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JPS561525A - Epitaxial growing method of silicon crystal - Google Patents

Epitaxial growing method of silicon crystal

Info

Publication number
JPS561525A
JPS561525A JP7566179A JP7566179A JPS561525A JP S561525 A JPS561525 A JP S561525A JP 7566179 A JP7566179 A JP 7566179A JP 7566179 A JP7566179 A JP 7566179A JP S561525 A JPS561525 A JP S561525A
Authority
JP
Japan
Prior art keywords
substrates
sicl2
pipe
reaction tube
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7566179A
Other languages
Japanese (ja)
Inventor
Ryokichi Takahashi
Koji Kozuka
Masahiko Kogirima
Michiyoshi Maki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7566179A priority Critical patent/JPS561525A/en
Publication of JPS561525A publication Critical patent/JPS561525A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To manufacture numerous epitaxial growth substrates of good quality through one time of treatment, by causing the unequalized reaction of SiCl2 to epitaxially grow Si crystal on the Si substrates. CONSTITUTION:Source gas of SiCl4 is conducted from a pipe 31 to a reaction tube 2 through a pipe 3. Carrier gas of H2, N2, Ar or the like is conducted from another pipe 32 into the reaction tube through the pipe 3. The SiCl4 gas reacts with the Si of an Si pellet layer 4 located in the high-temperature zone of the reaction tube 2 to produce SiCl2. The SiCl2 is conveyed by the carrier gas to a downstream low-temperature zone wherein Si substrates 5 are placed. The SiCl2 performs unequalized reaction to epitaxially grow thin films of Si crystal on the substrates 5. The pressure in the reaction tube 2 needs to be kept as low as 0.1-10 Torr in order to accelerate the diffusion of the source gas to the substrates 5, make the internal resistance of the substrates and the thickness of the films uniform and prevent the gas-phase pyrolysis of the SiCl4.
JP7566179A 1979-06-18 1979-06-18 Epitaxial growing method of silicon crystal Pending JPS561525A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7566179A JPS561525A (en) 1979-06-18 1979-06-18 Epitaxial growing method of silicon crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7566179A JPS561525A (en) 1979-06-18 1979-06-18 Epitaxial growing method of silicon crystal

Publications (1)

Publication Number Publication Date
JPS561525A true JPS561525A (en) 1981-01-09

Family

ID=13582623

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7566179A Pending JPS561525A (en) 1979-06-18 1979-06-18 Epitaxial growing method of silicon crystal

Country Status (1)

Country Link
JP (1) JPS561525A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57202428A (en) * 1981-06-05 1982-12-11 Chugai Ro Kogyo Kaisha Ltd Oxygen concentration adjuster in burner
US4582560A (en) * 1982-12-06 1986-04-15 Sri International In situ production of silicon crystals on substrate for use in solar cell construction
JPH0897159A (en) * 1994-09-29 1996-04-12 Handotai Process Kenkyusho:Kk Method and system for epitaxial growth

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57202428A (en) * 1981-06-05 1982-12-11 Chugai Ro Kogyo Kaisha Ltd Oxygen concentration adjuster in burner
US4582560A (en) * 1982-12-06 1986-04-15 Sri International In situ production of silicon crystals on substrate for use in solar cell construction
JPH0897159A (en) * 1994-09-29 1996-04-12 Handotai Process Kenkyusho:Kk Method and system for epitaxial growth
US5769942A (en) * 1994-09-29 1998-06-23 Semiconductor Process Laboratory Co. Method for epitaxial growth
US6110290A (en) * 1994-09-29 2000-08-29 Semiconductor Process Laboratory Co. Method for epitaxial growth and apparatus for epitaxial growth

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