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JPS5645899A - Vapor phase growing method for gallium nitride - Google Patents

Vapor phase growing method for gallium nitride

Info

Publication number
JPS5645899A
JPS5645899A JP12052479A JP12052479A JPS5645899A JP S5645899 A JPS5645899 A JP S5645899A JP 12052479 A JP12052479 A JP 12052479A JP 12052479 A JP12052479 A JP 12052479A JP S5645899 A JPS5645899 A JP S5645899A
Authority
JP
Japan
Prior art keywords
gan
gas
carrier gas
growth
hcl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12052479A
Other languages
Japanese (ja)
Other versions
JPS6221758B2 (en
Inventor
Kiyoshi Yoneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP12052479A priority Critical patent/JPS5645899A/en
Publication of JPS5645899A publication Critical patent/JPS5645899A/en
Publication of JPS6221758B2 publication Critical patent/JPS6221758B2/ja
Granted legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain a flat GaN layer on the surface of a GaN epitaxial layer without causing the abnormal growth of GaN by feeding NH3 gas and carrier gas toward a Ga source in a direction contrary to that in crystal growth after finishing the crystal growth.
CONSTITUTION: NH3 gas and carrier gas are fed from inflow pipe 11, and HCl gas and carrier gas from inflow pipe 15. Ga and HCl react, and GaCl formed flows into reaction tube 10, where it is converted into GaN by reaction with NH3. The resulting HCl and H2, unreacted NH3 and the carrier gas are exhausted from outflow pipe 21. Valves 13, 16, 23 are open during the epitaxial growth, after the growth the valves are closed, and valves 14, 24 are opened to introduce NH3 gas and carrier gas from inflow pipe 22 in a flow contrary to the former flow. By carrying out slow cooling, the reaction of HCl accumulated in pipe 15 and Ga does not take place to prevent GaCl from spouting from the nozzle tip. Thus, the abnormal growth of GaN is not caused on the surface of a GaN epitaxial layer to give a flat GaN epitaxial layer.
COPYRIGHT: (C)1981,JPO&Japio
JP12052479A 1979-09-18 1979-09-18 Vapor phase growing method for gallium nitride Granted JPS5645899A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12052479A JPS5645899A (en) 1979-09-18 1979-09-18 Vapor phase growing method for gallium nitride

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12052479A JPS5645899A (en) 1979-09-18 1979-09-18 Vapor phase growing method for gallium nitride

Publications (2)

Publication Number Publication Date
JPS5645899A true JPS5645899A (en) 1981-04-25
JPS6221758B2 JPS6221758B2 (en) 1987-05-14

Family

ID=14788382

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12052479A Granted JPS5645899A (en) 1979-09-18 1979-09-18 Vapor phase growing method for gallium nitride

Country Status (1)

Country Link
JP (1) JPS5645899A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6054910A (en) * 1983-09-06 1985-03-29 Central Glass Co Ltd Preparation of silicon carbide powder
JPH08125222A (en) * 1994-10-25 1996-05-17 Toyoda Gosei Co Ltd Method for manufacture of group iii nitride semiconductor
JPH08264835A (en) * 1995-03-27 1996-10-11 Sumitomo Electric Ind Ltd Compound semiconductor light emitting device and manufacturing method thereof
JPH08264836A (en) * 1995-03-27 1996-10-11 Sumitomo Electric Ind Ltd Compound semiconductor light emitting device and manufacturing method thereof
JPH0940490A (en) * 1995-07-27 1997-02-10 Hitachi Cable Ltd Method for producing gallium nitride crystal
EP0937790A3 (en) * 1998-01-26 2003-08-27 Sumitomo Electric Industries, Ltd. Method of making GaN single crystal and apparatus for making GaN single crystal
JP2009177219A (en) * 2009-05-15 2009-08-06 Mitsubishi Chemicals Corp METHOD FOR MANUFACTURING GaN-BASED SEMICONDUCTOR DEVICE

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6054910A (en) * 1983-09-06 1985-03-29 Central Glass Co Ltd Preparation of silicon carbide powder
JPH08125222A (en) * 1994-10-25 1996-05-17 Toyoda Gosei Co Ltd Method for manufacture of group iii nitride semiconductor
JPH08264835A (en) * 1995-03-27 1996-10-11 Sumitomo Electric Ind Ltd Compound semiconductor light emitting device and manufacturing method thereof
JPH08264836A (en) * 1995-03-27 1996-10-11 Sumitomo Electric Ind Ltd Compound semiconductor light emitting device and manufacturing method thereof
JPH0940490A (en) * 1995-07-27 1997-02-10 Hitachi Cable Ltd Method for producing gallium nitride crystal
EP0937790A3 (en) * 1998-01-26 2003-08-27 Sumitomo Electric Industries, Ltd. Method of making GaN single crystal and apparatus for making GaN single crystal
JP2009177219A (en) * 2009-05-15 2009-08-06 Mitsubishi Chemicals Corp METHOD FOR MANUFACTURING GaN-BASED SEMICONDUCTOR DEVICE

Also Published As

Publication number Publication date
JPS6221758B2 (en) 1987-05-14

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