JP4737364B2 - 液状エポキシ樹脂組成物及び半導体装置 - Google Patents
液状エポキシ樹脂組成物及び半導体装置 Download PDFInfo
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- JP4737364B2 JP4737364B2 JP2004147553A JP2004147553A JP4737364B2 JP 4737364 B2 JP4737364 B2 JP 4737364B2 JP 2004147553 A JP2004147553 A JP 2004147553A JP 2004147553 A JP2004147553 A JP 2004147553A JP 4737364 B2 JP4737364 B2 JP 4737364B2
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- epoxy resin
- liquid epoxy
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- acid
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- FCTPXMGHGVCNMD-UHFFFAOYSA-N cyclohexene-1,3-dicarboxylic acid Chemical compound OC(=O)C1CCCC(C(O)=O)=C1 FCTPXMGHGVCNMD-UHFFFAOYSA-N 0.000 description 1
- KAAQPMPUQHKLLE-UHFFFAOYSA-N cyclohexene-1,4-dicarboxylic acid Chemical compound OC(=O)C1CCC(C(O)=O)=CC1 KAAQPMPUQHKLLE-UHFFFAOYSA-N 0.000 description 1
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- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 125000006038 hexenyl group Chemical group 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
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- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
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- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
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- CJRQAPHWCGEATR-UHFFFAOYSA-N n-methyl-n-prop-2-ynylbutan-2-amine Chemical compound CCC(C)N(C)CC#C CJRQAPHWCGEATR-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 150000007965 phenolic acids Chemical class 0.000 description 1
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- 239000005011 phenolic resin Substances 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 125000000286 phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004344 phenylpropyl group Chemical group 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
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- 238000004382 potting Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 125000004368 propenyl group Chemical group C(=CC)* 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
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- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical class [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
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- 239000004945 silicone rubber Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- 239000012756 surface treatment agent Substances 0.000 description 1
- 238000010558 suspension polymerization method Methods 0.000 description 1
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 1
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- 125000003944 tolyl group Chemical group 0.000 description 1
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- 125000000725 trifluoropropyl group Chemical group [H]C([H])(*)C([H])([H])C(F)(F)F 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
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Images
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83909—Post-treatment of the layer connector or bonding area
- H01L2224/83951—Forming additional members, e.g. for reinforcing, fillet sealant
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- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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Description
(A)全塩素含有量が1,500ppm以下であり、かつ100℃で50%エポキシ樹脂濃度における20時間での抽出水塩素が10ppm以下であるエポキシ樹脂、
(B)芳香族アミン系硬化剤を(A)液状樹脂のエポキシ当量/(B)芳香族アミン系硬化剤のアミン当量を0.7以上1.2以下とする量、
(C)硬化触媒として、安息香酸及びm−フタル酸から選ばれるカルボキシル基を有する化合物を、該化合物10質量部に対し(メタ)アクリル系単量体を10〜200質量部用いて重合させたポリマーでマイクロカプセル化した平均粒径が0.5〜10μmのマイクロカプセル型硬化促進剤であって、かつ該マイクロカプセル型硬化促進剤を1g秤量し、これをクレゾール30gに混合した後、30℃で放置し、溶出する上記硬化触媒をガスクロマトグラフィーで定量した場合、該マイクロカプセル型硬化促進剤から溶出する上記硬化触媒が30℃、15分で該マイクロカプセル型硬化促進剤中に含まれる全硬化触媒量の70質量%以上であるマイクロカプセル型硬化促進剤を(A)液状エポキシ樹脂と(B)芳香族アミン系硬化剤との総量100質量部に対し0.1〜50質量部、
(D)平均粒径が2〜20μmで最大粒径が75μm以下の無機質充填剤を(A)液状エポキシ樹脂と(B)芳香族アミン系硬化剤との総量100質量部に対し50〜1,200質量部
を必須成分としてなり、上記芳香族アミン系硬化剤は予めエポキシ樹脂と70〜150℃の温度範囲で1〜2時間溶融混合したものを配合することを特徴とする液状エポキシ樹脂組成物、及び上記液状エポキシ樹脂組成物の硬化物で封止した半導体装置を提供する。更に、上記液状エポキシ樹脂組成物の硬化物をアンダーフィル材として封止したフリップチップ型半導体装置を提供する。
HaR2 bSiO(4-a-b)/2 (3)
(但し、式中R2は置換又は非置換の一価の炭化水素基、aは0.01〜0.1、bは1.8〜2.2、1.81≦a+b≦2.3である。)
表1で示す成分を3本ロールで均一に混練することにより、10種の樹脂組成物を得た。これらの樹脂組成物を用いて、以下に示す試験を行った。その結果を表2に示す。
[粘度]
BH型回転粘度計を用いて4rpmの回転数で25℃における粘度を測定した。
[保存性]
25℃/60%RHにおいて樹脂組成物を保存し、上記測定条件で20%粘度上昇するのに要した時間の1/2の時間を保存性とした。
[ゲル化時間]
150℃のホットプレートに0.5ccの液状樹脂組成物を滴下し、スパチュラで撹拌して糸引きが切れるところでゲル化時間とした。
[Tg(ガラス転移温度)、CTE1(膨張係数)、CTE2(膨張係数)]
樹脂組成物を120℃/0.5時間+165℃/3時間で硬化させた5mm×5mm×15mmの硬化物試験片を用いて、TMA(熱機械分析装置)により毎分5℃の速さで昇温した時のTgを測定した。また、以下の温度範囲の膨張係数を測定した。
CTE1の温度範囲は50〜80℃、CTE2の温度範囲は200〜230℃である。
感光性ポリイミドをコートしたシリコンチップ上に上面の直径2mm、下面の直径5mm、高さ3mmの円錐台形状の樹脂組成物試験片を載せ、120℃で0.5時間、次いで165℃で3時間硬化させた。硬化後、得られた試験片の剪断接着力を測定し、初期値とした。更に、硬化させた試験片をPCT(121℃/2.1atm)で336時間吸湿させた後、接着力を測定した。いずれの場合も試験片の個数は5個で行い、その平均値を接着力として表記した。
[PCT剥離テスト]
ポリイミドコートした10mm×10mmのシリコンチップを30mm×30mmのFR−4基板に約100μmのスペーサを用いて設置し、生じた隙間に組成物を侵入させて120℃/0.5時間+165℃/3時間の条件で硬化させ、30℃/65%RH/192時間後に最高温度265℃に設定したIRリフローにて5回処理した後の剥離、更にPCT(121℃/2.1atm)の環境下に置き、336時間後の剥離をC−SAM(SONIX社製)で確認した。
[熱衝撃テスト]
ポリイミドコートした10mm×10mmのシリコンチップを30mm×30mmのFR−4基板に約100μmのスペーサを用いて設置し、生じた隙間に組成物を侵入させて120℃/0.5時間+165℃/3時間の条件で硬化させ、30℃/65%RH/192時間後に最高温度265℃に設定したIRリフローにて5回処理した後、−65℃/30分、150℃/30分を1サイクルとし、250サイクル、500サイクル、750サイクル、1,000サイクル後の剥離、クラックを確認した。
エピコート630H:下記式(5)で示される3官能型エポキシ樹脂(ジャパンエポキシレジン(株)製)
芳香族アミン系硬化剤B:テトラエチルジアミノフェニルメタン(日本化薬(株)製、C−300S)
m−フタル酸のマイクロカプセル:m−フタル酸を20質量%含有したメタクリル酸メチルの重合体,平均粒径が7μm,o−クレゾール中で30℃、15分間の処理でマイクロカプセルから溶出する触媒の量は89質量%
シランカップリング剤:γ−グリシドキシプロピルトリメトキシシラン(信越化学工業(株)製、KBM403)
球状シリカ:最大粒径53μm、平均粒径10μmの球状シリカ
2 バンプ
3 半導体チップ
4 アンダーフィル材
5 フィレット材
Claims (3)
- (A)全塩素含有量が1,500ppm以下であり、かつ100℃で50%エポキシ樹脂濃度における20時間での抽出水塩素が10ppm以下であるエポキシ樹脂、
(B)芳香族アミン系硬化剤を(A)液状樹脂のエポキシ当量/(B)芳香族アミン系硬化剤のアミン当量を0.7以上1.2以下とする量、
(C)硬化触媒として、安息香酸及びm−フタル酸から選ばれるカルボキシル基を有する化合物を、該化合物10質量部に対し(メタ)アクリル系単量体を10〜200質量部用いて重合させたポリマーでマイクロカプセル化した平均粒径が0.5〜10μmのマイクロカプセル型硬化促進剤であって、かつ該マイクロカプセル型硬化促進剤を1g秤量し、これをクレゾール30gに混合した後、30℃で放置し、溶出する上記硬化触媒をガスクロマトグラフィーで定量した場合、該マイクロカプセル型硬化促進剤から溶出する上記硬化触媒が30℃、15分で該マイクロカプセル型硬化促進剤中に含まれる全硬化触媒量の70質量%以上であるマイクロカプセル型硬化促進剤を(A)液状エポキシ樹脂と(B)芳香族アミン系硬化剤との総量100質量部に対し0.1〜50質量部、
(D)平均粒径が2〜20μmで最大粒径が75μm以下の無機質充填剤を(A)液状エポキシ樹脂と(B)芳香族アミン系硬化剤との総量100質量部に対し50〜1,200質量部
を必須成分としてなり、上記芳香族アミン系硬化剤は予めエポキシ樹脂と70〜150℃の温度範囲で1〜2時間溶融混合したものを配合することを特徴とする液状エポキシ樹脂組成物。 - 請求項1記載の液状エポキシ樹脂組成物の硬化物で封止された半導体装置。
- 請求項1記載の液状エポキシ樹脂組成物の硬化物をアンダーフィル材として封止したフリップチップ型半導体装置。
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