[go: up one dir, main page]

TR200000511T2 - Elektrikli cihazlar ve bunları imal etmek için bir yöntem. - Google Patents

Elektrikli cihazlar ve bunları imal etmek için bir yöntem.

Info

Publication number
TR200000511T2
TR200000511T2 TR2000/00511T TR200000511T TR200000511T2 TR 200000511 T2 TR200000511 T2 TR 200000511T2 TR 2000/00511 T TR2000/00511 T TR 2000/00511T TR 200000511 T TR200000511 T TR 200000511T TR 200000511 T2 TR200000511 T2 TR 200000511T2
Authority
TR
Turkey
Prior art keywords
zone
manufacturing
conductive element
insulation layer
substantially conductive
Prior art date
Application number
TR2000/00511T
Other languages
English (en)
Inventor
Litwin Andrej
Erik Mattisson Sven
Original Assignee
Telefonaktiebolaget Lm Ericsson (Publ)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=20408227&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TR200000511(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Telefonaktiebolaget Lm Ericsson (Publ) filed Critical Telefonaktiebolaget Lm Ericsson (Publ)
Publication of TR200000511T2 publication Critical patent/TR200000511T2/tr

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/354—Astable circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
    • H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1246—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising transistors used to provide a variable capacitance
    • H03B5/1253—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising transistors used to provide a variable capacitance the transistors being field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006—Functional aspects of oscillators
    • H03B2200/0098—Functional aspects of oscillators having a balanced output signal

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)

Abstract

Yari-iletken bir malzemeden birinci bölge ve birinci bölgede olusturulmus, bir ayirma bölgesiyle birbirinden ayrilmis yari iletken malzemeden ikinci ve üçüncü bölge ve birinci bölge üzerinde en azindan ayirma bölgesine tekabül eden bir bölgede olusturulmus bir elektriksel yalitim katmani ve yalitim katmani üzerinde en azindan ayirma bölgesine tekabül eden bir bölgede olusturulmus büyük ölçüde iletken bir eleman ve büyük ölçüde iletken elemana baglanmis birinci elektrot ve ikinci ve üçüncü bölgelere baglanmis ikinci bir elektrot ihtiva eden voltaj bagimli kapasitansa haiz bir elektriksel cihaz temin edilmistir. Yalitim katmani, büyük ölçüde iletken elemanla, birinci, ikinci ve üçüncü bölgeler arasinda elektriksel yalitim temin eder. Cihazi imal etmek için bir yöntem de temin edilmistir.
TR2000/00511T 1997-09-11 1998-09-01 Elektrikli cihazlar ve bunları imal etmek için bir yöntem. TR200000511T2 (tr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9703295A SE515783C2 (sv) 1997-09-11 1997-09-11 Elektriska anordningar jämte förfarande för deras tillverkning

Publications (1)

Publication Number Publication Date
TR200000511T2 true TR200000511T2 (tr) 2000-06-21

Family

ID=20408227

Family Applications (1)

Application Number Title Priority Date Filing Date
TR2000/00511T TR200000511T2 (tr) 1997-09-11 1998-09-01 Elektrikli cihazlar ve bunları imal etmek için bir yöntem.

Country Status (13)

Country Link
US (1) US6100770A (tr)
JP (3) JP2001516955A (tr)
KR (1) KR100552916B1 (tr)
CN (2) CN100342553C (tr)
AR (1) AR017100A1 (tr)
AU (1) AU741339B2 (tr)
BR (1) BRPI9811639B1 (tr)
EE (1) EE200000047A (tr)
IL (3) IL159187A (tr)
MY (1) MY115602A (tr)
SE (1) SE515783C2 (tr)
TR (1) TR200000511T2 (tr)
WO (1) WO1999013514A2 (tr)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6320474B1 (en) * 1998-12-28 2001-11-20 Interchip Corporation MOS-type capacitor and integrated circuit VCO using same
US6369671B1 (en) * 1999-03-30 2002-04-09 International Business Machines Corporation Voltage controlled transmission line with real-time adaptive control
US6271733B1 (en) * 1999-12-13 2001-08-07 Agere Systems Guardian Corp. Integrated oscillator circuit with a memory based frequency control circuit and associated methods
US6407412B1 (en) * 2000-03-10 2002-06-18 Pmc-Sierra Inc. MOS varactor structure with engineered voltage control range
US7000119B1 (en) 2000-04-20 2006-02-14 Realnetworks, Inc. Instruction/data protection employing derived obscuring instruction/data
US6504443B1 (en) 2000-05-17 2003-01-07 Nec America, Inc., Common anode varactor tuned LC circuit
US6642607B2 (en) * 2001-02-05 2003-11-04 Matsushita Electric Industrial Co., Ltd. Semiconductor device
US6621362B2 (en) 2001-05-18 2003-09-16 Broadcom Corporation Varactor based differential VCO band switching
DE10126328A1 (de) * 2001-05-30 2002-12-12 Infineon Technologies Ag Integrierte, abstimmbare Kapazität
KR100530739B1 (ko) * 2001-06-28 2005-11-28 한국전자통신연구원 가변 수동소자 및 그 제조방법
US7235862B2 (en) * 2001-07-10 2007-06-26 National Semiconductor Corporation Gate-enhanced junction varactor
DE10139396A1 (de) * 2001-08-10 2003-01-16 Infineon Technologies Ag Integrierte Halbleiterschaltung mit einem Varaktor
US6667539B2 (en) 2001-11-08 2003-12-23 International Business Machines Corporation Method to increase the tuning voltage range of MOS varactors
US6521506B1 (en) * 2001-12-13 2003-02-18 International Business Machines Corporation Varactors for CMOS and BiCMOS technologies
US6828654B2 (en) * 2001-12-27 2004-12-07 Broadcom Corporation Thick oxide P-gate NMOS capacitor for use in a phase-locked loop circuit and method of making same
US7169679B2 (en) * 2002-01-07 2007-01-30 Honeywell International Inc. Varactor with improved tuning range
US7081663B2 (en) 2002-01-18 2006-07-25 National Semiconductor Corporation Gate-enhanced junction varactor with gradual capacitance variation
DE10206375A1 (de) * 2002-02-15 2003-06-26 Infineon Technologies Ag Integrierte, abstimmbare Kapazität
JP4153233B2 (ja) * 2002-04-18 2008-09-24 富士通株式会社 ｐｎバラクタ
DE10222764B4 (de) * 2002-05-15 2011-06-01 Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik Halbleitervaraktor und damit aufgebauter Oszillator
US6608362B1 (en) 2002-08-20 2003-08-19 Chartered Semiconductor Manufacturing Ltd. Method and device for reducing capacitive and magnetic effects from a substrate by using a schottky diode under passive components
KR100460273B1 (ko) * 2003-03-25 2004-12-08 매그나칩 반도체 유한회사 모스 바랙터의 제조방법
JP4046634B2 (ja) 2003-04-08 2008-02-13 Ｎｅｃエレクトロニクス株式会社 電圧制御型容量素子及び半導体集積回路
JP2004311858A (ja) * 2003-04-10 2004-11-04 Nec Electronics Corp 半導体集積回路装置
US6825089B1 (en) * 2003-06-04 2004-11-30 Agere Systems Inc. Increased quality factor of a varactor in an integrated circuit via a high conductive region in a well
JP2005019487A (ja) 2003-06-24 2005-01-20 Nippon Precision Circuits Inc Ｍｏｓ型可変容量素子及び電圧制御発振回路
US7075379B2 (en) * 2003-07-23 2006-07-11 Agency For Science, Technology And Research Low supply-sensitive and wide tuning-range CMOS LC-tank voltage-controlled oscillator monolithic integrated circuit
TWI373925B (en) * 2004-02-10 2012-10-01 Tridev Res L L C Tunable resonant circuit, tunable voltage controlled oscillator circuit, tunable low noise amplifier circuit and method of tuning a resonant circuit
US7038527B2 (en) * 2004-02-25 2006-05-02 Analog Devices, Inc. MOS varactor for LC VCOs
SE527215C2 (sv) * 2004-03-23 2006-01-24 Infineon Technologies Ag Integrerad omkopplingsanordning
CN100353568C (zh) * 2004-04-07 2007-12-05 联华电子股份有限公司 可变电容器与差动式可变电容器
JP4857531B2 (ja) * 2004-07-08 2012-01-18 三菱電機株式会社 半導体装置
JP2006066897A (ja) * 2004-07-30 2006-03-09 Semiconductor Energy Lab Co Ltd 容量素子及び半導体装置
EP1633005A1 (en) * 2004-09-03 2006-03-08 Infineon Technologies AG Monolithically integrated capacitor
WO2006031777A2 (en) * 2004-09-10 2006-03-23 University Of Florida Research Foundation, Inc. Capacitive circuit element and method of using the same
US20060125012A1 (en) * 2004-12-09 2006-06-15 Honeywell International Inc. Varactor
US7323948B2 (en) * 2005-08-23 2008-01-29 International Business Machines Corporation Vertical LC tank device
DE102005061683B4 (de) * 2005-12-21 2011-12-08 Forschungsverbund Berlin E.V. Vorrichtung, Tastkopf und Verfahren zur galvanisch entkoppelten Übertragung eines Messsignals
US20080149983A1 (en) * 2006-12-20 2008-06-26 International Business Machines Corporation Metal-oxide-semiconductor (mos) varactors and methods of forming mos varactors
US7825441B2 (en) 2007-06-25 2010-11-02 International Business Machines Corporation Junction field effect transistor with a hyperabrupt junction
US8130051B2 (en) * 2008-02-06 2012-03-06 Broadcom Corporation Method and system for varactor linearization
US8008748B2 (en) * 2008-12-23 2011-08-30 International Business Machines Corporation Deep trench varactors
CN101924142B (zh) * 2009-06-17 2011-09-14 中国科学院微电子研究所 一种GaAs肖特基变容二极管及其制作方法
US9236466B1 (en) 2011-10-07 2016-01-12 Mie Fujitsu Semiconductor Limited Analog circuits having improved insulated gate transistors, and methods therefor
US8779861B2 (en) * 2011-10-19 2014-07-15 Newport Media, Inc. Multi-phase voltage controlled oscillator using capacitance degenerated single ended transconductance stage and inductance/capacitance load
US9299699B2 (en) 2013-03-13 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-gate and complementary varactors in FinFET process
US9847433B2 (en) * 2014-05-30 2017-12-19 Interchip Corporation Integrated MOS varicap, and voltage controlled oscillator and filter having same
WO2016105424A1 (en) * 2014-12-24 2016-06-30 Intel Corporation Cmos varactor with increased tuning range
US9837555B2 (en) * 2015-04-15 2017-12-05 Futurewei Technologies, Inc. Apparatus and method for a low loss coupling capacitor
KR102345676B1 (ko) * 2015-09-09 2021-12-31 에스케이하이닉스 주식회사 모스 버렉터 및 이를 포함하는 반도체 집적소자
US10608123B2 (en) * 2017-05-08 2020-03-31 Qualcomm Incorporated Metal oxide semiconductor varactor quality factor enhancement
KR20200058192A (ko) 2018-11-19 2020-05-27 이용재 압력 밸런스 기능을 갖는 가스용기 밸브
CN113164811B (zh) 2018-11-21 2024-05-14 华山国际贸易有限公司 多面体玩具
US11515434B2 (en) * 2019-09-17 2022-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Decoupling capacitor and method of making the same
WO2021212362A1 (en) * 2020-04-22 2021-10-28 Yangtze Memory Technologies Co., Ltd. Variable capacitor

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3878482A (en) * 1973-10-04 1975-04-15 Gen Electric Wide-band, voltage controlled oscillator utilizing complimentary metal oxide semiconductor integrated circuits and a constant current MOS-FET field effect transistor
US3904988A (en) * 1974-09-11 1975-09-09 Motorola Inc CMOS voltage controlled oscillator
JPS53139959A (en) * 1977-05-13 1978-12-06 Hitachi Ltd Amplifying circuit
JPS5530862A (en) * 1978-08-25 1980-03-04 Seiko Instr & Electronics Ltd Method of making semiconductor device
DE2915134A1 (de) * 1979-04-12 1980-10-16 Siemens Ag Steuerbare oszillatoranordnung
JPS57113264A (en) * 1980-12-29 1982-07-14 Fujitsu Ltd Manufacture of mis type capacitor
GB2104725B (en) * 1981-07-17 1986-04-09 Clarion Co Ltd Variable capacitance device
US4450416A (en) * 1981-08-17 1984-05-22 General Electric Company Voltage controlled oscillator
JPS5923569A (ja) * 1982-07-29 1984-02-07 Matsushita Electronics Corp 半導体可変容量素子
JPS59104180A (ja) * 1982-12-06 1984-06-15 Clarion Co Ltd 可変容量ダイオ−ド
JPS59154077A (ja) * 1983-02-23 1984-09-03 Clarion Co Ltd 可変容量素子
JPS61292358A (ja) * 1985-06-19 1986-12-23 Fujitsu Ltd Ｍｉｓ型電界効果トランジスタの製造方法
JPS62156853A (ja) * 1985-12-28 1987-07-11 Toshiba Corp Ｍｏｓ型可変容量回路
US4692717A (en) * 1986-03-14 1987-09-08 Western Digital Corporation Voltage controlled oscillator with high speed current switching
JPS6461070A (en) * 1987-09-01 1989-03-08 Nec Corp Semiconductor device
US4887053A (en) * 1987-11-27 1989-12-12 American Telephone And Telegraph Company High frequency VLSI oscillator
US4853655A (en) * 1987-11-27 1989-08-01 American Telephone And Telegraph Company, At&T Bell Laboratories High frequency CMOS oscillator
JPH01146351A (ja) * 1987-12-02 1989-06-08 Mitsubishi Electric Corp 半導体装置
US5107227A (en) * 1988-02-08 1992-04-21 Magellan Corporation (Australia) Pty. Ltd. Integratable phase-locked loop
JPH0294914A (ja) * 1988-09-30 1990-04-05 Nec Corp 電圧制御型発振器
US4866567A (en) * 1989-01-06 1989-09-12 Ncr Corporation High frequency integrated circuit channel capacitor
JP2786467B2 (ja) * 1989-03-15 1998-08-13 沖電気工業株式会社 Ｃｍｏｓ半導体集積回路
JPH03278579A (ja) * 1990-03-28 1991-12-10 Nec Corp 半導体装置
US5045966A (en) * 1990-09-17 1991-09-03 Micrel Semiconductor Method for forming capacitor using FET process and structure formed by same
JPH0477266U (tr) * 1990-11-16 1992-07-06
US5061907A (en) * 1991-01-17 1991-10-29 National Semiconductor Corporation High frequency CMOS VCO with gain constant and duty cycle compensation
FR2679702A1 (fr) * 1991-07-23 1993-01-29 Thomson Csf Element semi-conducteur a capacite variable pour circuit integre en micro-ondes et circuit integre equipe d'au moins un tel element.
US5173835A (en) * 1991-10-15 1992-12-22 Motorola, Inc. Voltage variable capacitor
US5175512A (en) * 1992-02-28 1992-12-29 Avasem Corporation High speed, power supply independent CMOS voltage controlled ring oscillator with level shifting circuit
US5218325A (en) * 1992-03-31 1993-06-08 Motorola, Inc. Low noise oscillator
KR950003233B1 (ko) * 1992-05-30 1995-04-06 삼성전자 주식회사 이중층 실리사이드 구조를 갖는 반도체 장치 및 그 제조방법
US5300898A (en) * 1992-07-29 1994-04-05 Ncr Corporation High speed current/voltage controlled ring oscillator circuit
JP2951128B2 (ja) * 1992-10-20 1999-09-20 三洋電機株式会社 電圧制御型発振回路
US5365204A (en) * 1993-10-29 1994-11-15 International Business Machines Corporation CMOS voltage controlled ring oscillator
JPH07176952A (ja) * 1993-12-20 1995-07-14 Sony Corp 発振器
JPH07162231A (ja) * 1993-12-08 1995-06-23 Nec Corp 発振回路
US5396195A (en) * 1993-12-13 1995-03-07 At&T Corp. Low-power-dissipation CMOS oscillator circuits
JP3215258B2 (ja) * 1994-04-05 2001-10-02 富士通株式会社 Ｐｌｌ集積回路および調整方法
US5483207A (en) * 1994-12-30 1996-01-09 At&T Corp. Adiabatic MOS oscillators
JPH08102526A (ja) * 1995-07-14 1996-04-16 Rohm Co Ltd Ｃｍｏｓ半導体装置
DE19631389A1 (de) * 1995-08-29 1997-03-06 Hewlett Packard Co Monolithischer spannungsvariabler Kondensator
JPH0993124A (ja) * 1995-09-27 1997-04-04 Ando Electric Co Ltd 広帯域ｖｃｏ回路
US5629652A (en) * 1996-05-09 1997-05-13 Analog Devices Band-switchable, low-noise voltage controlled oscillator (VCO) for use with low-q resonator elements
US5914513A (en) * 1997-06-23 1999-06-22 The Board Of Trustees Of The University Of Illinois Electronically tunable capacitor

Also Published As

Publication number Publication date
IL134416A0 (en) 2001-04-30
IL159187A (en) 2005-06-19
US6100770A (en) 2000-08-08
KR20010023918A (ko) 2001-03-26
BR9811639A (pt) 2000-08-08
JP2014039043A (ja) 2014-02-27
SE9703295L (sv) 1999-03-12
CN1270704A (zh) 2000-10-18
KR100552916B1 (ko) 2006-02-22
SE9703295D0 (sv) 1997-09-11
CN100557945C (zh) 2009-11-04
JP2012028782A (ja) 2012-02-09
SE515783C2 (sv) 2001-10-08
AU741339B2 (en) 2001-11-29
AU9192498A (en) 1999-03-29
CN1508966A (zh) 2004-06-30
IL134416A (en) 2004-08-31
JP5848297B2 (ja) 2016-01-27
JP2001516955A (ja) 2001-10-02
AR017100A1 (es) 2001-08-22
IL159398A0 (en) 2004-06-01
MY115602A (en) 2003-07-31
WO1999013514A3 (en) 1999-06-24
WO1999013514A2 (en) 1999-03-18
EE200000047A (et) 2000-10-16
CN100342553C (zh) 2007-10-10
BRPI9811639B1 (pt) 2016-08-02
IL159187A0 (en) 2004-06-01

Similar Documents

Publication Publication Date Title
TR200000511T2 (tr) Elektrikli cihazlar ve bunları imal etmek için bir yöntem.
TW337035B (en) Semiconductor device and method of manufacturing the same
WO1997023897A3 (de) Optoelektronisches sensor-bauelement
TW358992B (en) Semiconductor device and method of fabricating the same
TW340261B (en) Semiconductor device and the manufacturing method
EP1033757A3 (en) Insulated gate bipolar transistor
KR920015496A (ko) 반도체장치
WO2005017967A3 (en) Nanotube device structure and methods of fabrication
TW200741968A (en) Butted contact structure and method for forming the same
SG136795A1 (en) Semiconductor device and manufacturing method thereof
KR890702161A (ko) 집적회로 장치 및 그 제조방법
EP1329956A3 (en) Semiconductor device and its manufacturing method
WO2001030437A8 (en) Patient-shielding and coil system
EP0510604A3 (en) Semiconductor device and method of manufacturing the same
WO2001099148A3 (en) Electrical fuses employing reverse biasing to enhance programming
KR920704344A (ko) 반도체 플레이트(p)상호 접속 방법 및 장치
TW358990B (en) Lead frame, semiconductor package having the same and method for manufacturing the same
WO2003098700A3 (en) Resurf super-junction devices having trenches
KR980005987A (ko) 박막 캐피시터를 갖는 반도체 디바이스
WO2002009178A3 (en) Semiconductor device and a process for forming the same
ATE240581T1 (de) Folie für einen folienkondensator und folienkondensator
KR940020539A (ko) 저 인덕턴스 반도체 패키지(Low inductance semiconductor package)
KR960039426A (ko) 전계효과에 의해 제어가능한 반도체소자
EP1981087A3 (en) Electrical device comprising a voltage dependant capacitance and method for manufacturing the same
TW357433B (en) Semiconductor and manufacturing process