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DE69633203D1 - Halbleiterlaser-Vorrichtungen - Google Patents

Halbleiterlaser-Vorrichtungen

Info

Publication number
DE69633203D1
DE69633203D1 DE69633203T DE69633203T DE69633203D1 DE 69633203 D1 DE69633203 D1 DE 69633203D1 DE 69633203 T DE69633203 T DE 69633203T DE 69633203 T DE69633203 T DE 69633203T DE 69633203 D1 DE69633203 D1 DE 69633203D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser devices
devices
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69633203T
Other languages
English (en)
Other versions
DE69633203T2 (de
Inventor
Toshiaki Tanaka
Shigeru Aoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Opnext Japan Inc
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE69633203D1 publication Critical patent/DE69633203D1/de
Publication of DE69633203T2 publication Critical patent/DE69633203T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
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    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
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    • H01L21/02367—Substrates
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    • H01L21/02381—Silicon, silicon germanium, germanium
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    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02458—Nitrides
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    • H01S5/227—Buried mesa structure ; Striped active layer
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    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
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    • H01S2304/00—Special growth methods for semiconductor lasers
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    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
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    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • Geometry (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Semiconductor Lasers (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69633203T 1995-09-18 1996-09-17 Halbleiterlaservorrichtungen Expired - Lifetime DE69633203T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP23814295 1995-09-18
JP23814295 1995-09-18
JP23165896 1996-09-02
JP23165896 1996-09-02

Publications (2)

Publication Number Publication Date
DE69633203D1 true DE69633203D1 (de) 2004-09-23
DE69633203T2 DE69633203T2 (de) 2005-09-01

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US20010038655A1 (en) 2001-11-08
JP3830051B2 (ja) 2006-10-04
EP1081818A2 (de) 2001-03-07
DE69633203T2 (de) 2005-09-01
DE69622277D1 (de) 2002-08-14
EP1081818B1 (de) 2004-08-18
AU6946196A (en) 1997-04-09
WO1997011518A1 (fr) 1997-03-27
US6459712B2 (en) 2002-10-01
DE69622277T2 (de) 2003-03-27
EP0852416A4 (de) 1999-04-07
EP0852416A1 (de) 1998-07-08
EP0852416B1 (de) 2002-07-10
US6377596B1 (en) 2002-04-23

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