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JPS5493358A - Boat for growing for liquid phase epitaxial - Google Patents

Boat for growing for liquid phase epitaxial

Info

Publication number
JPS5493358A
JPS5493358A JP15897777A JP15897777A JPS5493358A JP S5493358 A JPS5493358 A JP S5493358A JP 15897777 A JP15897777 A JP 15897777A JP 15897777 A JP15897777 A JP 15897777A JP S5493358 A JPS5493358 A JP S5493358A
Authority
JP
Japan
Prior art keywords
storage
growing
barrier
molten liquid
boat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15897777A
Other languages
Japanese (ja)
Inventor
Masanobu Koide
Mikihiko Shimura
Tsukasa Takeuchi
Masamitsu Uehara
Akira Fujimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Tateisi Electronics Co filed Critical Omron Tateisi Electronics Co
Priority to JP15897777A priority Critical patent/JPS5493358A/en
Publication of JPS5493358A publication Critical patent/JPS5493358A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain the growing layer of good quality without contamination, by providing the molten liquid storage to the boat for epitaxial growing and the barrier slidable containing the semiconductor substrate with a distance from the storage, and by contacting the barrier with the storage with slide on growing.
CONSTITUTION: The storage 3 containing the molten liquid 2 such as Ga, GaAs adding Si being the impurity is formed at the intermediate part of the quartz tube 1 and the barrier 4 is formed at the location apart from the storage 3. In this case, the slide groove 5 is placed lengthwise so that the storage 3 and the barrier 4 are respectively divided into two. Next, in this groove 5, the longitudinal groove 6a for the both sides containing the simiconductor substrate 7 and the semiconductor substrate support body 6 having the intermediate part 6b through the storage 3 are implanted. With this constitution, the quartz tube 1 is heated in the vacuum furnace and atomospheric gas 9 is fed from the gas inlet hole 8 placed at the storage 3 and it is discharged from the exhaust outlet 10. With this condition, the support 6 is slided and the substrate 7 is dipped with the molten liquid 2, performing growing.
COPYRIGHT: (C)1979,JPO&Japio
JP15897777A 1977-12-30 1977-12-30 Boat for growing for liquid phase epitaxial Pending JPS5493358A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15897777A JPS5493358A (en) 1977-12-30 1977-12-30 Boat for growing for liquid phase epitaxial

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15897777A JPS5493358A (en) 1977-12-30 1977-12-30 Boat for growing for liquid phase epitaxial

Publications (1)

Publication Number Publication Date
JPS5493358A true JPS5493358A (en) 1979-07-24

Family

ID=15683503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15897777A Pending JPS5493358A (en) 1977-12-30 1977-12-30 Boat for growing for liquid phase epitaxial

Country Status (1)

Country Link
JP (1) JPS5493358A (en)

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