[go: up one dir, main page]

JPS5788094A - Vapor phase epitaxial manufacture of crystal - Google Patents

Vapor phase epitaxial manufacture of crystal

Info

Publication number
JPS5788094A
JPS5788094A JP16235680A JP16235680A JPS5788094A JP S5788094 A JPS5788094 A JP S5788094A JP 16235680 A JP16235680 A JP 16235680A JP 16235680 A JP16235680 A JP 16235680A JP S5788094 A JPS5788094 A JP S5788094A
Authority
JP
Japan
Prior art keywords
stream side
substrate
tube
furnace
down stream
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16235680A
Other languages
English (en)
Inventor
Masayoshi Miyauchi
Hirokuni Tokuda
Mitsugi Higashiura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16235680A priority Critical patent/JPS5788094A/ja
Publication of JPS5788094A publication Critical patent/JPS5788094A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP16235680A 1980-11-18 1980-11-18 Vapor phase epitaxial manufacture of crystal Pending JPS5788094A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16235680A JPS5788094A (en) 1980-11-18 1980-11-18 Vapor phase epitaxial manufacture of crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16235680A JPS5788094A (en) 1980-11-18 1980-11-18 Vapor phase epitaxial manufacture of crystal

Publications (1)

Publication Number Publication Date
JPS5788094A true JPS5788094A (en) 1982-06-01

Family

ID=15753001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16235680A Pending JPS5788094A (en) 1980-11-18 1980-11-18 Vapor phase epitaxial manufacture of crystal

Country Status (1)

Country Link
JP (1) JPS5788094A (ja)

Similar Documents

Publication Publication Date Title
JPS5788094A (en) Vapor phase epitaxial manufacture of crystal
JPS5284964A (en) Vapor phase growth method for semiconductors
JPS5788095A (en) Vapor phase growing method
JPS5649520A (en) Vapor growth of compound semiconductor
JPS5624928A (en) Electrode forming method of semiconductor
JPS57149721A (en) Method of vapor epitaxial growth
JPS5727999A (en) Vapor phase growing method for gan
JPS5489565A (en) Gas phase growing method of semiconductor
JPS5649519A (en) Vapor growth of compound semiconductor
JPS54106169A (en) Vapor epitaxial growth device
JPS5474672A (en) Gaas vapor phase growth method
JPS57196793A (en) Epitaxial growth method
JPS56133820A (en) Vapor epitaxial growth of arsenic gallium
JPS5580722A (en) Arsenic recovering method
JPS55118628A (en) Manufacturing method of epitaxial wafer
JPS5618414A (en) Method for vapor phase epitaxial growth of compound semiconductor layer on inp substrate
JPS5717126A (en) Manufacture of silicon carbide process tube for semiconductor
JPS5768019A (en) Gas phase growing method
JPS5469062A (en) Vapor growth method for magnespinel
JPS5623740A (en) Multilayer liquid phase epitaxial growing method
JPS54121283A (en) Manufacture of silicon single crystal by pulling method and apparatus therefor
JPS5489567A (en) Gas phase growth method for compound semiconductor crystal
JPS52103399A (en) Production of gallium nitride
Dobosz et al. An Influence of the Rate of Epitaxial Growth on Physical Properties of Gallium Nitride
JPS573799A (en) Vapor phase growing method of compound semiconductor