JPS5788094A - Vapor phase epitaxial manufacture of crystal - Google Patents

Abstract

PURPOSE: To sharpen a change in carrier concn. at the interface between the 1st and 2nd electrically conductive layers by perfectly inhibiting a doping gas from reaching to a substrate set in a liner tube in a reaction tube by moving the liner tube during growing the 1st layer on the substrate.

CONSTITUTION: In order to manufacture the titled crystal for GaAsMES FET, a semi-insulating GaAs substrate 18 is set in a growing temp. region at the down stream side of a furnace from the opening of a quartz pipe 12 for introducing a doping gas, and the furnace is heated. The substrate 18 is well separated from the down stream side end of a liner tube 13 toward the upper stream side, and the tube 13 is forced into the upper stream side and brought into close contact with a quartz reaction tube 10. When the furnace reaches a stationary state, AsCl₃/H₂ and H₂s are introduced from pipes 11, 12, respectively to start growth. The former compound alone passes over metallic Ga 17 and reaches the substrate 18, and the latter compound is directly led to an exhaust port 21. After growing a non-doped layer for a prescribed time, by pulling out a pulling rod 15 to the down stream side, the upper stream side end of the tube 13 is placed at the down stream side from the opening of the pipe 12, so H₂S reaches the substrate 18, and an n type crystal layer grows.

COPYRIGHT: (C)1982,JPO&Japio