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JPS54157780A - Production of silicon single crystal - Google Patents

Production of silicon single crystal

Info

Publication number
JPS54157780A
JPS54157780A JP6578978A JP6578978A JPS54157780A JP S54157780 A JPS54157780 A JP S54157780A JP 6578978 A JP6578978 A JP 6578978A JP 6578978 A JP6578978 A JP 6578978A JP S54157780 A JPS54157780 A JP S54157780A
Authority
JP
Japan
Prior art keywords
silicon single
single crystal
silicon
crucible
carbon content
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6578978A
Other languages
Japanese (ja)
Inventor
Masaharu Watanabe
Yasuhiro Imanishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6578978A priority Critical patent/JPS54157780A/en
Publication of JPS54157780A publication Critical patent/JPS54157780A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: In czochralski method silicon single crystal production, a silica crucible enclosed by hot zone member made of graphite provided with silicon nitride coated layer is used, to thereby provide a silicon single crystal of low carbon content.
CONSTITUTION: Polycrystalline silicon body is melted in a silica crucible 2 reinforced by a graphite crucible 3 placed in a chamber 1 maintained in an innert gas atomosphere. The molten silicon liquid is lifted up by seed of silicon single cystral to produce a silicon single crystal. Hot zone members exposed to high temperature, including graphite crucible 3, receipt dish 4, heater 5, insulating cylinder 7, seed chuck 11 are all provided with gas impermeable Si3N4 coated layer with conversion ratio of greater than 95%. This means prevents CO generation, thereby providing silicon single crystal with carbon content of about 1016 atoms/cm3.
COPYRIGHT: (C)1979,JPO&Japio
JP6578978A 1978-06-02 1978-06-02 Production of silicon single crystal Pending JPS54157780A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6578978A JPS54157780A (en) 1978-06-02 1978-06-02 Production of silicon single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6578978A JPS54157780A (en) 1978-06-02 1978-06-02 Production of silicon single crystal

Publications (1)

Publication Number Publication Date
JPS54157780A true JPS54157780A (en) 1979-12-12

Family

ID=13297140

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6578978A Pending JPS54157780A (en) 1978-06-02 1978-06-02 Production of silicon single crystal

Country Status (1)

Country Link
JP (1) JPS54157780A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57121684U (en) * 1981-01-19 1982-07-28
JPS58104096A (en) * 1981-10-23 1983-06-21 Toshiba Ceramics Co Ltd Drawing-up device for silicon single crystal
EP1947203A1 (en) * 2006-12-27 2008-07-23 General Electric Company Methods for reducing carbon contamination when melting highly reactive alloys
US7790101B2 (en) 2006-12-27 2010-09-07 General Electric Company Articles for use with highly reactive alloys
US8906292B2 (en) 2012-07-27 2014-12-09 General Electric Company Crucible and facecoat compositions
US8992824B2 (en) 2012-12-04 2015-03-31 General Electric Company Crucible and extrinsic facecoat compositions
JP2015093793A (en) * 2013-11-11 2015-05-18 信越半導体株式会社 Single crystal production method
US9802243B2 (en) 2012-02-29 2017-10-31 General Electric Company Methods for casting titanium and titanium aluminide alloys
US10391547B2 (en) 2014-06-04 2019-08-27 General Electric Company Casting mold of grading with silicon carbide

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57121684U (en) * 1981-01-19 1982-07-28
JPS58104096A (en) * 1981-10-23 1983-06-21 Toshiba Ceramics Co Ltd Drawing-up device for silicon single crystal
EP1947203A1 (en) * 2006-12-27 2008-07-23 General Electric Company Methods for reducing carbon contamination when melting highly reactive alloys
US7582133B2 (en) 2006-12-27 2009-09-01 General Electric Company Methods for reducing carbon contamination when melting highly reactive alloys
US7790101B2 (en) 2006-12-27 2010-09-07 General Electric Company Articles for use with highly reactive alloys
US9802243B2 (en) 2012-02-29 2017-10-31 General Electric Company Methods for casting titanium and titanium aluminide alloys
US8906292B2 (en) 2012-07-27 2014-12-09 General Electric Company Crucible and facecoat compositions
US8992824B2 (en) 2012-12-04 2015-03-31 General Electric Company Crucible and extrinsic facecoat compositions
US9803923B2 (en) 2012-12-04 2017-10-31 General Electric Company Crucible and extrinsic facecoat compositions and methods for melting titanium and titanium aluminide alloys
JP2015093793A (en) * 2013-11-11 2015-05-18 信越半導体株式会社 Single crystal production method
US10391547B2 (en) 2014-06-04 2019-08-27 General Electric Company Casting mold of grading with silicon carbide

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