JPS6437832A - Method of growing compound semiconductor crystal - Google Patents
Method of growing compound semiconductor crystalInfo
- Publication number
- JPS6437832A JPS6437832A JP19373387A JP19373387A JPS6437832A JP S6437832 A JPS6437832 A JP S6437832A JP 19373387 A JP19373387 A JP 19373387A JP 19373387 A JP19373387 A JP 19373387A JP S6437832 A JPS6437832 A JP S6437832A
- Authority
- JP
- Japan
- Prior art keywords
- source
- gas
- flowed
- carrier
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To form a compound semiconductor crystal in an epitaxial manner by a method wherein an inert gas is used as a carrier, a source-gas composed of a compound containing a methyl group is flowed, the film of an element as the component of a source is shaped, the source-gas is stopped, the gas of another compound is flowed and the film of an element as a component is formed. CONSTITUTION:When a GaAs single crystal is grown onto a GaAs single crystal substrate by utilizing an atomic layer epitaxial method, N2 gas is used as a carrier, and (CH3)3Ga is employed as a Ca source and AsH3 as an As source. The substrate is brought to 500 deg.C and a bubbler to 3 deg.C. The flow rate of (CU3)3Ga is brought to 40cm<3>/min at 0 deg.C and 1 atm. to shape the monoatomic layer of Ga, and the feed of (CH3)3Ga is stopped. AsH3 is flowed at the flow rate of 480cm<3>/min at 0 deg.C and 1 atm. to form the monoatomic layer of As, and a GaAs single crystal layer is shaped in an epitaxial manner. Since an inert gas is used as the carrier, there is no possibility of the promotion of thermal decomposition, thus largely improving controllability at the time of crystal growth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19373387A JPS6437832A (en) | 1987-08-04 | 1987-08-04 | Method of growing compound semiconductor crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19373387A JPS6437832A (en) | 1987-08-04 | 1987-08-04 | Method of growing compound semiconductor crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6437832A true JPS6437832A (en) | 1989-02-08 |
Family
ID=16312903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19373387A Pending JPS6437832A (en) | 1987-08-04 | 1987-08-04 | Method of growing compound semiconductor crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6437832A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004504496A (en) * | 2000-07-07 | 2004-02-12 | エイエスエム・インターナシヨナル・エヌ・ブイ | Film deposition on substrates |
| US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
| US7201803B2 (en) | 2001-03-07 | 2007-04-10 | Applied Materials, Inc. | Valve control system for atomic layer deposition chamber |
-
1987
- 1987-08-04 JP JP19373387A patent/JPS6437832A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004504496A (en) * | 2000-07-07 | 2004-02-12 | エイエスエム・インターナシヨナル・エヌ・ブイ | Film deposition on substrates |
| US7201803B2 (en) | 2001-03-07 | 2007-04-10 | Applied Materials, Inc. | Valve control system for atomic layer deposition chamber |
| US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
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