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JPS5544771A - Manufacture of semiconductor - Google Patents

Manufacture of semiconductor

Info

Publication number
JPS5544771A
JPS5544771A JP11848978A JP11848978A JPS5544771A JP S5544771 A JPS5544771 A JP S5544771A JP 11848978 A JP11848978 A JP 11848978A JP 11848978 A JP11848978 A JP 11848978A JP S5544771 A JPS5544771 A JP S5544771A
Authority
JP
Japan
Prior art keywords
substrate
growth
layer
polycrystalline
monocrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11848978A
Other languages
Japanese (ja)
Inventor
Junji Sakurai
Kaoru Ikegami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11848978A priority Critical patent/JPS5544771A/en
Publication of JPS5544771A publication Critical patent/JPS5544771A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0278—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline channels on wafers after forming insulating device isolations

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To simultaneously form high-quality vapour phase growth layers on an Si monocrystalline substrate in special condition by forming insulating layer at a portion for polycrystalline growth of the substrate.
CONSTITUTION: SiO2-layer 22 is formed at a portion for the growth of the polycrystalline layer of Si monocrystalline substrate 21. Simultaneous vapour phase growth is made of monocrystalline epitaxial layer 23 and polycrystalline epitaxial layer 24 on the substrate 21 by spplying the monosilane diluted by carrier gas at a higher rate than the values forming a straight line interconnecting the crystal temperature v. crystal growth speed characteristic points of 0.50 and 1.25μm/min. at 950 and 1,100°C respectively with the supply rate of monosilane as parameter while keeping the substrate 21 at 950W1,100°C. No polycrystalline Si grows or many defects occur to the monocrystalline Si-layer if growth temperature comes above 1,100°C and below 950°C.
COPYRIGHT: (C)1980,JPO&Japio
JP11848978A 1978-09-26 1978-09-26 Manufacture of semiconductor Pending JPS5544771A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11848978A JPS5544771A (en) 1978-09-26 1978-09-26 Manufacture of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11848978A JPS5544771A (en) 1978-09-26 1978-09-26 Manufacture of semiconductor

Publications (1)

Publication Number Publication Date
JPS5544771A true JPS5544771A (en) 1980-03-29

Family

ID=14737932

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11848978A Pending JPS5544771A (en) 1978-09-26 1978-09-26 Manufacture of semiconductor

Country Status (1)

Country Link
JP (1) JPS5544771A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4919028A (en) * 1972-06-12 1974-02-20

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4919028A (en) * 1972-06-12 1974-02-20

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