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DE69313365D1 - Optische Halbleitervorrichtung und ihr Herstellungsverfahren - Google Patents

Optische Halbleitervorrichtung und ihr Herstellungsverfahren

Info

Publication number
DE69313365D1
DE69313365D1 DE69313365T DE69313365T DE69313365D1 DE 69313365 D1 DE69313365 D1 DE 69313365D1 DE 69313365 T DE69313365 T DE 69313365T DE 69313365 T DE69313365 T DE 69313365T DE 69313365 D1 DE69313365 D1 DE 69313365D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
optical semiconductor
optical
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69313365T
Other languages
English (en)
Other versions
DE69313365T2 (de
Inventor
Mita Keizi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Publication of DE69313365D1 publication Critical patent/DE69313365D1/de
Application granted granted Critical
Publication of DE69313365T2 publication Critical patent/DE69313365T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
DE69313365T 1992-06-25 1993-06-24 Optische Halbleitervorrichtung und ihr Herstellungsverfahren Expired - Lifetime DE69313365T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4167545A JP2793085B2 (ja) 1992-06-25 1992-06-25 光半導体装置とその製造方法

Publications (2)

Publication Number Publication Date
DE69313365D1 true DE69313365D1 (de) 1997-10-02
DE69313365T2 DE69313365T2 (de) 1998-03-19

Family

ID=15851704

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69313365T Expired - Lifetime DE69313365T2 (de) 1992-06-25 1993-06-24 Optische Halbleitervorrichtung und ihr Herstellungsverfahren

Country Status (5)

Country Link
US (1) US5418396A (de)
EP (1) EP0576009B1 (de)
JP (1) JP2793085B2 (de)
KR (1) KR100208643B1 (de)
DE (1) DE69313365T2 (de)

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JP2731115B2 (ja) * 1994-07-14 1998-03-25 シャープ株式会社 分割型受光素子
US5770872A (en) 1995-12-06 1998-06-23 Arai; Chihiro Photoelectric converter apparatus
KR100223828B1 (ko) * 1996-09-02 1999-10-15 구본준 반도체 소자의 제조방법
JP3170463B2 (ja) * 1996-09-30 2001-05-28 シャープ株式会社 回路内蔵受光素子
TW423103B (en) * 1997-01-27 2001-02-21 Sharp Kk Divided photodiode
JPH10284753A (ja) * 1997-04-01 1998-10-23 Sony Corp 半導体装置及びその製造方法
JP4739467B2 (ja) * 1997-04-03 2011-08-03 ローム株式会社 光電気変換ｉｃ
US6274464B2 (en) * 1998-02-06 2001-08-14 Texas Instruments Incorporated Epitaxial cleaning process using HCL and N-type dopant gas to reduce defect density and auto doping effects
DE69906923T2 (de) * 1998-12-28 2004-02-26 Sharp K.K. Lichtempfänger mit integrierter Schaltung
JP3317942B2 (ja) * 1999-11-08 2002-08-26 シャープ株式会社 半導体装置およびその製造方法
JP2001284629A (ja) 2000-03-29 2001-10-12 Sharp Corp 回路内蔵受光素子
US6429500B1 (en) * 2000-09-29 2002-08-06 International Business Machines Corporation Semiconductor pin diode for high frequency applications
JP4208172B2 (ja) * 2000-10-31 2009-01-14 シャープ株式会社 フォトダイオードおよびそれを用いた回路内蔵受光素子
US6593636B1 (en) * 2000-12-05 2003-07-15 Udt Sensors, Inc. High speed silicon photodiodes and method of manufacture
JP2002231992A (ja) * 2001-02-02 2002-08-16 Toshiba Corp 半導体受光素子
JP4940511B2 (ja) * 2001-07-05 2012-05-30 ソニー株式会社 半導体装置およびその製造方法
JP2004087979A (ja) * 2002-08-28 2004-03-18 Sharp Corp 受光素子およびその製造方法並びに回路内蔵型受光素子
DE10241156A1 (de) * 2002-09-05 2004-03-18 Infineon Technologies Ag Verfahren zum Herstellen einer integrierten pin-Diode und zugehörige Schaltungsanordnung
JP4083553B2 (ja) * 2002-11-28 2008-04-30 松下電器産業株式会社 光半導体装置
KR20050106495A (ko) * 2003-03-06 2005-11-09 소니 가부시끼 가이샤 고체촬상소자 및 그 제조방법과 고체촬상소자의 구동방법
US8686529B2 (en) 2010-01-19 2014-04-01 Osi Optoelectronics, Inc. Wavelength sensitive sensor photodiodes
US8120023B2 (en) 2006-06-05 2012-02-21 Udt Sensors, Inc. Low crosstalk, front-side illuminated, back-side contact photodiode array
US7115439B2 (en) 2004-01-16 2006-10-03 Eastman Kodak Company High photosensitivity CMOS image sensor pixel architecture
US20070045668A1 (en) * 2005-08-26 2007-03-01 Micron Technology, Inc. Vertical anti-blooming control and cross-talk reduction for imagers
JP4966591B2 (ja) * 2006-06-07 2012-07-04 日本オプネクスト株式会社 半導体発光素子の製造方法
US9178092B2 (en) 2006-11-01 2015-11-03 Osi Optoelectronics, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
US7935546B2 (en) * 2008-02-06 2011-05-03 International Business Machines Corporation Method and apparatus for measurement and control of photomask to substrate alignment
MX2011002852A (es) 2008-09-15 2011-08-17 Udt Sensors Inc Fotodiodo de espina de capa activa delgada con una capa n+ superficial y metodo para fabricacion del mismo.
US8399909B2 (en) 2009-05-12 2013-03-19 Osi Optoelectronics, Inc. Tetra-lateral position sensing detector
JP2010278045A (ja) * 2009-05-26 2010-12-09 Panasonic Corp 光半導体装置
US8912615B2 (en) 2013-01-24 2014-12-16 Osi Optoelectronics, Inc. Shallow junction photodiode for detecting short wavelength light
JP2020009790A (ja) * 2016-11-09 2020-01-16 シャープ株式会社 アバランシェフォトダイオード
CN107946333A (zh) * 2017-11-30 2018-04-20 德淮半导体有限公司 图像传感器及形成图像传感器的方法
CN114883213A (zh) * 2022-07-11 2022-08-09 广州粤芯半导体技术有限公司 半导体工艺的集成化监测方法

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JPS546794A (en) * 1977-06-17 1979-01-19 Nec Corp Semiconductor device
JPS5660054A (en) * 1979-10-19 1981-05-23 Toshiba Corp Semiconductor integrated circuit
JPS5661160A (en) * 1979-10-25 1981-05-26 Pioneer Electronic Corp Semiconductor device
JPS6161457A (ja) * 1984-09-01 1986-03-29 Canon Inc 光センサおよびその製造方法
JPS61216464A (ja) * 1985-03-22 1986-09-26 Nec Corp 受光ダイオ−ドとトランジスタのモノリシツク集積素子
JPS63174357A (ja) * 1987-01-13 1988-07-18 Mitsubishi Electric Corp 半導体集積回路装置
JP2800827B2 (ja) * 1988-02-12 1998-09-21 浜松ホトニクス株式会社 光半導体装置およびその製造方法
JPH01255581A (ja) * 1988-04-04 1989-10-12 Fuji Photo Film Co Ltd 感圧記録材料
JPH0779154B2 (ja) * 1989-03-10 1995-08-23 シャープ株式会社 回路内蔵受光素子
JP2717839B2 (ja) * 1989-03-20 1998-02-25 松下電子工業株式会社 光半導体装置
NL8901629A (nl) * 1989-06-28 1991-01-16 Philips Nv Stralingsgevoelige halfgeleiderinrichting en uitlees- of schrijfeenheid bevattende een dergelijke stralingsgevoelige halfgeleiderinrichting.
JPH04114469A (ja) * 1990-09-04 1992-04-15 Sharp Corp 回路内蔵受光素子
JPH04152670A (ja) * 1990-10-17 1992-05-26 Nec Corp 受光素子の製造方法
JP2557750B2 (ja) * 1991-02-27 1996-11-27 三洋電機株式会社 光半導体装置

Also Published As

Publication number Publication date
DE69313365T2 (de) 1998-03-19
EP0576009A1 (de) 1993-12-29
JP2793085B2 (ja) 1998-09-03
JPH0613643A (ja) 1994-01-21
US5418396A (en) 1995-05-23
KR100208643B1 (ko) 1999-07-15
EP0576009B1 (de) 1997-08-27
KR940001385A (ko) 1994-01-11

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