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JPS5461463A - Vapor phase growth method for semiconductor - Google Patents

Vapor phase growth method for semiconductor

Info

Publication number
JPS5461463A
JPS5461463A JP12756477A JP12756477A JPS5461463A JP S5461463 A JPS5461463 A JP S5461463A JP 12756477 A JP12756477 A JP 12756477A JP 12756477 A JP12756477 A JP 12756477A JP S5461463 A JPS5461463 A JP S5461463A
Authority
JP
Japan
Prior art keywords
phosphorus
concentration
silicon
vapor phase
polycrystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12756477A
Other languages
Japanese (ja)
Inventor
Masao Tezuka
Kazunori Fukuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12756477A priority Critical patent/JPS5461463A/en
Publication of JPS5461463A publication Critical patent/JPS5461463A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To perform stable vapor phase growing with high concentration of phosphorus for phosphorus added polycrystal on the semiconductor substrate.
CONSTITUTION: Phosphorus added polycrystal silicon is grown on the silicon oxide film 3400Å in film thickness on the silicon single crystal substrate with gas phase growing unit. By selecting PH3/SiH4 mol ratio as 3×10-2, the change in the phosphorus concentration to the change in the reaction gas flow is minimized and poly- crystal silicon of uniform phosphorus concentration is obtained. When the concentration of silane is taken higher, the polycrystal silicon of greater phosphorus concentration can be obtained even if the temperature is lowered to 700°C
COPYRIGHT: (C)1979,JPO&Japio
JP12756477A 1977-10-26 1977-10-26 Vapor phase growth method for semiconductor Pending JPS5461463A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12756477A JPS5461463A (en) 1977-10-26 1977-10-26 Vapor phase growth method for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12756477A JPS5461463A (en) 1977-10-26 1977-10-26 Vapor phase growth method for semiconductor

Publications (1)

Publication Number Publication Date
JPS5461463A true JPS5461463A (en) 1979-05-17

Family

ID=14963144

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12756477A Pending JPS5461463A (en) 1977-10-26 1977-10-26 Vapor phase growth method for semiconductor

Country Status (1)

Country Link
JP (1) JPS5461463A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6489320A (en) * 1987-09-29 1989-04-03 Nec Corp Vapor growth method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6489320A (en) * 1987-09-29 1989-04-03 Nec Corp Vapor growth method

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