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DE69328348D1 - Stromerfassungsschaltung - Google Patents

Stromerfassungsschaltung

Info

Publication number
DE69328348D1
DE69328348D1 DE69328348T DE69328348T DE69328348D1 DE 69328348 D1 DE69328348 D1 DE 69328348D1 DE 69328348 T DE69328348 T DE 69328348T DE 69328348 T DE69328348 T DE 69328348T DE 69328348 D1 DE69328348 D1 DE 69328348D1
Authority
DE
Germany
Prior art keywords
detection circuit
current detection
current
circuit
detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69328348T
Other languages
English (en)
Other versions
DE69328348T2 (de
Inventor
Satoru Tanoi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lapis Semiconductor Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP35974292A external-priority patent/JP3222235B2/ja
Priority claimed from JP34964592A external-priority patent/JP3176458B2/ja
Priority claimed from JP4349646A external-priority patent/JP3048774B2/ja
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Publication of DE69328348D1 publication Critical patent/DE69328348D1/de
Application granted granted Critical
Publication of DE69328348T2 publication Critical patent/DE69328348T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/145—Indicating the presence of current or voltage
    • G01R19/15—Indicating the presence of current
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/561—Multilevel memory cell aspects
    • G11C2211/5614—Multilevel memory cell comprising negative resistance, quantum tunneling or resonance tunneling elements

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Amplifiers (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
DE69328348T 1992-12-28 1993-12-27 Stromerfassungsschaltung Expired - Lifetime DE69328348T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP35974292A JP3222235B2 (ja) 1992-12-28 1992-12-28 センス回路
JP34964592A JP3176458B2 (ja) 1992-12-28 1992-12-28 負性抵抗回路及びこれを用いたシュミットトリガ回路
JP4349646A JP3048774B2 (ja) 1992-12-28 1992-12-28 センス回路及びこれを用いたメモリ回路

Publications (2)

Publication Number Publication Date
DE69328348D1 true DE69328348D1 (de) 2000-05-18
DE69328348T2 DE69328348T2 (de) 2000-12-28

Family

ID=27341317

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69328348T Expired - Lifetime DE69328348T2 (de) 1992-12-28 1993-12-27 Stromerfassungsschaltung

Country Status (4)

Country Link
US (6) US5504442A (de)
EP (1) EP0607614B1 (de)
KR (3) KR100304813B1 (de)
DE (1) DE69328348T2 (de)

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JPH0918329A (ja) * 1995-07-03 1997-01-17 Oki Electric Ind Co Ltd 可変レベルシフタ及びマルチプライヤ
US6104229A (en) * 1996-05-02 2000-08-15 Integrated Device Technology, Inc. High voltage tolerable input buffer and method for operating same
JPH103796A (ja) * 1996-06-14 1998-01-06 Nec Corp センスアンプ回路
KR100267012B1 (ko) * 1997-12-30 2000-10-02 윤종용 반도체 메모리 장치의 감지 증폭기
KR100702810B1 (ko) * 1998-06-09 2007-04-03 코닌클리케 필립스 일렉트로닉스 엔.브이. 전류 측정 장치와 전류 측정 장치를 사용하는 전화 단말기
JP3609260B2 (ja) * 1998-07-17 2005-01-12 沖電気工業株式会社 半導体装置の増幅回路
US5999454A (en) * 1998-08-19 1999-12-07 Lucent Technologies, Inc. Sense amplifier for flash memory
US6111425A (en) * 1998-10-15 2000-08-29 International Business Machines Corporation Very low power logic circuit family with enhanced noise immunity
US6433590B1 (en) 1998-12-18 2002-08-13 Samsung Electronics Co., Ltd. Current mirror type sense amplifier circuits for semiconductor memory devices and methods of operating same
WO2000041308A2 (en) * 1999-01-06 2000-07-13 Raytheon Company System for quantizing an analog signal
US7259479B1 (en) * 1999-02-18 2007-08-21 Robertshaw Controls Company Transformerless power supply, dual positive or dual negative supplies
JP3734664B2 (ja) * 2000-02-24 2006-01-11 株式会社日立製作所 表示デバイス
DE10164779B4 (de) * 2000-10-02 2011-04-28 Fujitsu Ltd., Kawasaki Empfänger, Hybridschaltung, Ansteuerschaltung und Signalübertragungssystem zur bidirektionalen Signalübertragung zum gleichzeitigen Ausführen einer derartigen Signalübertragung in beiden Richtungen
FR2820747B1 (fr) * 2001-02-15 2005-10-07 Rhodia Chimie Sa Composition a base de polysaccharide non-ionique pour le soin des articles en fibres textiles
US6430078B1 (en) * 2001-07-03 2002-08-06 Agilent Technologies, Inc. Low-voltage digital ROM circuit and method
US6605973B1 (en) * 2002-03-15 2003-08-12 Taiwan Semiconductor Manufacturing Company High voltage discharge circuit
GB2405701A (en) * 2003-09-03 2005-03-09 Seiko Epson Corp Differential current sensing circuit
US7696804B2 (en) * 2007-03-31 2010-04-13 Sandisk 3D Llc Method for incorporating transistor snap-back protection in a level shifter circuit
US7696805B2 (en) * 2007-03-31 2010-04-13 Sandisk 3D Llc Level shifter circuit incorporating transistor snap-back protection
US7522024B2 (en) * 2007-04-06 2009-04-21 Mediatek Inc. Negative gm circuit, a filter and low noise amplifier including such a filter
US8022745B1 (en) * 2007-09-17 2011-09-20 Rf Micro Devices, Inc. High voltage switch using multiple cascode circuits
US8698540B2 (en) * 2008-04-03 2014-04-15 Cognipower, Llc DC common mode level shifter
US8134300B2 (en) 2008-08-08 2012-03-13 Mag Instrument, Inc. Portable lighting devices
US8289796B2 (en) 2010-01-26 2012-10-16 Micron Technology, Inc. Sense amplifier having loop gain control
US8705304B2 (en) 2010-03-26 2014-04-22 Micron Technology, Inc. Current mode sense amplifier with passive load
CN102213971B (zh) * 2010-04-09 2015-09-09 赛恩倍吉科技顾问（深圳）有限公司 时序控制电路及具有该时序控制电路的前端总线电源
US8283950B2 (en) 2010-08-11 2012-10-09 Micron Technology, Inc. Delay lines, amplifier systems, transconductance compensating systems and methods of compensating
US8810281B2 (en) 2011-07-26 2014-08-19 Micron Technology, Inc. Sense amplifiers including bias circuits
WO2014013697A1 (ja) * 2012-07-16 2014-01-23 株式会社デンソー 電子装置およびその製造方法
US20150194203A1 (en) * 2012-07-27 2015-07-09 Hewlett-Packard Development Company, L.P. Storing memory with negative differential resistance material
KR102294149B1 (ko) 2015-02-13 2021-08-26 삼성전자주식회사 슈미트 트리거 회로 및 이를 포함하는 비휘발성 메모리 장치
WO2017127977A1 (en) 2016-01-25 2017-08-03 Telefonaktiebolaget Lm Ericsson (Publ) Circuitry and method for controlling a power amplifier in a transmit/receive switching system
CN108806742B (zh) * 2017-05-04 2022-01-04 汤朝景 随机存取存储器并且具有与其相关的电路、方法以及设备
TWI682634B (zh) * 2018-11-06 2020-01-11 崛智科技有限公司 積體電路系統
JP7297549B2 (ja) 2019-06-21 2023-06-26 エイブリック株式会社 電圧電流変換回路、及び充放電制御装置

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IT938775B (it) * 1971-08-25 1973-02-10 Ates Componenti Elettron Stabilizzatore di tensione inte grato a resistenza interna nega tiva
JPS5718651B2 (de) * 1974-02-04 1982-04-17
JPS5650448B2 (de) * 1974-03-08 1981-11-28
US4053798A (en) * 1975-02-20 1977-10-11 Matsushita Electronics Corporation Negative resistance device
IL59817A (en) * 1980-04-13 1982-11-30 Koor Metals Ltd Diagonal joint of skins for protective walls against blast and fragments
US4433527A (en) * 1981-08-19 1984-02-28 E. I. Du Pont De Nemours And Company Heat sealing film cut-off device
JPS5920986B2 (ja) * 1981-12-02 1984-05-16 セイコーエプソン株式会社 集積化基準電圧発生回路
US4516225A (en) * 1983-02-18 1985-05-07 Advanced Micro Devices, Inc. MOS Depletion load circuit
US4494020A (en) * 1983-04-13 1985-01-15 Tokyo Shibaura Denki Kabushiki Kaisha High sensitivity sense amplifier using different threshold valued MOS devices
US4716356A (en) * 1986-12-19 1987-12-29 Motorola, Inc. JFET pinch off voltage proportional reference current generating circuit
US4758749A (en) * 1987-05-19 1988-07-19 National Semiconductor Corporation CMOS current sense amplifier
JPH0173953U (de) * 1987-11-05 1989-05-18
US4868415A (en) * 1988-05-16 1989-09-19 Motorola, Inc. Voltage level conversion circuit
JP2588590B2 (ja) * 1988-07-20 1997-03-05 富士通株式会社 半導体記憶装置
US5253137A (en) * 1989-05-31 1993-10-12 U.S. Philips Corp. Integrated circuit having a sense amplifier
US5008565A (en) * 1990-01-23 1991-04-16 Triquint Semiconductor, Inc. High-impedance FET circuit
US5170077A (en) * 1990-09-14 1992-12-08 Texas Instruments Incorporated Voltage level detecting circuit
US5132576A (en) * 1990-11-05 1992-07-21 Ict International Cmos Technology, Inc. Sense amplifier having load device providing improved access time
US5317218A (en) * 1991-01-04 1994-05-31 United Microelectronics Corp. Current sense circuit with fast response
JPH04259991A (ja) * 1991-02-15 1992-09-16 Nec Ic Microcomput Syst Ltd 電流センスアンプ回路
KR940003836B1 (ko) * 1991-03-06 1994-05-03 현대전자산업 주식회사 데이타 감지회로
US5313117A (en) * 1991-07-22 1994-05-17 Nippon Telegraph And Telephone Corporation Semiconductor logic circuit using two n-type negative resistance devices
JPH0567933A (ja) * 1991-09-06 1993-03-19 Toshiba Corp レベルシフト回路
JP3290452B2 (ja) * 1991-11-06 2002-06-10 川崎マイクロエレクトロニクス株式会社 負性抵抗型双安定回路とその負性抵抗の制御方法
JP2817490B2 (ja) * 1992-01-16 1998-10-30 日本電気株式会社 スタティック型半導体メモリ読みだし回路

Also Published As

Publication number Publication date
KR100313776B1 (ko) 2001-11-16
US5498991A (en) 1996-03-12
KR100330915B1 (ko) 2002-04-03
EP0607614A2 (de) 1994-07-27
US5504442A (en) 1996-04-02
US5519348A (en) 1996-05-21
EP0607614A3 (de) 1994-08-31
EP0607614B1 (de) 2000-04-12
US5510746A (en) 1996-04-23
US5489874A (en) 1996-02-06
KR940016264A (ko) 1994-07-22
KR100304813B1 (ko) 2001-11-22
DE69328348T2 (de) 2000-12-28
US5514986A (en) 1996-05-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: OKI SEMICONDUCTOR CO.,LTD., TOKYO, JP