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JPS5316396A - Gaseous phase growing method for single crystalline alumina - Google Patents

Gaseous phase growing method for single crystalline alumina

Info

Publication number
JPS5316396A
JPS5316396A JP9152576A JP9152576A JPS5316396A JP S5316396 A JPS5316396 A JP S5316396A JP 9152576 A JP9152576 A JP 9152576A JP 9152576 A JP9152576 A JP 9152576A JP S5316396 A JPS5316396 A JP S5316396A
Authority
JP
Japan
Prior art keywords
gaseous phase
single crystalline
growing method
crystalline alumina
phase growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9152576A
Other languages
Japanese (ja)
Other versions
JPS5617317B2 (en
Inventor
Masaru Ihara
Masayuki Chifuku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9152576A priority Critical patent/JPS5316396A/en
Publication of JPS5316396A publication Critical patent/JPS5316396A/en
Publication of JPS5617317B2 publication Critical patent/JPS5617317B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To grow a uniform single crystal line alumina film with good crystallinity at gaseous phase by supplying CHe and CO2 gases in a prescribed molar ratio into a reaction tube provided with a heated single crystal line silicon substrate and Al.
COPYRIGHT: (C)1978,JPO&Japio
JP9152576A 1976-07-30 1976-07-30 Gaseous phase growing method for single crystalline alumina Granted JPS5316396A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9152576A JPS5316396A (en) 1976-07-30 1976-07-30 Gaseous phase growing method for single crystalline alumina

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9152576A JPS5316396A (en) 1976-07-30 1976-07-30 Gaseous phase growing method for single crystalline alumina

Publications (2)

Publication Number Publication Date
JPS5316396A true JPS5316396A (en) 1978-02-15
JPS5617317B2 JPS5617317B2 (en) 1981-04-21

Family

ID=14028829

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9152576A Granted JPS5316396A (en) 1976-07-30 1976-07-30 Gaseous phase growing method for single crystalline alumina

Country Status (1)

Country Link
JP (1) JPS5316396A (en)

Also Published As

Publication number Publication date
JPS5617317B2 (en) 1981-04-21

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