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JPS54112790A - Source boat for vapor phase growth of compound semiconductor - Google Patents

Source boat for vapor phase growth of compound semiconductor

Info

Publication number
JPS54112790A
JPS54112790A JP1989778A JP1989778A JPS54112790A JP S54112790 A JPS54112790 A JP S54112790A JP 1989778 A JP1989778 A JP 1989778A JP 1989778 A JP1989778 A JP 1989778A JP S54112790 A JPS54112790 A JP S54112790A
Authority
JP
Japan
Prior art keywords
source
gas
source boat
boat
vapor phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1989778A
Other languages
Japanese (ja)
Inventor
Masaharu Nogami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1989778A priority Critical patent/JPS54112790A/en
Publication of JPS54112790A publication Critical patent/JPS54112790A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To increase the reproducibility and controllability of growing rate, by constituting a source boat of plural small chambers, which contain crystal source and are separated from each other, and by constituting the source boat in such a manner that raw material gas and the carrier gas may flow separately into each small chambers of the source boat. CONSTITUTION:In a source boat 21 constituted of plural small chambers 23 independent of each other, a mixed gas 25 of a raw material gas (N2 or H2 gas contg. AsCl3) with a carrier gas (N2 or H2) is made flow in through an inlet 26 in order to react the mixed gas with the source (metallic Ga). In this case, because, even when the vapor phase growth is repeated, the total surface area of the source 22 and at the same time the quantity of the reaction in each chamber 23 are kept at nearly constant, both the reproducibility at each growth step and the precise controllability of the growth rate are increased and efficiency of the reaction of the mixed gas with source 22 is improved.
JP1989778A 1978-02-24 1978-02-24 Source boat for vapor phase growth of compound semiconductor Pending JPS54112790A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1989778A JPS54112790A (en) 1978-02-24 1978-02-24 Source boat for vapor phase growth of compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1989778A JPS54112790A (en) 1978-02-24 1978-02-24 Source boat for vapor phase growth of compound semiconductor

Publications (1)

Publication Number Publication Date
JPS54112790A true JPS54112790A (en) 1979-09-03

Family

ID=12011979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1989778A Pending JPS54112790A (en) 1978-02-24 1978-02-24 Source boat for vapor phase growth of compound semiconductor

Country Status (1)

Country Link
JP (1) JPS54112790A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6613143B1 (en) * 2001-07-06 2003-09-02 Technologies And Devices International, Inc. Method for fabricating bulk GaN single crystals
US6936357B2 (en) 2001-07-06 2005-08-30 Technologies And Devices International, Inc. Bulk GaN and ALGaN single crystals
US6955719B2 (en) 2001-03-30 2005-10-18 Technologies And Devices, Inc. Manufacturing methods for semiconductor devices with multiple III-V material layers
US7501023B2 (en) 2001-07-06 2009-03-10 Technologies And Devices, International, Inc. Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
US8647435B1 (en) 2006-10-11 2014-02-11 Ostendo Technologies, Inc. HVPE apparatus and methods for growth of p-type single crystal group III nitride materials

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6955719B2 (en) 2001-03-30 2005-10-18 Technologies And Devices, Inc. Manufacturing methods for semiconductor devices with multiple III-V material layers
US7670435B2 (en) 2001-03-30 2010-03-02 Technologies And Devices International, Inc. Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPE
US6613143B1 (en) * 2001-07-06 2003-09-02 Technologies And Devices International, Inc. Method for fabricating bulk GaN single crystals
US6936357B2 (en) 2001-07-06 2005-08-30 Technologies And Devices International, Inc. Bulk GaN and ALGaN single crystals
US7279047B2 (en) 2001-07-06 2007-10-09 Technologies And Devices, International, Inc. Reactor for extended duration growth of gallium containing single crystals
US7501023B2 (en) 2001-07-06 2009-03-10 Technologies And Devices, International, Inc. Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
US8647435B1 (en) 2006-10-11 2014-02-11 Ostendo Technologies, Inc. HVPE apparatus and methods for growth of p-type single crystal group III nitride materials
US9416464B1 (en) 2006-10-11 2016-08-16 Ostendo Technologies, Inc. Apparatus and methods for controlling gas flows in a HVPE reactor

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