JPS54157780A - Production of silicon single crystal - Google Patents
Production of silicon single crystalInfo
- Publication number
- JPS54157780A JPS54157780A JP6578978A JP6578978A JPS54157780A JP S54157780 A JPS54157780 A JP S54157780A JP 6578978 A JP6578978 A JP 6578978A JP 6578978 A JP6578978 A JP 6578978A JP S54157780 A JPS54157780 A JP S54157780A
- Authority
- JP
- Japan
- Prior art keywords
- silicon single
- single crystal
- silicon
- crucible
- carbon content
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 7
- 229910052710 silicon Inorganic materials 0.000 title abstract 7
- 239000010703 silicon Substances 0.000 title abstract 7
- 239000013078 crystal Substances 0.000 title abstract 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910002804 graphite Inorganic materials 0.000 abstract 3
- 239000010439 graphite Substances 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6578978A JPS54157780A (en) | 1978-06-02 | 1978-06-02 | Production of silicon single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6578978A JPS54157780A (en) | 1978-06-02 | 1978-06-02 | Production of silicon single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54157780A true JPS54157780A (en) | 1979-12-12 |
Family
ID=13297140
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6578978A Pending JPS54157780A (en) | 1978-06-02 | 1978-06-02 | Production of silicon single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54157780A (ja) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57121684U (ja) * | 1981-01-19 | 1982-07-28 | ||
| JPS58104096A (ja) * | 1981-10-23 | 1983-06-21 | Toshiba Ceramics Co Ltd | 単結晶シリコン引上装置 |
| EP1947203A1 (en) * | 2006-12-27 | 2008-07-23 | General Electric Company | Methods for reducing carbon contamination when melting highly reactive alloys |
| US7790101B2 (en) | 2006-12-27 | 2010-09-07 | General Electric Company | Articles for use with highly reactive alloys |
| US8906292B2 (en) | 2012-07-27 | 2014-12-09 | General Electric Company | Crucible and facecoat compositions |
| US8992824B2 (en) | 2012-12-04 | 2015-03-31 | General Electric Company | Crucible and extrinsic facecoat compositions |
| JP2015093793A (ja) * | 2013-11-11 | 2015-05-18 | 信越半導体株式会社 | 単結晶製造方法 |
| US9802243B2 (en) | 2012-02-29 | 2017-10-31 | General Electric Company | Methods for casting titanium and titanium aluminide alloys |
| US10391547B2 (en) | 2014-06-04 | 2019-08-27 | General Electric Company | Casting mold of grading with silicon carbide |
-
1978
- 1978-06-02 JP JP6578978A patent/JPS54157780A/ja active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57121684U (ja) * | 1981-01-19 | 1982-07-28 | ||
| JPS58104096A (ja) * | 1981-10-23 | 1983-06-21 | Toshiba Ceramics Co Ltd | 単結晶シリコン引上装置 |
| EP1947203A1 (en) * | 2006-12-27 | 2008-07-23 | General Electric Company | Methods for reducing carbon contamination when melting highly reactive alloys |
| US7582133B2 (en) | 2006-12-27 | 2009-09-01 | General Electric Company | Methods for reducing carbon contamination when melting highly reactive alloys |
| US7790101B2 (en) | 2006-12-27 | 2010-09-07 | General Electric Company | Articles for use with highly reactive alloys |
| US9802243B2 (en) | 2012-02-29 | 2017-10-31 | General Electric Company | Methods for casting titanium and titanium aluminide alloys |
| US8906292B2 (en) | 2012-07-27 | 2014-12-09 | General Electric Company | Crucible and facecoat compositions |
| US8992824B2 (en) | 2012-12-04 | 2015-03-31 | General Electric Company | Crucible and extrinsic facecoat compositions |
| US9803923B2 (en) | 2012-12-04 | 2017-10-31 | General Electric Company | Crucible and extrinsic facecoat compositions and methods for melting titanium and titanium aluminide alloys |
| JP2015093793A (ja) * | 2013-11-11 | 2015-05-18 | 信越半導体株式会社 | 単結晶製造方法 |
| US10391547B2 (en) | 2014-06-04 | 2019-08-27 | General Electric Company | Casting mold of grading with silicon carbide |
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