JPS54146576A - Vapor growth method - Google Patents
Vapor growth methodInfo
- Publication number
- JPS54146576A JPS54146576A JP5530878A JP5530878A JPS54146576A JP S54146576 A JPS54146576 A JP S54146576A JP 5530878 A JP5530878 A JP 5530878A JP 5530878 A JP5530878 A JP 5530878A JP S54146576 A JPS54146576 A JP S54146576A
- Authority
- JP
- Japan
- Prior art keywords
- zns
- substrate
- temperature part
- quality
- gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000843 powder Substances 0.000 abstract 2
- 239000010453 quartz Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 206010011376 Crepitations Diseases 0.000 abstract 1
- 208000037656 Respiratory Sounds Diseases 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
Landscapes
- Light Receiving Elements (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To obtain a high-quality ZnS single crystal on the substrate by providing the ZnS powder at the high-temperature part in the quartz reaction tube along with H2 flown in and thus controlling GaP of the low-temperature part or temperature t and growing speed V of the GaAs substrate.
CONSTITUTION: The ZnS4 powder is provided at the high-temperature part of quartz tube 6 plus H2 flown in, and GaP of the low-temperature part or ZnS on GaAs substrate 5 is educed. As these materials features the grid constant close to ZnS, a high-quality crystal can be educed onto the substrate but some crack is caused the growth layer when the substrate is returned into the room temperature after reaction since the expansion coefficients differ. If the stress is lessended by giving a selective eduction via the SiO2 mask, the crack can be prevented. However, the selective growth is impossible under t<800°C. Now, 800°C<t<900°C and Oμ/h<v(growing speed)<20μ/h are satisfied with (950-t)/7.5 secured. As a result, a high-quality and crackless ZnS crystal can be formed selectively on the GaP and GaAs substrate via the SiO2 mask.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5530878A JPS54146576A (en) | 1978-05-09 | 1978-05-09 | Vapor growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5530878A JPS54146576A (en) | 1978-05-09 | 1978-05-09 | Vapor growth method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54146576A true JPS54146576A (en) | 1979-11-15 |
| JPS5635021B2 JPS5635021B2 (en) | 1981-08-14 |
Family
ID=12994932
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5530878A Granted JPS54146576A (en) | 1978-05-09 | 1978-05-09 | Vapor growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54146576A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58141828U (en) * | 1982-03-19 | 1983-09-24 | 自動車機器技術研究組合 | liquid level sensor |
| US4521373A (en) * | 1982-08-23 | 1985-06-04 | General Electric Company | Liquid level sensor |
-
1978
- 1978-05-09 JP JP5530878A patent/JPS54146576A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5635021B2 (en) | 1981-08-14 |
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