[go: up one dir, main page]

JPS5768019A - Gas phase growing method - Google Patents

Gas phase growing method

Info

Publication number
JPS5768019A
JPS5768019A JP14471380A JP14471380A JPS5768019A JP S5768019 A JPS5768019 A JP S5768019A JP 14471380 A JP14471380 A JP 14471380A JP 14471380 A JP14471380 A JP 14471380A JP S5768019 A JPS5768019 A JP S5768019A
Authority
JP
Japan
Prior art keywords
substrate
grown
gas phase
gas
tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14471380A
Other languages
Japanese (ja)
Inventor
Shigenori Takagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP14471380A priority Critical patent/JPS5768019A/en
Publication of JPS5768019A publication Critical patent/JPS5768019A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To obtain a grown layer having good surface state on a substrate to be grown by preventing the drop of a precipitate by reacting a source material with a raw gas in a gas phase growing reaction tube and providing a substrate of the same type at an interval on the substrate when reactive product is introduced onto the substrate to grow an epitaxial layer. CONSTITUTION:A boat 14 containing Ga source 15 and a liner tube 20 are mounted in a reaction tube 1, and the first GaAs substrate 18 to be grown through a substrate holder 17 is disposed in a liner tube 20. The second substrate 16 of the same shape and area as the substrate 18 is arranged with posts at an interval on the substrate 18, H2 carrier gas is flowed from a gas inlet 13 in this state, and the tube 11 is heated to the prescribed temperature therein. Thereafter, vapor of AsCl2 or the like is introduced from a gas inlet 12, and a gas phase epitaxial layer is accumulated on the substrate 18. Thus, the precipitate produced on the tubes 11 and 20 are dropped, but can be prevented by the substrate 16, thereby obtaining a grown layer having less defects on the substrate 18.
JP14471380A 1980-10-15 1980-10-15 Gas phase growing method Pending JPS5768019A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14471380A JPS5768019A (en) 1980-10-15 1980-10-15 Gas phase growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14471380A JPS5768019A (en) 1980-10-15 1980-10-15 Gas phase growing method

Publications (1)

Publication Number Publication Date
JPS5768019A true JPS5768019A (en) 1982-04-26

Family

ID=15368554

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14471380A Pending JPS5768019A (en) 1980-10-15 1980-10-15 Gas phase growing method

Country Status (1)

Country Link
JP (1) JPS5768019A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4901670A (en) * 1988-08-22 1990-02-20 Santa Barbara Research Center Elemental mercury source for metal-organic chemical vapor deposition

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4901670A (en) * 1988-08-22 1990-02-20 Santa Barbara Research Center Elemental mercury source for metal-organic chemical vapor deposition

Similar Documents

Publication Publication Date Title
US4504329A (en) Process for the epitaxial deposition of III-V compounds utilizing a binary alloy as the metallic source
JPS5768019A (en) Gas phase growing method
JPS57149721A (en) Method of vapor epitaxial growth
JPS54112790A (en) Source boat for vapor phase growth of compound semiconductor
JPS54106081A (en) Growth method in vapor phase
JPS5484973A (en) Vapour-phase growth method of compound semiconductor
JPS58191423A (en) Vapor growth device for 3-5 semiconductor
JPS6483597A (en) Method for vapor growth of compound semiconductor
JPS5649520A (en) Vapor growth of compound semiconductor
JPS56124228A (en) Method for low-tension epitaxial growth
JPS5520282A (en) Vapor phase growing method for crystal
JPS6446917A (en) Chemical vapor growth device
JPS5681924A (en) Susceptor for vertical type high frequency heating vapor phase growing system
JPS5474672A (en) Gaas vapor phase growth method
JPS5669877A (en) Manufacture of luminous element
JPS5650509A (en) Vapor-phase epitaxial growth method
JPS5520213A (en) Vapor phase growing device
JPS561525A (en) Epitaxial growing method of silicon crystal
JPS56100115A (en) Manufacture of silicon nitride whisker
JPS5461463A (en) Vapor phase growth method for semiconductor
JPS6489320A (en) Vapor growth method
JPS5683933A (en) Liquid phase epitaxial growth
JPS5727999A (en) Vapor phase growing method for gan
JPS5626800A (en) Vapor phase epitaxial growing method
Franzosi et al. Process of Deposition of Single-Crystal Silicon Directly From the Vapor Phase