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JPS5571696A - Vapor phase epitaxial growing device - Google Patents

Vapor phase epitaxial growing device

Info

Publication number
JPS5571696A
JPS5571696A JP14591178A JP14591178A JPS5571696A JP S5571696 A JPS5571696 A JP S5571696A JP 14591178 A JP14591178 A JP 14591178A JP 14591178 A JP14591178 A JP 14591178A JP S5571696 A JPS5571696 A JP S5571696A
Authority
JP
Japan
Prior art keywords
gas
substrate
purge
outlet
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14591178A
Other languages
Japanese (ja)
Inventor
Jun Ishii
Kazuhisa Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14591178A priority Critical patent/JPS5571696A/en
Publication of JPS5571696A publication Critical patent/JPS5571696A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To cheaply form epitaxial-grown layers having steep different compsn. distributions by making the space between a crystal growing gas outlet and an opposite crystal face to be grown as narrow as possible and providing an outlet for gas purge.
CONSTITUTION: Si substrate 1 is mounted on susceptor 2 in quartz tube 3 of the vapor phase epitaxial growing device, and gas feeder 5 is provided with crystal growing feed gas introduction pipes 6, 7, inlets 6a, 7a, purge gas pipe 8 and outlet 8a opposite to substrate 1. The feed gas existing space between each of the outlets and substrate 1 is made as narrow as possible. After forming a desired grown layer on substrate 1 by a known method, a purge gas such as H2 is introduced from arrow D to rapidly purge the residual gas, and a next different feed gas is introduced. Thus, grown layers of different compsns. can be formed in order in a steep compsn. distribution state.
COPYRIGHT: (C)1980,JPO&Japio
JP14591178A 1978-11-22 1978-11-22 Vapor phase epitaxial growing device Pending JPS5571696A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14591178A JPS5571696A (en) 1978-11-22 1978-11-22 Vapor phase epitaxial growing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14591178A JPS5571696A (en) 1978-11-22 1978-11-22 Vapor phase epitaxial growing device

Publications (1)

Publication Number Publication Date
JPS5571696A true JPS5571696A (en) 1980-05-29

Family

ID=15395914

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14591178A Pending JPS5571696A (en) 1978-11-22 1978-11-22 Vapor phase epitaxial growing device

Country Status (1)

Country Link
JP (1) JPS5571696A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61145826A (en) * 1984-12-20 1986-07-03 Matsushita Electronics Corp Vapor phase epitaxial growth apparatus
KR100407507B1 (en) * 2001-05-18 2003-12-01 주식회사 피에스티 Gas injector for ALD device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61145826A (en) * 1984-12-20 1986-07-03 Matsushita Electronics Corp Vapor phase epitaxial growth apparatus
KR100407507B1 (en) * 2001-05-18 2003-12-01 주식회사 피에스티 Gas injector for ALD device

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