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EE200000047A - Elektriline seadis ja selle valmistamise meetod - Google Patents

Elektriline seadis ja selle valmistamise meetod

Info

Publication number
EE200000047A
EE200000047A EEP200000047A EEP200000047A EE200000047A EE 200000047 A EE200000047 A EE 200000047A EE P200000047 A EEP200000047 A EE P200000047A EE P200000047 A EEP200000047 A EE P200000047A EE 200000047 A EE200000047 A EE 200000047A
Authority
EE
Estonia
Prior art keywords
manufacture
electrical device
electrical
Prior art date
Application number
EEP200000047A
Other languages
English (en)
Inventor
Erik Mattisson Sven
Litwin Andrej
Original Assignee
Telefonaktiebolaget Lm Ericsson (Publ)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=20408227&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=EE200000047(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Telefonaktiebolaget Lm Ericsson (Publ) filed Critical Telefonaktiebolaget Lm Ericsson (Publ)
Publication of EE200000047A publication Critical patent/EE200000047A/et

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/354—Astable circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
    • H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1246—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising transistors used to provide a variable capacitance
    • H03B5/1253—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising transistors used to provide a variable capacitance the transistors being field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006—Functional aspects of oscillators
    • H03B2200/0098—Functional aspects of oscillators having a balanced output signal
EEP200000047A 1997-09-11 1998-09-01 Elektriline seadis ja selle valmistamise meetod EE200000047A (et)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE9703295A SE515783C2 (sv) 1997-09-11 1997-09-11 Elektriska anordningar jämte förfarande för deras tillverkning
PCT/SE1998/001554 WO1999013514A2 (en) 1997-09-11 1998-09-01 Electrical devices and a method of manufacturing the same

Publications (1)

Publication Number Publication Date
EE200000047A true EE200000047A (et) 2000-10-16

Family

ID=20408227

Family Applications (1)

Application Number Title Priority Date Filing Date
EEP200000047A EE200000047A (et) 1997-09-11 1998-09-01 Elektriline seadis ja selle valmistamise meetod

Country Status (13)

Country Link
US (1) US6100770A (et)
JP (3) JP2001516955A (et)
KR (1) KR100552916B1 (et)
CN (2) CN100557945C (et)
AR (1) AR017100A1 (et)
AU (1) AU741339B2 (et)
BR (1) BRPI9811639B1 (et)
EE (1) EE200000047A (et)
IL (3) IL159187A (et)
MY (1) MY115602A (et)
SE (1) SE515783C2 (et)
TR (1) TR200000511T2 (et)
WO (1) WO1999013514A2 (et)

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US9236466B1 (en) 2011-10-07 2016-01-12 Mie Fujitsu Semiconductor Limited Analog circuits having improved insulated gate transistors, and methods therefor
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JP6395191B2 (ja) * 2014-05-30 2018-09-26 インターチップ株式会社 集積ｍｏｓ型バリキャップおよびこれを有する電圧制御発振器、フィルター
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Also Published As

Publication number Publication date
IL159187A0 (en) 2004-06-01
SE9703295D0 (sv) 1997-09-11
US6100770A (en) 2000-08-08
JP2012028782A (ja) 2012-02-09
IL159398A0 (en) 2004-06-01
BR9811639A (pt) 2000-08-08
WO1999013514A2 (en) 1999-03-18
CN1508966A (zh) 2004-06-30
CN100557945C (zh) 2009-11-04
MY115602A (en) 2003-07-31
IL134416A (en) 2004-08-31
CN100342553C (zh) 2007-10-10
AU9192498A (en) 1999-03-29
AR017100A1 (es) 2001-08-22
TR200000511T2 (tr) 2000-06-21
KR100552916B1 (ko) 2006-02-22
JP5848297B2 (ja) 2016-01-27
KR20010023918A (ko) 2001-03-26
JP2001516955A (ja) 2001-10-02
AU741339B2 (en) 2001-11-29
IL134416A0 (en) 2001-04-30
SE9703295L (sv) 1999-03-12
WO1999013514A3 (en) 1999-06-24
BRPI9811639B1 (pt) 2016-08-02
CN1270704A (zh) 2000-10-18
IL159187A (en) 2005-06-19
JP2014039043A (ja) 2014-02-27
SE515783C2 (sv) 2001-10-08

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