JPS5491175A - Vapour-phase growth method of compound semiconductor crystal - Google Patents
Vapour-phase growth method of compound semiconductor crystalInfo
- Publication number
- JPS5491175A JPS5491175A JP16070177A JP16070177A JPS5491175A JP S5491175 A JPS5491175 A JP S5491175A JP 16070177 A JP16070177 A JP 16070177A JP 16070177 A JP16070177 A JP 16070177A JP S5491175 A JPS5491175 A JP S5491175A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- reaction tube
- compound semiconductor
- temperature
- vapour
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To make the precise control of C doping quantity possible by using CO gas as an impurity source to mix H2 gas and reactive gas over a reduction temperature when As ags or N2 gas is used as carrier gas to grow epitaxially a P-type V-III group compound semiconductor layer in a vapour phase.
CONSTITUTION: GaAs substrate 5 is provided in reaction tube 1, and Ga source 4 is provided in inside cylinder 4 provided inside reaction tube 1. Next, carrier gas of N2 or Ar which does not include CO is fed into circular space 1b of reaction tube 1 from entrance 1d, and CO gas is flowed from entrance 1e. After that, AsCl3 gas and H2 gas are flowed from entrances 2b and 2e of inside tube 2 respectively, and at this time, the addition quantity of H2 is defined as 0.01 to 30%. Thus, a temperature near upper stream part 1a of reaction tube 1 is set below 400°C, and reduction is not performed there. Then, AsCl3 reactive gas and H2 gas are mixed in crystal growing region 1c where a temperature is set over 600°C, and a crystal layer is generated on substrate 5.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16070177A JPS5491175A (en) | 1977-12-28 | 1977-12-28 | Vapour-phase growth method of compound semiconductor crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16070177A JPS5491175A (en) | 1977-12-28 | 1977-12-28 | Vapour-phase growth method of compound semiconductor crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5491175A true JPS5491175A (en) | 1979-07-19 |
| JPS5537095B2 JPS5537095B2 (en) | 1980-09-25 |
Family
ID=15720593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16070177A Granted JPS5491175A (en) | 1977-12-28 | 1977-12-28 | Vapour-phase growth method of compound semiconductor crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5491175A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017188670A (en) * | 2014-05-26 | 2017-10-12 | 宇辰 張 | Zero-dimensional electronic device and manufacturing method thereof |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016136682A1 (en) | 2015-02-25 | 2016-09-01 | 日立三菱水力株式会社 | Variable-speed generator-motor device and variable-speed generator-motor system |
| CN112236934B (en) | 2018-06-07 | 2024-04-19 | 日立三菱水力株式会社 | Variable speed electric generator |
| WO2020013015A1 (en) | 2018-07-09 | 2020-01-16 | 日立三菱水力株式会社 | Variable-speed generator-motor device |
-
1977
- 1977-12-28 JP JP16070177A patent/JPS5491175A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017188670A (en) * | 2014-05-26 | 2017-10-12 | 宇辰 張 | Zero-dimensional electronic device and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5537095B2 (en) | 1980-09-25 |
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