw material in a bomb 2. Purified 5 H24 is controlled 6, 7, 9, 10 in flow rate (cc/min) to change each into 10, 10<3>, 10<3>, 10<3>, and PH3 is controlled 8 in flow rate (cc/min) into 10 to be supplied to a reaction tube 12. Further, a susceptor 19 is set at 600 deg.C by frequency heating 18. Thus, the vapor epitaxy of InP grows the P type InP with appr. 1X10<16>/cm<3> of Zn concentration on a substrate 15 to obtain a layer in low concentration with appr. 1/10 or less of a conventional one.
JP3461781A 1981-03-12 1981-03-12 Method of vapor epitaxial growth Pending JPS57149721A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3461781A JPS57149721A (en) 1981-03-12 1981-03-12 Method of vapor epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3461781A JPS57149721A (en) 1981-03-12 1981-03-12 Method of vapor epitaxial growth

Publications (1)

Publication Number Publication Date
JPS57149721A true JPS57149721A (en) 1982-09-16

Family

ID=12419329

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3461781A Pending JPS57149721A (en) 1981-03-12 1981-03-12 Method of vapor epitaxial growth

Country Status (1)

Country Link
JP (1) JPS57149721A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60176991A (en) * 1984-02-20 1985-09-11 Matsushita Electric Ind Co Ltd Device for growing crystal of organometallic thermal decomposition
JPS6366965A (en) * 1986-09-08 1988-03-25 Toshiba Corp Stacked solid-state imaging device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60176991A (en) * 1984-02-20 1985-09-11 Matsushita Electric Ind Co Ltd Device for growing crystal of organometallic thermal decomposition
JPS6366965A (en) * 1986-09-08 1988-03-25 Toshiba Corp Stacked solid-state imaging device

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