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JPS5660054A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5660054A
JPS5660054A JP13490579A JP13490579A JPS5660054A JP S5660054 A JPS5660054 A JP S5660054A JP 13490579 A JP13490579 A JP 13490579A JP 13490579 A JP13490579 A JP 13490579A JP S5660054 A JPS5660054 A JP S5660054A
Authority
JP
Japan
Prior art keywords
layer
type
specific resistance
region
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13490579A
Other languages
Japanese (ja)
Other versions
JPS6136713B2 (en
Inventor
Shuichi Kameyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13490579A priority Critical patent/JPS5660054A/en
Publication of JPS5660054A publication Critical patent/JPS5660054A/en
Publication of JPS6136713B2 publication Critical patent/JPS6136713B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To coexist both a PIN photodiode and a bipolar integrated circuit by growing a high specific resistance I layer on a semiconductor substrate and forming a low specific resistance region on a part of the layer by an ion implantation or diffusion or the like. CONSTITUTION:n Type buried layers 2-1, 2-2 are selectively formed on a p type Si substrate 1, a high specific resistance semiconductor layer (an I layer) 3 is thereafter grown thereon, and an n type buried layer 4-1 and an electrode pickup region 4-2 are formed on the surface of the I layer 3. Further, the second I layer 5 is grown and low specific resistance region 6 for forming a bipolar element is formed by an ion implantation or diffusion or the like. A p type layer 9 and an n<+> type layer 11 are formed in the region 6 and a bipolar element is thus formed. A p type layer 10 is formed on the residual part of the layer 5 and a PIN diode is formed. p<+> Type layers 7-1, 7-2 are formed for isolating the elements from each other.
JP13490579A 1979-10-19 1979-10-19 Semiconductor integrated circuit Granted JPS5660054A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13490579A JPS5660054A (en) 1979-10-19 1979-10-19 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13490579A JPS5660054A (en) 1979-10-19 1979-10-19 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5660054A true JPS5660054A (en) 1981-05-23
JPS6136713B2 JPS6136713B2 (en) 1986-08-20

Family

ID=15139262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13490579A Granted JPS5660054A (en) 1979-10-19 1979-10-19 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5660054A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63122164A (en) * 1986-11-11 1988-05-26 Pioneer Electronic Corp optical sensor integrated circuit
EP0576009A1 (en) * 1992-06-25 1993-12-29 Sanyo Electric Co., Limited. Optical semiconductor device and fabrication method therefor
EP0660414A1 (en) * 1993-12-21 1995-06-28 Sony Corporation Semiconductor device
US6049117A (en) * 1995-09-26 2000-04-11 Sharp Kabushiki Kaisha Light-receiving element
JP2002141419A (en) * 2000-11-06 2002-05-17 Texas Instr Japan Ltd Semiconductor device
JP2002231917A (en) * 2001-02-05 2002-08-16 Hamamatsu Photonics Kk Semiconductor light detection device
US7211829B2 (en) 2004-03-01 2007-05-01 Matsushita Electric Industrial Co., Ltd Semiconductor photodetector device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63122164A (en) * 1986-11-11 1988-05-26 Pioneer Electronic Corp optical sensor integrated circuit
EP0576009A1 (en) * 1992-06-25 1993-12-29 Sanyo Electric Co., Limited. Optical semiconductor device and fabrication method therefor
EP0660414A1 (en) * 1993-12-21 1995-06-28 Sony Corporation Semiconductor device
US6049117A (en) * 1995-09-26 2000-04-11 Sharp Kabushiki Kaisha Light-receiving element
JP2002141419A (en) * 2000-11-06 2002-05-17 Texas Instr Japan Ltd Semiconductor device
JP2002231917A (en) * 2001-02-05 2002-08-16 Hamamatsu Photonics Kk Semiconductor light detection device
US7211829B2 (en) 2004-03-01 2007-05-01 Matsushita Electric Industrial Co., Ltd Semiconductor photodetector device

Also Published As

Publication number Publication date
JPS6136713B2 (en) 1986-08-20

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