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JPS54124878A - Continuous lift type single crystal preparation and apparatus thereof - Google Patents

Continuous lift type single crystal preparation and apparatus thereof

Info

Publication number
JPS54124878A
JPS54124878A JP3173578A JP3173578A JPS54124878A JP S54124878 A JPS54124878 A JP S54124878A JP 3173578 A JP3173578 A JP 3173578A JP 3173578 A JP3173578 A JP 3173578A JP S54124878 A JPS54124878 A JP S54124878A
Authority
JP
Japan
Prior art keywords
crucible
single crystal
silicon
crystal
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3173578A
Other languages
Japanese (ja)
Other versions
JPS5910960B2 (en
Inventor
Fukuhiko Suga
Kenji Tomizawa
Shinichiro Kobayashi
Tadaaki Sugawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP3173578A priority Critical patent/JPS5910960B2/en
Publication of JPS54124878A publication Critical patent/JPS54124878A/en
Publication of JPS5910960B2 publication Critical patent/JPS5910960B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To provide a single silicon crystal with an enhanced crystallinity and a uniform dorpant distribution in the direction of drawing, the crystal drawing is performed while molten silicon and dopant is continuously fed to the drawing crusible without opening the crucible.
CONSTITUTION: A machined Si polycrystalline rol 20 is inserted through the opening 11 of the rotary shaft 7 bottom and elevated to the bottom opening of the silica crucible 2. Si polycrystal is charged through the top of the furnace 1 into the crucible 2 and melted by the main heater 4 and the auxiliary heater 5 in innert gas atomosphere. In the crucible 2, the temperature is adjusted so that silicon is melted between a and b, and solid between b and c. The crucible 2 is rotated together with the rotary shaft 7, and a single crystal 18 is lifted by using a seed crystal 17. At the same time, the quantity of Si equal to the lifted-up single crystal is replenished by elevating the rod 20 to the zone a to b so that the level of the molten silicon 19 is maintained constant. Thus, the process assures the same continuous condition is silicon drawing as well as impurity concentration in the formed single crystal.
COPYRIGHT: (C)1979,JPO&Japio
JP3173578A 1978-03-22 1978-03-22 Continuous pulling single crystal production method and equipment Expired JPS5910960B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3173578A JPS5910960B2 (en) 1978-03-22 1978-03-22 Continuous pulling single crystal production method and equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3173578A JPS5910960B2 (en) 1978-03-22 1978-03-22 Continuous pulling single crystal production method and equipment

Publications (2)

Publication Number Publication Date
JPS54124878A true JPS54124878A (en) 1979-09-28
JPS5910960B2 JPS5910960B2 (en) 1984-03-12

Family

ID=12339285

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3173578A Expired JPS5910960B2 (en) 1978-03-22 1978-03-22 Continuous pulling single crystal production method and equipment

Country Status (1)

Country Link
JP (1) JPS5910960B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0095384A2 (en) * 1982-05-26 1983-11-30 Konica Corporation Vacuum deposition apparatus
JP2012236755A (en) * 2011-05-12 2012-12-06 Korea Inst Of Energy Research Apparatus for growing single crystal silicon ingot having reusable dual crucible for silicon melting

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0335480Y2 (en) * 1986-12-15 1991-07-26

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0095384A2 (en) * 1982-05-26 1983-11-30 Konica Corporation Vacuum deposition apparatus
JP2012236755A (en) * 2011-05-12 2012-12-06 Korea Inst Of Energy Research Apparatus for growing single crystal silicon ingot having reusable dual crucible for silicon melting
US9040010B2 (en) 2011-05-12 2015-05-26 Korea Institute Of Energy Research Apparatus for manufacturing single crystal silicon ingot having reusable dual crucible for silicon melting

Also Published As

Publication number Publication date
JPS5910960B2 (en) 1984-03-12

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