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JPS5284964A - Vapor phase growth method for semiconductors - Google Patents

Vapor phase growth method for semiconductors

Info

Publication number
JPS5284964A
JPS5284964A JP81776A JP81776A JPS5284964A JP S5284964 A JPS5284964 A JP S5284964A JP 81776 A JP81776 A JP 81776A JP 81776 A JP81776 A JP 81776A JP S5284964 A JPS5284964 A JP S5284964A
Authority
JP
Japan
Prior art keywords
semiconductors
vapor phase
growth method
phase growth
compresing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP81776A
Other languages
Japanese (ja)
Inventor
Hironori Inoue
Takaya Suzuki
Hiroshi Suga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP81776A priority Critical patent/JPS5284964A/en
Publication of JPS5284964A publication Critical patent/JPS5284964A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE: To improve the reproducibility and controllability in impurity concentration controlling of grown layers by performing vapor growth using a susceptor compresing subsequent covering of carbon with SiC, Si, SiO2.
COPYRIGHT: (C)1977,JPO&Japio
JP81776A 1976-01-07 1976-01-07 Vapor phase growth method for semiconductors Pending JPS5284964A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP81776A JPS5284964A (en) 1976-01-07 1976-01-07 Vapor phase growth method for semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP81776A JPS5284964A (en) 1976-01-07 1976-01-07 Vapor phase growth method for semiconductors

Publications (1)

Publication Number Publication Date
JPS5284964A true JPS5284964A (en) 1977-07-14

Family

ID=11484216

Family Applications (1)

Application Number Title Priority Date Filing Date
JP81776A Pending JPS5284964A (en) 1976-01-07 1976-01-07 Vapor phase growth method for semiconductors

Country Status (1)

Country Link
JP (1) JPS5284964A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58416U (en) * 1981-06-24 1983-01-05 日本電気ホームエレクトロニクス株式会社 Semiconductor manufacturing jig
JPS5987037A (en) * 1982-10-06 1984-05-19 ゼネラル・インスツルメント・コ−ポレ−シヨン Sensor element used in chemical vapor deposition process performed in radiant absorbing type heater system
JPS62293713A (en) * 1986-06-13 1987-12-21 Toshiba Ceramics Co Ltd Susceptor for epitaxial growth equipment
JPH0273625A (en) * 1988-09-08 1990-03-13 Nec Corp Equipment for manufacture of semiconductor device
US6955720B2 (en) * 1999-03-23 2005-10-18 Asml Holding N.V. Plasma deposition of spin chucks to reduce contamination of Silicon wafers

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58416U (en) * 1981-06-24 1983-01-05 日本電気ホームエレクトロニクス株式会社 Semiconductor manufacturing jig
JPS5987037A (en) * 1982-10-06 1984-05-19 ゼネラル・インスツルメント・コ−ポレ−シヨン Sensor element used in chemical vapor deposition process performed in radiant absorbing type heater system
JPS62293713A (en) * 1986-06-13 1987-12-21 Toshiba Ceramics Co Ltd Susceptor for epitaxial growth equipment
JPH0273625A (en) * 1988-09-08 1990-03-13 Nec Corp Equipment for manufacture of semiconductor device
US6955720B2 (en) * 1999-03-23 2005-10-18 Asml Holding N.V. Plasma deposition of spin chucks to reduce contamination of Silicon wafers

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