[go: up one dir, main page]

DE69735327D1 - Optische Halbleitervorrichtung und Herstellungsverfahren - Google Patents

Optische Halbleitervorrichtung und Herstellungsverfahren

Info

Publication number
DE69735327D1
DE69735327D1 DE69735327T DE69735327T DE69735327D1 DE 69735327 D1 DE69735327 D1 DE 69735327D1 DE 69735327 T DE69735327 T DE 69735327T DE 69735327 T DE69735327 T DE 69735327T DE 69735327 D1 DE69735327 D1 DE 69735327D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
optical semiconductor
optical
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69735327T
Other languages
English (en)
Other versions
DE69735327T2 (de
Inventor
Yasutaka Sakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Compound Semiconductor Devices Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Compound Semiconductor Devices Ltd filed Critical NEC Compound Semiconductor Devices Ltd
Publication of DE69735327D1 publication Critical patent/DE69735327D1/de
Application granted granted Critical
Publication of DE69735327T2 publication Critical patent/DE69735327T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12123—Diode
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12173—Masking
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12176—Etching
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12178—Epitaxial growth
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12195—Tapering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/106—Comprising an active region having a varying composition or cross-section in a specific direction varying thickness along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2077—Methods of obtaining the confinement using lateral bandgap control during growth, e.g. selective growth, mask induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2272—Buried mesa structure ; Striped active layer grown by a mask induced selective growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3409—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers special GRINSCH structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3421—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer structure of quantum wells to influence the near/far field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
DE69735327T 1996-12-05 1997-12-04 Optische Halbleitervorrichtung und Verfahren zum Herstellen derselben Expired - Fee Related DE69735327T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8325370A JP2967737B2 (ja) 1996-12-05 1996-12-05 光半導体装置とその製造方法
JP32537096 1996-12-05

Publications (2)

Publication Number Publication Date
DE69735327D1 true DE69735327D1 (de) 2006-04-27
DE69735327T2 DE69735327T2 (de) 2006-12-07

Family

ID=18176083

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69735327T Expired - Fee Related DE69735327T2 (de) 1996-12-05 1997-12-04 Optische Halbleitervorrichtung und Verfahren zum Herstellen derselben

Country Status (4)

Country Link
US (2) US6167070A (de)
EP (1) EP0846967B1 (de)
JP (1) JP2967737B2 (de)
DE (1) DE69735327T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE522417C2 (sv) * 1998-10-15 2004-02-10 Ericsson Telefon Ab L M Elektro-absorptionsmodulator (EAM) samt förfarande för tillverkning av sådan modulator
US6528337B1 (en) * 1999-04-08 2003-03-04 The Furukawa Electric Co., Ltd. Process of producing semiconductor layer structure
JP4570712B2 (ja) * 1999-10-14 2010-10-27 Ｏｋｉセミコンダクタ株式会社 半導体導波路素子及びその製造方法
US6684011B2 (en) * 2000-10-02 2004-01-27 Electronics And Telecommunications Research Institute Spot size converter and method of manufacturing the same
US6944197B2 (en) 2001-06-26 2005-09-13 University Of Maryland, Baltimore County Low crosstalk optical gain medium and method for forming same
WO2003003085A1 (en) * 2001-06-26 2003-01-09 University Of Maryland, Baltimore County Low crosstalk optical gain medium and method for forming same
JP3786054B2 (ja) * 2001-09-07 2006-06-14 日本電気株式会社 半導体光素子および半導体レーザ
US6954478B2 (en) * 2002-02-04 2005-10-11 Sanyo Electric Co., Ltd. Nitride-based semiconductor laser device
US7006719B2 (en) * 2002-03-08 2006-02-28 Infinera Corporation In-wafer testing of integrated optical components in photonic integrated circuits (PICs)
JP2003309330A (ja) * 2002-04-12 2003-10-31 Sumitomo Electric Ind Ltd 半導体光素子
US7965693B2 (en) * 2002-05-28 2011-06-21 Zte (Usa) Inc. Interworking mechanism between wireless wide area network and wireless local area network
US20030235227A1 (en) * 2002-06-19 2003-12-25 Naresh Chand Spot-size-converted laser for unisolated transmission
US20040119080A1 (en) * 2002-08-12 2004-06-24 Hashimoto Jun-Ichi Semiconductor optical device
KR100566186B1 (ko) * 2003-08-20 2006-03-29 삼성전자주식회사 파장 잠김된 채널을 생성하는 페브리-페롯 레이저와 그제작 방법
KR100738530B1 (ko) * 2005-07-21 2007-07-11 삼성전자주식회사 광 모드 변환기를 구비한 반도체 레이저 및 그 제조방법
JP2009295680A (ja) 2008-06-03 2009-12-17 Panasonic Corp 半導体レーザ装置
JP2010135586A (ja) * 2008-12-05 2010-06-17 Renesas Electronics Corp 半導体レーザ素子及びその製造方法
JP2012248812A (ja) * 2011-05-31 2012-12-13 Sumitomo Electric Ind Ltd 半導体光集積素子の製造方法
JP2013051319A (ja) * 2011-08-31 2013-03-14 Nippon Telegr & Teleph Corp <Ntt> 光半導体レーザ素子の製造方法
JP2014165327A (ja) * 2013-02-25 2014-09-08 Sony Corp 半導体発光素子及びその製造方法、並びに、表示装置
DE102013211851B4 (de) * 2013-06-21 2018-12-27 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser und Verfahren zu seiner Herstellung
EP4224647A1 (de) * 2018-11-02 2023-08-09 Huawei Technologies Co., Ltd. Optischer verstärker

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2620329B2 (ja) * 1988-09-22 1997-06-11 キヤノン株式会社 波長分波検出器
DE69414208T2 (de) * 1993-08-31 1999-03-25 Fujitsu Ltd., Kawasaki, Kanagawa Optischer Halbleitervorrichtung und Herstellungsverfahren
JP2555955B2 (ja) * 1993-11-11 1996-11-20 日本電気株式会社 半導体光増幅器およびその製造方法
JP2682421B2 (ja) * 1993-12-28 1997-11-26 日本電気株式会社 半導体光集積回路の製造方法
EP0690509A1 (de) * 1994-06-30 1996-01-03 Texas Instruments Incorporated Substratanschluss für eine Gate-Array-Basiszelle und Verfahren zu ihrer Herstellung
JP2842292B2 (ja) * 1994-09-16 1998-12-24 日本電気株式会社 半導体光集積装置および製造方法
JPH08116135A (ja) * 1994-10-17 1996-05-07 Mitsubishi Electric Corp 導波路集積素子の製造方法，及び導波路集積素子
EP1271721A3 (de) * 1994-12-27 2010-05-26 Fujitsu Limited Optische Halbleitervorrichtung
JP3401715B2 (ja) * 1994-12-27 2003-04-28 富士通株式会社 化合物半導体装置の製造方法
JPH08288583A (ja) * 1995-04-13 1996-11-01 Hitachi Ltd 半導体光素子およびその製造方法
JPH08292336A (ja) * 1995-04-20 1996-11-05 Nec Corp 光半導体集積回路の製造方法
JPH08330673A (ja) * 1995-06-02 1996-12-13 Fujitsu Ltd 光半導体装置
JP3061169B2 (ja) * 1995-11-02 2000-07-10 日本電気株式会社 半導体レーザ
JPH09153638A (ja) * 1995-11-30 1997-06-10 Nec Corp 導波路型半導体受光装置およびその製造方法
JPH09232625A (ja) * 1996-02-27 1997-09-05 Oki Electric Ind Co Ltd 端面発光型光半導体素子及びその製造方法
DE19626113A1 (de) * 1996-06-28 1998-01-02 Sel Alcatel Ag Optisches Halbleiterbauelement mit tiefem Rippenwellenleiter
DE19626130A1 (de) * 1996-06-28 1998-01-08 Sel Alcatel Ag Optisches Halbleiterbauelement mit tiefem Rippenwellenleiter
JP2924811B2 (ja) * 1996-09-20 1999-07-26 日本電気株式会社 半導体光集積素子とその製造方法

Also Published As

Publication number Publication date
EP0846967B1 (de) 2006-03-01
EP0846967A3 (de) 2000-06-07
US6383829B1 (en) 2002-05-07
US6167070A (en) 2000-12-26
JPH10173277A (ja) 1998-06-26
EP0846967A2 (de) 1998-06-10
DE69735327T2 (de) 2006-12-07
JP2967737B2 (ja) 1999-10-25

Similar Documents

Publication Publication Date Title
DE69511810D1 (de) Optische Halbleitervorrichtung und Herstellungsverfahren
DE69407312D1 (de) Integrierte optische Halbleiteranordnung und Herstellungsverfahren
DE69414208D1 (de) Optischer Halbleitervorrichtung und Herstellungsverfahren
DE69524794D1 (de) Optische Halbleitervorrichtung und Herstellungsverfahren
DE69735327D1 (de) Optische Halbleitervorrichtung und Herstellungsverfahren
DE69827902D1 (de) Optische Vorrichtung und Herstellungsverfahren
DE19545164B8 (de) Optische Halbleitervorrichtung mit vergrabenem Wellenleiter und Herstellungsverfahren dafür
DE69313365D1 (de) Optische Halbleitervorrichtung und ihr Herstellungsverfahren
DE69811861D1 (de) Optisches herstellungsverfahren und - gerät
DE69721411D1 (de) Halbleiteranordnung und Herstellungsverfahren dafür
DE69431318D1 (de) Optische Verrichtungen, integrierte optische Vorrichtungen und Herstellungsverfahren derselben
KR960009110A (ko) 반도체 장치 및 그 제조방법
DE69737588D1 (de) Halbleiteranordnung und Herstellungsverfahren dafür
DE69435205D1 (de) Dünne Halbleitervorrichtung und Herstellungsverfahren
KR960009107A (ko) 반도체장치와 그 제조방법
KR960012575A (ko) 반도체 장치 제조 방법
DE69223463D1 (de) Optische Halbleiter-Wellenleitervorrichtung und ihr Herstellungsverfahren
DE69413602D1 (de) Halbleiteranordnung und Herstellungsverfahren
KR960015900A (ko) 반도체 장치 및 그 제조방법
KR970004015A (ko) 반도체장치 및 그의 제조방법
KR960012574A (ko) 반도체장치 제조방법
DE69408743D1 (de) Optische Kopplungsvorrichtung und zugehörige Herstellungsmethode
DE69727608D1 (de) Halbleiterlaservorrichtung und zugehöriges Entwurfsverfahren
DE69132868D1 (de) Halbleiterlaservorrichtung und Herstellungsverfahren
DE69933176D1 (de) Optische Wellenleitervorrichtung und deren Herstellungsverfahren

Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee