JPS52134376A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS52134376A JPS52134376A JP5173676A JP5173676A JPS52134376A JP S52134376 A JPS52134376 A JP S52134376A JP 5173676 A JP5173676 A JP 5173676A JP 5173676 A JP5173676 A JP 5173676A JP S52134376 A JPS52134376 A JP S52134376A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- production
- semiconductor device
- sio
- prevented
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: The distortion of a Si substrate owing to the difference in the coefficient of thermal expansion between the Si substrate and the SiO2 film formed thereon is prevented and the warpage occuring in the difference in the film thickness of the SiO2 film formed on the Si substrate through high temperature oxidation at the time of producing ICs, etc. is prevented.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5173676A JPS52134376A (en) | 1976-05-06 | 1976-05-06 | Production of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5173676A JPS52134376A (en) | 1976-05-06 | 1976-05-06 | Production of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS52134376A true JPS52134376A (en) | 1977-11-10 |
Family
ID=12895175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5173676A Pending JPS52134376A (en) | 1976-05-06 | 1976-05-06 | Production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS52134376A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5854637A (en) * | 1981-09-29 | 1983-03-31 | Fujitsu Ltd | Semiconductor device |
| JPS59107525A (en) * | 1982-12-13 | 1984-06-21 | Nec Corp | Semiconductor device |
-
1976
- 1976-05-06 JP JP5173676A patent/JPS52134376A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5854637A (en) * | 1981-09-29 | 1983-03-31 | Fujitsu Ltd | Semiconductor device |
| JPS59107525A (en) * | 1982-12-13 | 1984-06-21 | Nec Corp | Semiconductor device |
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