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DE69517044D1 - Halbleiterlaservorrichtung - Google Patents

Halbleiterlaservorrichtung

Info

Publication number
DE69517044D1
DE69517044D1 DE69517044T DE69517044T DE69517044D1 DE 69517044 D1 DE69517044 D1 DE 69517044D1 DE 69517044 T DE69517044 T DE 69517044T DE 69517044 T DE69517044 T DE 69517044T DE 69517044 D1 DE69517044 D1 DE 69517044D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69517044T
Other languages
English (en)
Other versions
DE69517044T2 (de
Inventor
A Okubo
Y Yamada
T Fujimoto
S Okada
Y Naito
K Muro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Chemicals Inc
Original Assignee
Mitsui Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Chemicals Inc filed Critical Mitsui Chemicals Inc
Application granted granted Critical
Publication of DE69517044D1 publication Critical patent/DE69517044D1/de
Publication of DE69517044T2 publication Critical patent/DE69517044T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2238—Buried stripe structure with a terraced structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/204—Strongly index guided structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H01S5/222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties having a refractive index lower than that of the cladding layers or outer guiding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/60—Receivers
    • H04B10/66—Non-coherent receivers, e.g. using direct detection
    • H04B10/67—Optical arrangements in the receiver

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE69517044T 1994-10-18 1995-10-16 Halbleiterlaservorrichtung Expired - Lifetime DE69517044T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP25243194 1994-10-18
JP32876694 1994-12-28
PCT/JP1995/002118 WO1996012328A1 (fr) 1994-10-18 1995-10-16 Laser a semi-conducteur

Publications (2)

Publication Number Publication Date
DE69517044D1 true DE69517044D1 (de) 2000-06-21
DE69517044T2 DE69517044T2 (de) 2000-10-26

Family

ID=26540714

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69517044T Expired - Lifetime DE69517044T2 (de) 1994-10-18 1995-10-16 Halbleiterlaservorrichtung

Country Status (7)

Country Link
US (1) US6118799A (de)
EP (1) EP0788203B1 (de)
JP (1) JP3576560B2 (de)
KR (1) KR100309952B1 (de)
CA (1) CA2203117C (de)
DE (1) DE69517044T2 (de)
WO (1) WO1996012328A1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2246975A1 (en) 1997-09-18 1999-03-18 Mitsui Chemicals, Incorporated Method of fabricating semiconductor laser
JP3859839B2 (ja) * 1997-09-30 2006-12-20 富士フイルムホールディングス株式会社 屈折率導波型半導体レーザ装置
JPH11163458A (ja) * 1997-11-26 1999-06-18 Mitsui Chem Inc 半導体レーザ装置
JPH11243259A (ja) * 1997-12-25 1999-09-07 Denso Corp 半導体レーザおよび半導体レーザの駆動方法
US6487225B2 (en) * 1998-02-04 2002-11-26 Mitsui Chemicals Inc. Surface-emitting laser device
US6577658B1 (en) 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
JP2001210910A (ja) * 1999-11-17 2001-08-03 Mitsubishi Electric Corp 半導体レーザ
US6597717B1 (en) * 1999-11-19 2003-07-22 Xerox Corporation Structure and method for index-guided, inner stripe laser diode structure
JP2002314203A (ja) * 2001-04-12 2002-10-25 Pioneer Electronic Corp ３族窒化物半導体レーザ及びその製造方法
JP3797151B2 (ja) * 2001-07-05 2006-07-12 ソニー株式会社 レーザダイオード、光学ピックアップ装置、光ディスク装置および光通信装置
AU2003227230A1 (en) * 2002-04-04 2003-10-20 Sharp Kabushiki Kaisha Semiconductor laser device
EP1492209B1 (de) 2003-06-27 2008-01-09 Nichia Corporation Nitrid-Halbleiterlaser mit Stromsperrschichten und Herstellungsverfahren hierfür
EP2015412B1 (de) * 2007-07-06 2022-03-09 Lumentum Operations LLC Halbleiter-Laser mit schmaler Strahldivergenz.
US8437375B2 (en) * 2008-10-31 2013-05-07 Optoenergy, Inc Semiconductor laser element
WO2018003551A1 (ja) * 2016-06-30 2018-01-04 パナソニックＩｐマネジメント株式会社 半導体レーザ装置、半導体レーザモジュール及び溶接用レーザ光源システム

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55123191A (en) * 1979-03-16 1980-09-22 Fujitsu Ltd Semiconductor light emitting device
EP0014588B1 (de) * 1979-02-13 1983-12-14 Fujitsu Limited Lichtemittierende Halbleitervorrichtung
JPS6014482A (ja) * 1983-07-04 1985-01-25 Toshiba Corp 半導体レ−ザ装置
JPH0636456B2 (ja) * 1984-05-18 1994-05-11 シャープ株式会社 半導体レ−ザ素子
JPS6232678A (ja) * 1985-08-05 1987-02-12 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS62188393A (ja) * 1986-02-14 1987-08-17 Nec Corp 半導体レ−ザ
JPH01175284A (ja) * 1987-12-29 1989-07-11 Sharp Corp 半導体レーザ素子
JPH069282B2 (ja) * 1988-09-09 1994-02-02 株式会社東芝 半導体レーザ装置
US5149318A (en) * 1990-03-14 1992-09-22 Minnesota Mining And Manufacturing Company Quick-changeover blood handling apparatus
JPH03276785A (ja) * 1990-03-27 1991-12-06 Sony Corp 半導体レーザ
JPH04180684A (ja) * 1990-11-15 1992-06-26 Nec Corp 半導体レーザ
JPH0563293A (ja) * 1991-08-30 1993-03-12 Sharp Corp ＡｌＧａＩｎＰ系半導体レーザ素子およびその製造方法
JP2912482B2 (ja) * 1991-08-30 1999-06-28 シャープ株式会社 半導体レーザ
WO1993016513A1 (fr) * 1992-02-05 1993-08-19 Mitsui Petrochemical Industries, Ltd. Element laser a semi-conducteur et laser fabrique au moyen d'un tel element
US5467364A (en) * 1992-02-05 1995-11-14 Mitsui Petrochemical Industries, Ltd. Semiconductor laser element and laser device using the same element
EP0575684A1 (de) * 1992-06-22 1993-12-29 International Business Machines Corporation Laserdiode mit entkoppelter optischer und elektronischer Begrenzung
US5369658A (en) * 1992-06-26 1994-11-29 Rohm Co., Ltd. Semiconductor laser
JPH0636456A (ja) * 1992-07-15 1994-02-10 Sony Corp 画像データ再生装置
JPH0697572A (ja) * 1992-09-14 1994-04-08 Hitachi Ltd 半導体レーザ素子
JPH06181362A (ja) * 1992-12-14 1994-06-28 Canon Inc 半導体装置及び半導体装置の製造方法
US5301202A (en) * 1993-02-25 1994-04-05 International Business Machines, Corporation Semiconductor ridge waveguide laser with asymmetrical cladding

Also Published As

Publication number Publication date
DE69517044T2 (de) 2000-10-26
CA2203117C (en) 2001-12-25
KR970707620A (ko) 1997-12-01
EP0788203A4 (de) 1997-12-10
WO1996012328A1 (fr) 1996-04-25
KR100309952B1 (ko) 2001-12-17
EP0788203A1 (de) 1997-08-06
US6118799A (en) 2000-09-12
CA2203117A1 (en) 1996-04-25
EP0788203B1 (de) 2000-05-17
JP3576560B2 (ja) 2004-10-13

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