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JPS5626800A - Vapor phase epitaxial growing method - Google Patents

Vapor phase epitaxial growing method

Info

Publication number
JPS5626800A
JPS5626800A JP10074079A JP10074079A JPS5626800A JP S5626800 A JPS5626800 A JP S5626800A JP 10074079 A JP10074079 A JP 10074079A JP 10074079 A JP10074079 A JP 10074079A JP S5626800 A JPS5626800 A JP S5626800A
Authority
JP
Japan
Prior art keywords
temp
substrate
vapor phase
phase epitaxial
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10074079A
Other languages
Japanese (ja)
Inventor
Takashi Fukui
Yoshiharu Horikoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10074079A priority Critical patent/JPS5626800A/en
Publication of JPS5626800A publication Critical patent/JPS5626800A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To enable the epitaxial growth of a high quality semiconductor crystal by introducing a carrier gas contg. a II-V group organometallic compound and a hydride gas into a reaction tube and independently controlling the temp. of a substrate and the temp. of the reactive gases in vapor phase epitaxial growth.
CONSTITUTION: In the vapor phase epitaxial growth of a II-V group compound semiconductor using an organometallic compound and a hydride as starting materials, carrier gas A such as N2 contg. a II-V group organometallic compound such as (CH3)3Ga and hydride gas B such as AsH3 gas are introduced into reaction tube 3 from pipes 1, 2, respectively, and substrate 6 and reactive gases A, B are heated with substrate 6 heating heater 9 and resistance heating furnace 8, respectively to carry out independent temp. control. Thus, the temp. of gases A, B on substrate 6 can be maintained at a constant value, and a high quality semiconductor crystal suitable for manufacturing semiconductor laser, etc. is obtd.
COPYRIGHT: (C)1981,JPO&Japio
JP10074079A 1979-08-09 1979-08-09 Vapor phase epitaxial growing method Pending JPS5626800A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10074079A JPS5626800A (en) 1979-08-09 1979-08-09 Vapor phase epitaxial growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10074079A JPS5626800A (en) 1979-08-09 1979-08-09 Vapor phase epitaxial growing method

Publications (1)

Publication Number Publication Date
JPS5626800A true JPS5626800A (en) 1981-03-14

Family

ID=14281952

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10074079A Pending JPS5626800A (en) 1979-08-09 1979-08-09 Vapor phase epitaxial growing method

Country Status (1)

Country Link
JP (1) JPS5626800A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005343705A (en) * 2004-05-31 2005-12-15 Sumitomo Electric Ind Ltd Method for producing AlxGayIn1-xyN crystal
JPWO2007023722A1 (en) * 2005-08-25 2009-02-26 住友電気工業株式会社 GaxIn1-xN (0 ≦ x ≦ 1) crystal manufacturing method, GaxIn1-xN (0 ≦ x ≦ 1) crystal substrate, GaN crystal manufacturing method, GaN crystal substrate and product

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005343705A (en) * 2004-05-31 2005-12-15 Sumitomo Electric Ind Ltd Method for producing AlxGayIn1-xyN crystal
JP4513421B2 (en) * 2004-05-31 2010-07-28 住友電気工業株式会社 Method for producing AlxGayIn1-xyN crystal
JPWO2007023722A1 (en) * 2005-08-25 2009-02-26 住友電気工業株式会社 GaxIn1-xN (0 ≦ x ≦ 1) crystal manufacturing method, GaxIn1-xN (0 ≦ x ≦ 1) crystal substrate, GaN crystal manufacturing method, GaN crystal substrate and product

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