KR100223828B1 - 반도체 소자의 제조방법 - Google Patents
반도체 소자의 제조방법 Download PDFInfo
- Publication number
- KR100223828B1 KR100223828B1 KR1019960037841A KR19960037841A KR100223828B1 KR 100223828 B1 KR100223828 B1 KR 100223828B1 KR 1019960037841 A KR1019960037841 A KR 1019960037841A KR 19960037841 A KR19960037841 A KR 19960037841A KR 100223828 B1 KR100223828 B1 KR 100223828B1
- Authority
- KR
- South Korea
- Prior art keywords
- region
- epitaxial layer
- impurity region
- layer
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000012535 impurity Substances 0.000 claims abstract description 53
- 238000002955 isolation Methods 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 150000002500 ions Chemical class 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 77
- 229920002120 photoresistant polymer Polymers 0.000 description 26
- 150000004767 nitrides Chemical class 0.000 description 7
- 239000004020 conductor Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- -1 Phospho Chemical class 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/24—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only two potential barriers, e.g. bipolar phototransistors
- H10F30/245—Bipolar phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims (1)
- (정정) 트랜지스터 영역과 포토다이오드영역을 갖는 제 1 도전형 반도체기판의 상기 각각 영역에 고농도 제 2 도전형 제 1, 제 2 매몰층을 형성하는 단계, 상기 제 1 제 2 매몰층 사이의 상기 반도체기판내에 제 1 도전형 불순물이온을 주입하는 단계, 상기 제 1, 제 2 매몰층을 포함한 상기 반도체기판에 제 2 도전형 에피텍셜층을 형성함과 동시에 상기 제 1 제 2 매몰층 사이의 상기 제 1 도전형 불순물이온을 확산시켜서 제 1 격리영역을 형성하는 단계, 상기 제 1 격리영역상의 상기 에피텍셜층내에 제 2 격리영역을 형성하는 단계, 상기 제 2 매몰층의 일측에 연결되도록 상기 에피텍셜층에 고농도 제 2 도전형 제 1 불순물영역을 형성하는 단계, 상기 각 영역의 에피텍셜층 표면에 각각 고농도 제 1 도전형 제 2 불순물영역 및 제 3 불순물영역을 형성하는 단계, 상기 제 1 불순물영역, 제 2 불순물영역내와 상기 트랜지스터 영역의 에피텍셜층에 고농도 제 2 도전형 제 4, 제 5, 제 6 불순물영역을 형성하는 단계를 포함하여 이루어짐을 특징으로 하는 반도체 소자의 제조방법.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960037841A KR100223828B1 (ko) | 1996-09-02 | 1996-09-02 | 반도체 소자의 제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960037841A KR100223828B1 (ko) | 1996-09-02 | 1996-09-02 | 반도체 소자의 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR19980019640A KR19980019640A (ko) | 1998-06-25 |
| KR100223828B1 true KR100223828B1 (ko) | 1999-10-15 |
Family
ID=19472504
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019960037841A Expired - Fee Related KR100223828B1 (ko) | 1996-09-02 | 1996-09-02 | 반도체 소자의 제조방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100223828B1 (ko) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02205079A (ja) * | 1989-02-02 | 1990-08-14 | Sharp Corp | 回路内蔵受光素子 |
| US5418396A (en) * | 1992-06-25 | 1995-05-23 | Sanyo Electric Co., Ltd. | Optical semiconductor device and fabrication method therefor |
-
1996
- 1996-09-02 KR KR1019960037841A patent/KR100223828B1/ko not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02205079A (ja) * | 1989-02-02 | 1990-08-14 | Sharp Corp | 回路内蔵受光素子 |
| US5418396A (en) * | 1992-06-25 | 1995-05-23 | Sanyo Electric Co., Ltd. | Optical semiconductor device and fabrication method therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| KR19980019640A (ko) | 1998-06-25 |
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