CN100416816C - 制造固态成像装置的方法 - Google Patents
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Abstract
一种固态成像装置的制造方法,包括:树脂模制格状肋条形成部件,该肋条形成部件是用于构成多个固态成像装置的多个框状肋条的集合。使用具有与多个布线板对应的区域的集合的布线板,在每个区域中设置多个布线部件,将成像元件固定到集合布线板的每个区域上,并且连接成像元件的电极和布线部件。肋条形成部件放置在布线板表面上并且接合到该布线板表面,使得该成像元件设置在肋条形成部件的框状肋条内部。将透明板固定到肋条形成部件的上面,切割每个外壳,将这些固态成像装置分离为若干个单独的部件。利用本发明的方法能够制备低成本外壳,避免当一起形成多个外壳时、由布线板和由树脂构成的肋条之间的热膨胀的差异引起的变形。
Description
技术领域
本发明涉及制造固态成像装置的方法,在所述固态成像装置中,成像元件(例如CCD或类似元件)安装在外壳内。
背景技术
以封装的形式提供广泛用于摄影机和照相机等的固态成像装置,在所述固态成像装置中,将成像元件例如CCD等安装在由绝缘材料构成的基台上,光电检测区由透明板覆盖。为了使装置更小巧,将成像元件作为裸芯片安装在基台上。作为这些类型的固态成像装置的常规例子,下面参考图7说明在JP平5-267629A中公开的固态成像装置。
在图7中,附图标记21代表基台,在基台的顶面上形成凹部。成像元件芯片22形成在该凹部的中央。基台21配置有引线端子24,引线端子24的引线侧焊盘25通过由金属构成的键合线26连接到成像元件芯片22的键合焊盘23。为了保护该成像元件芯片22,通过在基台21的周边部分的上表面上一体地形成肋条并且在肋条的顶部上固定透明密封玻璃板而形成封装。
如图7所示,在密封玻璃板27面向上的情况下,将这种类型的固态成像装置安装在电路板上,并且使用引线端子24将其连接到电路板上的电极。尽管图中未示出,但在密封玻璃板27的顶部上安装有配置有成像光学系统的透镜镜筒,在预定精度条件下调整该透镜镜筒相对于形成在成像元件芯片22中的光电检测区的相对位置。在成像操作过程中,经过了配置在透镜镜筒中的成像光学系统的物体的光聚焦在光电检测区上,并且被光电转换。
上述常规的固态成像装置的例子具有外壳结构,在该外壳结构中,肋条28形成在基台21周边部分的上表面上。用于利用树脂模制外壳的铸模与外壳规格匹配,并且必须为每个产品制作铸模,导致制造成本增加。
为此,使用可以更便宜地制造的布线板的工艺并且使用将树脂肋条模制到该布线板上的工序是人们希望的。然而,当将树脂肋条模制到布线板上时,趋于出现由包含金属布线的布线板和由树脂构成的外壳之间的热膨胀系数差造成的外壳变形例如翘曲和扭曲。当一起制造用于固态成像装置的多个外壳时,这个问题尤其突出。
而且,为了抑制入射到外壳内部空间上的光的散射,有时肋条具有斜坡。斜坡方向随着固态成像装置的设计而不同。然而,当设置的斜坡方向使得肋条宽度在从板表面远离的方向增加时(下面称作“反斜坡”),会妨碍肋条树脂的模制。也就是说,如果外壳结构与基台21周边部分的上表面上的肋条28一体形成,或者如果将肋条树脂模制到布线板上,那么由于肋条的反斜坡,在形成外壳内部空间的成型模具部分模制之后的模具脱模成为问题。
发明内容
本发明的目的是提供一种用于制造固态成像装置的方法,其中能够制造具有最小变形的低成本外壳,避免为了构成多个固态成像装置、在外壳的批量制造过程中由布线板和由树脂构成的肋条之间的热膨胀差引起的外壳变形。
本发明的另一个目的是提供一种固态成像装置的制造方法,利用该方法,能够通过简单的工艺提供具有反斜坡的肋条。
根据本发明技术方案的固态成像装置的制造方法是为了制造一种固态成像装置,该装置包括:由绝缘树脂构成的布线板;形成内部空间的框状肋条,该框状肋条设置在该布线板的顶部上;用于从由布线板和肋条形成的外壳的内部空间电连接到外部的多个布线部件;固定到内部空间内部的布线板上的成像元件;固定到肋条上表面的透明板;和连接成像元件的电极和布线部件的连接部件。
为了解决上述问题,根据本发明的固态成像装置的制造方法包括:树脂模制格状肋条形成部件,该肋条形成部件是用于构成多个固态成像装置的多个框状肋条的集合;使用集合的布线板,该集合的布线板具有与多个布线板对应的区域,其中在每个区域中设置多个布线部件;将成像元件固定到集合的布线板的每个区域上,并且通过连接部件连接成像元件的电极和布线部件;将肋条形成部件放置到布线板表面上并且将其与该布线板表面接合,使得成像元件设置在肋条形成部件的框状肋条内部;将透明板固定到肋条形成部件的上面;和在垂直于基台部分的方向上和在分为两个肋条形成部件的宽度的方向上切割每个外壳,将固态成像装置分为单独的部件。
附图说明
图1是表示根据本发明实施例制造的固态成像装置的结构的剖面图。
图2是图1的固态成像装置的侧面图。
图3是图2的固态成像装置的底面图。
图4A至4F是表示根据本发明实施例用于制造固态成像装置的方法的剖面图。
图5是表示在相同制造方法中的肋条形成部件的顶视图。
图6是表示对在相同制造方法中的工序的一部分进行改变的例子的剖面图。
图7是常规固态成像装置的例子的剖面图。
具体实施方式
根据本发明中的用于制造固态成像装置的方法,将分离的由树脂形成的肋条形成部件结合到布线板上,由此避免在树脂模制时由布线板和树脂肋条之间的热膨胀的差异而引起的外壳变形,并能够以高精度制造低成本外壳。
此外,由于独立地树脂模制肋条形成部件,因此对在肋条上形成的斜坡进行树脂模制之后的模具脱模没有妨碍。
在根据本发明的用于制造固态成像装置的方法中,当固定透明板时,能够将覆盖多个外壳的尺寸的透明板固定到肋条形成部件的顶面上,并且当切割每个外壳时,该透明板也同时被切割。可以选择的是,当固定透明板时,使用与各个外壳对应的多个透明板,将相邻透明板的边缘安装到肋条形成部件上,在这些边缘之间形成间隙,在这些间隙的区域中将这些固态成像装置分为若干个部件。
此外,可以树脂模制肋条形成部件,使得肋条的剖面形状在垂直方向具有斜坡,并且可以将该肋条形成部件固定到布线板面上,使得肋条的窄侧面对布线板,从而可以容易地提供具有反斜坡的肋条。
下面将参考附图更具体地说明根据本发明实施例的固态成像装置的制造方法。首先参考图1至3说明通过本实施例制造的固态成像装置的结构。图1是固态成像装置的剖面图,图2是侧视图。图3是图2的底视图。
布线板1是平坦的并且是板形状的,并且由通常用于布线板的绝缘树脂构成,例如玻璃环氧树脂。将成像元件2固定到布线板1的顶部,使用粘合剂5a将当从上看时如同矩形框状的肋条3粘接到布线板1上,使其围绕该成像元件2。框状肋条3例如由环氧树脂构成,具有例如0.3至1.0mm的高度。使框状肋条3的内表面倾斜,使得框状肋条3的宽度随着离布线板1的距离而扩大。也就是说,对框状肋条3的剖面形状施加反斜坡,使得由框状肋条3封闭的内部空间随着离布线板1的距离而变窄。相对于垂直于布线板1表面的方向,优选框状肋条3的倾斜角在2至12°的范围内。
透明板4通过粘合剂5b固定到框状肋条3的上表面上。通过布线板1、框状肋条3和透明板4形成包含内部空间的封装。用于电连接封装的内部和外部的多个布线6形成在布线板1上。在封装空间的内部设置将成像元件2的焊盘电极2a连接到布线6的金属细线7。整个封装的厚度不大于2.0mm。还可以通过除了使用细金属线7以外的其它方法将成像元件的焊盘电极2a连接到布线6。
布线6由形成在其上安装了成像元件2的表面上的内部电极6a、形成在背面上的外部电极6b和形成在布线板1端面上的端面电极6c构成。外部电极6b位于与内部电极6a对应的位置。端面电极6c将内部电极6a连接到外部电极6b。内部电极6a、外部电极6b和端面电极6c中的任何一个例如都可以通过镀覆形成。端面电极6c位于形成在布线板1端面中的凹部1a中,如图3所示。端面电极6c的表面形成为基本上与布线板1的端面齐平,或者比布线板1的端面凹进更多。
绝缘膜8a和8b(图3中未示出绝缘膜8b)形成在围绕布线板1两个表面上的内部电极6a和外部电极6b的区域中。如附图所示形成外部电极6b的表面,从绝缘膜8b的表面凹进,或者基本上与绝缘膜8b的表面齐平。可以定位绝缘膜8b和外部电极6b,使得它们没有叠加部分,或者可以定位外部电极6b和绝缘膜8b的周边部分使它们重叠。
与封装的侧面对应的布线板1的端面、框状肋条3的侧表面和透明板4的端面形成为基本上齐平,结果该封装的侧面是平坦的。在制造工艺中,例如通过同时切割布线板1的端面、框状肋条3的侧面和透明板4的端面,可以形成具有高平整度的封装侧面。
根据上述结构,使用简单的布线板形成布线板1,通过在从布线板1的上面经过端面到下面的范围内进行镀覆,可以容易地形成布线6。这样,容易地制备更小巧的封装。
接着,下面参考图4A至4F和图5说明根据本实施例用于制造上述固态成像装置的制造方法。
首先,如图4A所示,由树脂模制肋条形成部件10。该肋条形成部件10具有多个框状肋条3集合的形式(参见图1),以便构成多个固态成像装置。它们的平面形状是如图5所示的格状。例如使用金属模具独立地树脂模制这些肋条形成部分10。而且,如图4A所示,肋条形成部件10的每个肋条的剖面形状在垂直方向具有斜坡。
此外,如图4B所示,制备集合的布线板11,该集合的布线板11具有对应于多个布线板1(参见图1)的区域。通过提供由绝缘树脂构成、具有布线部件12的平板状基台材料11a制成该集合的布线板11。布线部件12在对应于布线板1的区域中形成多个布线6(参见图1)的每一个。在基台材料11a的上和下表面上没有被布线部件12覆盖的部分上形成绝缘膜13。
这些布线部件12包括分别形成在基台材料11a的上面和下面上的上面导电层12a和下面导电层12b。在垂直方向上将上面导电层12a和下面导电层12b定位在相应的位置,并且上面导电层12a和下面导电层12b通过贯通导电层12c连接,该贯通导电层12c通过贯通基台材料11a形成。这些导电层可以通过任何普通的方法形成。例如,在基台材料11a中形成通孔、通过镀覆形成贯通导电层12c,和与贯通导电层12c的位置匹配,可以通过镀覆形成上面导电层12a和下面导电层12b。
接着,如图4C所示,将成像元件14固定到内部与布线板1对应的每个区域,将成像元件14的焊盘电极14a通过细金属线15连接到每个上面导电层12a。在对应于布线板1的每个区域的边界处形成粘合剂层16a。定位该粘合剂层16a,使其横跨在贯通导电层12c的位置处的上面导电层12a。
如图4D所示,在粘合剂层16a上安装肋条形成部件10,并且将肋条形成部件10接合到集合布线板11上。由此,将成像元件14设置在格状元件的内部。肋条形成部件10形成一种状况,使得以整体组合的方式设置构成相邻固态成像装置的框状肋条3,并且在下面描述的工序中将其分离,以便每个都属于这些固态成像装置中的一个。此外,在使得框状肋条3的窄侧面对集合布线板11的方向上接合肋条形成部件10。此外,在肋条形成部件10的上面形成粘合剂层16b。
接着,如图4E所示,通过粘合剂层16b在肋条形成部件10的上面安装透明板17,并且通过粘合剂层16b接合透明板17。
接着如图4F所示,通过切割刀18切割透明板17、肋条形成部件10和集合的布线板11,并且分离形成这些固态成像装置的部件。如图4F所示,当从上面看时,在处置于集合布线板11的方向上并且在将每个肋条形成部件10的宽度分为两份的方向上进行切割。结果是,将肋条形成部件10、上面导电层12a、下面导电层12b和贯通导电层12c平分,形成在每个单独的固态成像装置上的框状肋条3、内部电极6a、外部电极6b和端面电极6c。
根据该制造方法,在独立地树脂模制肋条形成部件10之后,将它们接合到集合的布线板11上,因此在肋条形成部件10模制之前和之后,不存在由具有金属布线的集合布线板11和由树脂构成的肋条形成部件10之间的热膨胀的差而引起的外壳变形。
此外,根据该制造方法,框状肋条3的宽度是肋条形成部件10的宽度的一半,这对于微型化是有利的。此外,通过一起切割透明板17、肋条形成部件10和集合的布线板11,由布线板1的端面形成的平面、框状肋条3的侧面和透明板4的端面基本上齐平,使得能够得到高的平滑度。
应注意,上面的说明使用了设置有具有反斜坡的框状肋条3的外壳作为例子。然而即使没有给框状肋条3设置反斜坡,在如本实施例那样独立地模制肋条形成部件之后接合布线板,也得到了类似的效果。
此外,如上所述,将透明板17的尺寸设置为覆盖多个外壳,当切割每个外壳时,能够采用如图6所示的方法,对透明板17的切割方法同样没有限制。也可以为每个外壳制备单独的透明板17a、17b等等,并且可以在肋条形成部件10上安装相邻透明板17a、17b的边缘,在这些边缘之间具有间隙。
在不离开本发明的精神和主要特征的情况下,可以以其它形式实施本发明。本申请公开的实施例在所有方面都应理解为说明性的而不是限制性的。本发明的范围由附加的权利要求而不是前面的描述来表示,并且在权利要求的等效含义和范围内的所有的变化都应包含在其内。
Claims (4)
1. 一种固态成像装置的制造方法,该固态成像装置包括:由绝缘树脂构成的一个布线板;形成内部空间的若干个框状肋条,所述框状肋条设置在该布线板的顶部上;用于从由所述布线板和所述框状肋条形成的外壳的内部空间电传导到外部的多个布线部件;固定在内部空间中的布线板上的成像元件;固定到所述框状肋条的上表面的一个透明板;和连接该成像元件的电极和布线部件的若干个连接部件;该方法包括:
树脂模制格状肋条形成部件,该肋条形成部件是用于构成多个固态成像装置的多个框状肋条的集合;
使用集合的布线板,该集合的布线板具有与多个布线板对应的若干个区域,其中在每个区域中设置多个布线部件;
将成像元件固定在集合的布线板的每个区域上,并且通过连接部件连接成像元件的电极和布线部件;
将肋条形成部件放置到布线板表面上,并且使肋条形成部件与该布线板表面接合,使得该成像元件设置在肋条形成部件的框状肋条内部;
将透明板固定在肋条形成部件的上表面;和
在垂直于基台部分的方向上和在将肋条形成部件的宽度分为两份的方向上切割每个外壳,以及将所述固态成像装置分离为若干个单独的部件。
2. 根据权利要求1的固态成像装置的制造方法,
其中当固定透明板时,将覆盖多个外壳的尺寸的透明板固定在该肋条形成部件的顶面上,并且当切割每个外壳时,同时也切割该透明板。
3. 根据权利要求1的固态成像装置的制造方法,
其中,当固定透明板时,使用与若干个单独的外壳对应的多个透明板,将相邻透明板的边缘安装到该肋条形成部件上,在这些边缘之间形成间隙,并且在这些间隙的区域中将所述多个固态成像装置分离为单独的部件。
4. 根据权利要求1的固态成像装置的制造方法,
其中树脂模制该肋条形成部件,使得所述框状肋条的剖面形状在垂直方向上具有斜坡,并且将该肋条形成部件固定到布线板面上,使得所述框状肋条的窄侧面对该布线板。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102738013A (zh) * | 2011-04-13 | 2012-10-17 | 精材科技股份有限公司 | 晶片封装体及其制作方法 |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5004410B2 (ja) * | 2004-04-26 | 2012-08-22 | Towa株式会社 | 光素子の樹脂封止成形方法および樹脂封止成形装置 |
JP5128047B2 (ja) * | 2004-10-07 | 2013-01-23 | Towa株式会社 | 光デバイス及び光デバイスの生産方法 |
US7985357B2 (en) | 2005-07-12 | 2011-07-26 | Towa Corporation | Method of resin-sealing and molding an optical device |
US20080151562A1 (en) * | 2005-11-02 | 2008-06-26 | Hwa Su | Fabrication structure for light emitting diode component |
TWI270183B (en) * | 2005-12-30 | 2007-01-01 | Advanced Semiconductor Eng | Wafer-level chip package process |
KR100747611B1 (ko) | 2006-03-08 | 2007-08-08 | 삼성전자주식회사 | 미소소자 패키지 및 그 제조방법 |
US7867807B2 (en) | 2006-03-29 | 2011-01-11 | Hamamatsu Photonics K.K. | Method for manufacturing photoelectric converting device |
TWI313943B (en) * | 2006-10-24 | 2009-08-21 | Chipmos Technologies Inc | Light emitting chip package and manufacturing thereof |
CN100533195C (zh) * | 2006-10-30 | 2009-08-26 | 鸿富锦精密工业(深圳)有限公司 | 镜头模块的封装方法 |
US7528420B2 (en) * | 2007-05-23 | 2009-05-05 | Visera Technologies Company Limited | Image sensing devices and methods for fabricating the same |
US8030761B2 (en) | 2007-05-23 | 2011-10-04 | United Test And Assembly Center Ltd. | Mold design and semiconductor package |
US7888758B2 (en) * | 2008-03-12 | 2011-02-15 | Aptina Imaging Corporation | Method of forming a permanent carrier and spacer wafer for wafer level optics and associated structure |
KR101698805B1 (ko) * | 2010-03-23 | 2017-02-02 | 삼성전자주식회사 | 웨이퍼 레벨의 패키지 방법 및 그에 의해 제조되는 반도체 소자 |
US9275949B2 (en) * | 2011-06-01 | 2016-03-01 | Canon Kabushiki Kaisha | Semiconductor device |
CN102815657B (zh) * | 2011-06-08 | 2015-10-21 | 上海巨哥电子科技有限公司 | 一种封装结构及其封装方法 |
DE102011113483B4 (de) | 2011-09-13 | 2023-10-19 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Bauelementen und optoelektronisches Bauelement |
CN102351141A (zh) * | 2011-11-01 | 2012-02-15 | 北京大学 | 一种mems器件的圆片级真空封装方法 |
USD680119S1 (en) * | 2011-11-15 | 2013-04-16 | Connectblue Ab | Module |
USD692896S1 (en) * | 2011-11-15 | 2013-11-05 | Connectblue Ab | Module |
USD689053S1 (en) * | 2011-11-15 | 2013-09-03 | Connectblue Ab | Module |
USD668659S1 (en) * | 2011-11-15 | 2012-10-09 | Connectblue Ab | Module |
USD680545S1 (en) * | 2011-11-15 | 2013-04-23 | Connectblue Ab | Module |
USD668658S1 (en) * | 2011-11-15 | 2012-10-09 | Connectblue Ab | Module |
US9082883B2 (en) * | 2013-03-04 | 2015-07-14 | Unisem (M) Berhad | Top port MEMS cavity package and method of manufacture thereof |
US10689249B2 (en) * | 2015-09-16 | 2020-06-23 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package including a wall and a grounding ring exposed from the wall |
JP2017157739A (ja) * | 2016-03-03 | 2017-09-07 | イビデン株式会社 | 電子部品付き配線板の製造方法 |
US10429321B2 (en) | 2016-08-29 | 2019-10-01 | Kla-Tencor Corporation | Apparatus for high-speed imaging sensor data transfer |
JP7218126B2 (ja) | 2018-08-30 | 2023-02-06 | キヤノン株式会社 | 配線板を備えるユニット、モジュールおよび機器 |
JP2020129629A (ja) * | 2019-02-12 | 2020-08-27 | エイブリック株式会社 | 光センサ装置およびその製造方法 |
CN111261647B (zh) * | 2020-01-20 | 2021-06-08 | 甬矽电子(宁波)股份有限公司 | 一种透光盖板、光学传感器及其制造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001118947A (ja) * | 1999-10-19 | 2001-04-27 | Nec Corp | 半導体装置用パッケージの製造方法及び半導体装置 |
CN1302455A (zh) * | 1998-05-07 | 2001-07-04 | 美国3M公司 | 层叠的集成电路封装 |
US6351027B1 (en) * | 2000-02-29 | 2002-02-26 | Agilent Technologies, Inc. | Chip-mounted enclosure |
JP2002124705A (ja) * | 2000-10-17 | 2002-04-26 | Citizen Electronics Co Ltd | 発光ダイオードとその製造方法 |
Family Cites Families (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0273556A1 (en) * | 1986-12-22 | 1988-07-06 | Trw Inc. | Integrated-circuit chip packaging construction |
US5256901A (en) * | 1988-12-26 | 1993-10-26 | Ngk Insulators, Ltd. | Ceramic package for memory semiconductor |
JP2647194B2 (ja) * | 1989-04-17 | 1997-08-27 | 住友電気工業株式会社 | 半導体用パッケージの封止方法 |
JPH05267629A (ja) | 1992-03-19 | 1993-10-15 | Sony Corp | 固体撮像装置 |
TW332348B (en) * | 1992-06-23 | 1998-05-21 | Sony Co Ltd | Manufacturing method for solid state motion picture device provides a highly accurate and low cost solid state motion picture device by use of empty package made of resin. |
JP3161142B2 (ja) * | 1993-03-26 | 2001-04-25 | ソニー株式会社 | 半導体装置 |
JP3541491B2 (ja) * | 1994-06-22 | 2004-07-14 | セイコーエプソン株式会社 | 電子部品 |
JP3127195B2 (ja) * | 1994-12-06 | 2001-01-22 | シャープ株式会社 | 発光デバイスおよびその製造方法 |
JP3507251B2 (ja) * | 1995-09-01 | 2004-03-15 | キヤノン株式会社 | 光センサicパッケージおよびその組立方法 |
JP2842355B2 (ja) * | 1996-02-01 | 1999-01-06 | 日本電気株式会社 | パッケージ |
US6011294A (en) * | 1996-04-08 | 2000-01-04 | Eastman Kodak Company | Low cost CCD packaging |
US6730991B1 (en) * | 1996-06-11 | 2004-05-04 | Raytheon Company | Integrated circuit chip package |
US6034429A (en) * | 1997-04-18 | 2000-03-07 | Amkor Technology, Inc. | Integrated circuit package |
US5811799A (en) * | 1997-07-31 | 1998-09-22 | Wu; Liang-Chung | Image sensor package having a wall with a sealed cover |
US5893726A (en) * | 1997-12-15 | 1999-04-13 | Micron Technology, Inc. | Semiconductor package with pre-fabricated cover and method of fabrication |
KR100259359B1 (ko) * | 1998-02-10 | 2000-06-15 | 김영환 | 반도체 패키지용 기판 및 반도체 패키지, 그리고 그 제조방법 |
US6060340A (en) * | 1998-07-16 | 2000-05-09 | Pan Pacific Semiconductor Co., Ltd. | Packing method of semiconductor device |
US6075237A (en) * | 1998-07-29 | 2000-06-13 | Eastman Kodak Company | Image sensor cover with integral light shield |
JP4372241B2 (ja) | 1998-08-05 | 2009-11-25 | パナソニック株式会社 | 固体撮像装置の製造方法 |
US6130448A (en) * | 1998-08-21 | 2000-10-10 | Gentex Corporation | Optical sensor package and method of making same |
US6262479B1 (en) * | 1999-10-05 | 2001-07-17 | Pan Pacific Semiconductor Co., Ltd. | Semiconductor packaging structure |
KR100370852B1 (ko) | 1999-12-20 | 2003-02-05 | 앰코 테크놀로지 코리아 주식회사 | 반도체패키지 |
JP3880278B2 (ja) * | 2000-03-10 | 2007-02-14 | オリンパス株式会社 | 固体撮像装置及びその製造方法 |
JP4239352B2 (ja) * | 2000-03-28 | 2009-03-18 | 株式会社日立製作所 | 電子装置の製造方法 |
TW454309B (en) | 2000-07-17 | 2001-09-11 | Orient Semiconductor Elect Ltd | Package structure of CCD image-capturing chip |
TW473951B (en) * | 2001-01-17 | 2002-01-21 | Siliconware Precision Industries Co Ltd | Non-leaded quad flat image sensor package |
US6737720B2 (en) * | 2001-01-23 | 2004-05-18 | Mon Nan Ho | Packaging structure of image sensor and method for packaging the same |
JP2002299595A (ja) | 2001-04-03 | 2002-10-11 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびその製造方法 |
JP2002353354A (ja) | 2001-05-25 | 2002-12-06 | Kyocera Corp | 撮像素子収納用パッケージ |
JP2002353763A (ja) | 2001-05-29 | 2002-12-06 | Mitsubishi Electric Corp | 圧電素子デバイスの製造方法 |
US6890834B2 (en) * | 2001-06-11 | 2005-05-10 | Matsushita Electric Industrial Co., Ltd. | Electronic device and method for manufacturing the same |
JP2002373950A (ja) | 2001-06-15 | 2002-12-26 | Seiko Instruments Inc | 気密封止icパッケージの製造方法 |
DE10139723A1 (de) * | 2001-08-13 | 2003-03-13 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Chip und strahlungsemittierendes Bauelement |
US6603183B1 (en) * | 2001-09-04 | 2003-08-05 | Amkor Technology, Inc. | Quick sealing glass-lidded package |
US6759266B1 (en) * | 2001-09-04 | 2004-07-06 | Amkor Technology, Inc. | Quick sealing glass-lidded package fabrication method |
US6624003B1 (en) * | 2002-02-06 | 2003-09-23 | Teravicta Technologies, Inc. | Integrated MEMS device and package |
US6784534B1 (en) * | 2002-02-06 | 2004-08-31 | Amkor Technology, Inc. | Thin integrated circuit package having an optically transparent window |
US6590269B1 (en) * | 2002-04-01 | 2003-07-08 | Kingpak Technology Inc. | Package structure for a photosensitive chip |
TWI268584B (en) * | 2002-04-15 | 2006-12-11 | Advanced Semiconductor Eng | Optical integrated circuit element package and method for making the same |
US20040038442A1 (en) * | 2002-08-26 | 2004-02-26 | Kinsman Larry D. | Optically interactive device packages and methods of assembly |
US6929974B2 (en) * | 2002-10-18 | 2005-08-16 | Motorola, Inc. | Feedthrough design and method for a hermetically sealed microdevice |
US6900531B2 (en) * | 2002-10-25 | 2005-05-31 | Freescale Semiconductor, Inc. | Image sensor device |
US6982470B2 (en) * | 2002-11-27 | 2006-01-03 | Seiko Epson Corporation | Semiconductor device, method of manufacturing the same, cover for semiconductor device, and electronic equipment |
JP4125112B2 (ja) | 2002-12-20 | 2008-07-30 | キヤノン株式会社 | 受光センサの製造方法 |
JP3782405B2 (ja) * | 2003-07-01 | 2006-06-07 | 松下電器産業株式会社 | 固体撮像装置およびその製造方法 |
-
2003
- 2003-09-03 JP JP2003311722A patent/JP4106003B2/ja not_active Expired - Fee Related
-
2004
- 2004-08-27 US US10/927,715 patent/US7247509B2/en not_active Expired - Lifetime
- 2004-09-01 EP EP04020751A patent/EP1526577A2/en not_active Withdrawn
- 2004-09-02 KR KR1020040069917A patent/KR100610662B1/ko not_active Expired - Fee Related
- 2004-09-03 CN CNB2004100752048A patent/CN100416816C/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1302455A (zh) * | 1998-05-07 | 2001-07-04 | 美国3M公司 | 层叠的集成电路封装 |
JP2001118947A (ja) * | 1999-10-19 | 2001-04-27 | Nec Corp | 半導体装置用パッケージの製造方法及び半導体装置 |
US6351027B1 (en) * | 2000-02-29 | 2002-02-26 | Agilent Technologies, Inc. | Chip-mounted enclosure |
JP2002124705A (ja) * | 2000-10-17 | 2002-04-26 | Citizen Electronics Co Ltd | 発光ダイオードとその製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102738013A (zh) * | 2011-04-13 | 2012-10-17 | 精材科技股份有限公司 | 晶片封装体及其制作方法 |
CN102738013B (zh) * | 2011-04-13 | 2016-04-20 | 精材科技股份有限公司 | 晶片封装体及其制作方法 |
Also Published As
Publication number | Publication date |
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EP1526577A2 (en) | 2005-04-27 |
US20050074912A1 (en) | 2005-04-07 |
KR100610662B1 (ko) | 2006-08-10 |
CN1591854A (zh) | 2005-03-09 |
JP4106003B2 (ja) | 2008-06-25 |
US7247509B2 (en) | 2007-07-24 |
KR20050024264A (ko) | 2005-03-10 |
JP2005079536A (ja) | 2005-03-24 |
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