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JPS5484973A - Vapour-phase growth method of compound semiconductor - Google Patents

Vapour-phase growth method of compound semiconductor

Info

Publication number
JPS5484973A
JPS5484973A JP15319777A JP15319777A JPS5484973A JP S5484973 A JPS5484973 A JP S5484973A JP 15319777 A JP15319777 A JP 15319777A JP 15319777 A JP15319777 A JP 15319777A JP S5484973 A JPS5484973 A JP S5484973A
Authority
JP
Japan
Prior art keywords
source
boat
sections
thickness
stream
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15319777A
Other languages
Japanese (ja)
Other versions
JPS5712526B2 (en
Inventor
Junji Komeno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15319777A priority Critical patent/JPS5484973A/en
Publication of JPS5484973A publication Critical patent/JPS5484973A/en
Publication of JPS5712526B2 publication Critical patent/JPS5712526B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To obtain a thickness of a good-precision epitaxically grown layer with a good producibility by setting the source metal quantity in a source boat so that this quantity may decrease gradually from the upper stream of reaction gas toward the lower stream. CONSTITUTION:The shape of quartz source boat 6 is sa follows: the inside of boat 6 is divided into plural sections, and bottoms of sections are gradually made shallower according as going from the upper stream side of reaction gas toward the lower stream, and the surface of Ga source 2 stored in these sections is arranged to make the height uniform. Next, this boat 6 is arranged in a reaction tube, and carrier gas such as Ar2 and N2 is used to flow As and Cl3 source 1. Then, source 1 is caused to react on Ga source 2 while heating source 1, thereby growing a prescribed- thickness GaAs layer on GaAs substrate 3. Thus, the total area of Ga source 2 is always held in a constant state even if source 2 is reduced by repeating the growth process, and the quantity of the product which flows to substrate 3 is held constantly, so that a growth speed can become uniform.
JP15319777A 1977-12-20 1977-12-20 Vapour-phase growth method of compound semiconductor Granted JPS5484973A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15319777A JPS5484973A (en) 1977-12-20 1977-12-20 Vapour-phase growth method of compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15319777A JPS5484973A (en) 1977-12-20 1977-12-20 Vapour-phase growth method of compound semiconductor

Publications (2)

Publication Number Publication Date
JPS5484973A true JPS5484973A (en) 1979-07-06
JPS5712526B2 JPS5712526B2 (en) 1982-03-11

Family

ID=15557154

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15319777A Granted JPS5484973A (en) 1977-12-20 1977-12-20 Vapour-phase growth method of compound semiconductor

Country Status (1)

Country Link
JP (1) JPS5484973A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003075237A (en) * 2001-08-31 2003-03-12 Nagano:Kk Float liquid level meter with contact

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6172940A (en) * 1984-09-17 1986-04-15 Yukihisa Ooyama Trivet with heating water passages

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003075237A (en) * 2001-08-31 2003-03-12 Nagano:Kk Float liquid level meter with contact

Also Published As

Publication number Publication date
JPS5712526B2 (en) 1982-03-11

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