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JPS5520213A - Vapor phase growing device - Google Patents

Vapor phase growing device

Info

Publication number
JPS5520213A
JPS5520213A JP9049878A JP9049878A JPS5520213A JP S5520213 A JPS5520213 A JP S5520213A JP 9049878 A JP9049878 A JP 9049878A JP 9049878 A JP9049878 A JP 9049878A JP S5520213 A JPS5520213 A JP S5520213A
Authority
JP
Japan
Prior art keywords
wafers
temp
flowing direction
reactive gas
susceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9049878A
Other languages
Japanese (ja)
Inventor
Masataka Nomura
Yoshio Kono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP9049878A priority Critical patent/JPS5520213A/en
Publication of JPS5520213A publication Critical patent/JPS5520213A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To improve the thickness distribution of each grown layer along the flowing direction of a reactive gas, in the title device contg. many wafers for manufacturing a semiconductor device, by making the temp. of both ends of the reaction region lower than that of the center and by alternately changing the gas flowing direction.
CONSTITUTION: Substrate Si single crystal wafers 3 are mounted on susceptor 2 in reaction tube 1, and susceptor 2 is heated to a fixed temp. of 400W1200°C with heaters 4 while flowing H2. At this time, RF coils are made tight in the central part and loose in the peripheral part to give a temp. gradient. Reactive gas 5 of SiH2Cl2 mixed into H2 is then flowed to vapor phase grow Si on wafers 3. The reactive gas flowing direction is alternately changed by operating feed gas change- over valves 6,8 and exhaust gas change-over valves 7,9. By this method the thickness distribution of each polycrystalline Si layer on wafers 3 is improved, and autodoping is uniformed every wafer in case of Si epitaxial growth.
COPYRIGHT: (C)1980,JPO&Japio
JP9049878A 1978-07-26 1978-07-26 Vapor phase growing device Pending JPS5520213A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9049878A JPS5520213A (en) 1978-07-26 1978-07-26 Vapor phase growing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9049878A JPS5520213A (en) 1978-07-26 1978-07-26 Vapor phase growing device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP12819085A Division JPS6117493A (en) 1985-06-14 1985-06-14 Vapor-phase treatment of plate articles

Publications (1)

Publication Number Publication Date
JPS5520213A true JPS5520213A (en) 1980-02-13

Family

ID=14000159

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9049878A Pending JPS5520213A (en) 1978-07-26 1978-07-26 Vapor phase growing device

Country Status (1)

Country Link
JP (1) JPS5520213A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6054910A (en) * 1983-09-06 1985-03-29 Central Glass Co Ltd Preparation of silicon carbide powder
US6450803B2 (en) 1998-01-12 2002-09-17 Tokyo Electron Limited Heat treatment apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6054910A (en) * 1983-09-06 1985-03-29 Central Glass Co Ltd Preparation of silicon carbide powder
US6450803B2 (en) 1998-01-12 2002-09-17 Tokyo Electron Limited Heat treatment apparatus

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