JP4106003B2 - 固体撮像装置の製造方法 - Google Patents
固体撮像装置の製造方法 Download PDFInfo
- Publication number
- JP4106003B2 JP4106003B2 JP2003311722A JP2003311722A JP4106003B2 JP 4106003 B2 JP4106003 B2 JP 4106003B2 JP 2003311722 A JP2003311722 A JP 2003311722A JP 2003311722 A JP2003311722 A JP 2003311722A JP 4106003 B2 JP4106003 B2 JP 4106003B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring board
- rib
- state imaging
- solid
- forming member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000003384 imaging method Methods 0.000 title claims abstract description 65
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 238000000034 method Methods 0.000 title claims description 17
- 229920005989 resin Polymers 0.000 claims abstract description 16
- 239000011347 resin Substances 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 12
- 239000000853 adhesive Substances 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000005304 joining Methods 0.000 claims description 5
- 238000009795 derivation Methods 0.000 claims description 3
- 230000002776 aggregation Effects 0.000 abstract 1
- 238000004220 aggregation Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 19
- 239000000758 substrate Substances 0.000 description 12
- 238000005520 cutting process Methods 0.000 description 8
- 239000012790 adhesive layer Substances 0.000 description 7
- 238000000465 moulding Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000005394 sealing glass Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/804—Containers or encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/15165—Monolayer substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
1a 凹部
2 撮像素子
3 リブ
4 透光板
5a、5b 接着剤
6 配線
6a 内部電極
6b 外部電極
6c 端面電極
7 金属細線
8a、8b 絶縁膜
10 リブ形成部材
11 集合配線基板
11a 基材
12 配線部材
12a 上面導電層
12b 下面導電層
12c 貫通導電層
13 絶縁膜
14 撮像素子
15 金属細線
16a、16b 接着材
17 透明板
18 ダイシングブレード
21 基台
22 撮像素子チップ
23 ボンディングパッド
24 リード端子
25 リード側パッド
26 ボンディングワイヤ
27 シールガラス板
28 リブ
Claims (4)
- 絶縁性の樹脂からなる配線基板と、前記配線基板上に配置され内部空間を形成する枠状のリブと、前記配線基板と前記リブにより形成された筐体の前記内部空間から外部に亘って電気的な導出を行うための複数の配線部材と、前記内部空間内で前記配線基板上に固定された撮像素子と、前記リブの上端面に接合された透明板と、前記撮像素子の電極と前記各配線部材とを接続する金属細線とを備えた固体撮像装置を製造する方法において、
複数個の固体撮像装置を構成するための複数組の前記枠状のリブを集合させた格子状のリブ形成部材を樹脂成形し、
複数個の前記配線基板に対応する領域を有し、前記各領域に前記複数の配線部材が設けられた集合配線基板を用意し、
前記撮像素子を前記集合配線基板の前記各領域に固定して、前記撮像素子の電極と前記各配線部材とを前記金属細線により接続し、
前記リブ形成部材の各格子内に前記撮像素子が配置されるように、前記リブ形成部材を前記集合配線基板面に対向させて接着材により前記集合配線基板面に接合し、
前記透明板を前記リブ形成部材の上端面に接合し、
前記各筐体毎に分離するように、前記リブ形成部材および前記集合配線基板を切断することを特徴とする固体撮像装置の製造方法。 - 前記透明板を接合する際に、複数個の前記筐体に亘る大きさの前記透明板を前記リブ形成部材の上端面に載置し、前記各筐体毎に切断する際に、前記透明板も一括して切断する請求項1に記載の固体撮像装置の製造方法。
- 前記透明板を接合する際に、前記各筐体に対して各々別個の前記透明板を、隣接する前記各透明板の端縁を前記リブ形成部材上に互いの間に隙間を形成して載置し、前記隙間の領域において前記各固体撮像装置を各個片に分離する請求項1に記載の固体撮像装置の製造方法。
- 前記各リブの断面形状が上下方向にテーパを有するように前記リブ形成部材を樹脂成形し、前記リブの幅が狭い側が前記配線基板に面するように前記リブ形成部材を前記配線基板面に接合する請求項1に記載の固体撮像装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003311722A JP4106003B2 (ja) | 2003-09-03 | 2003-09-03 | 固体撮像装置の製造方法 |
US10/927,715 US7247509B2 (en) | 2003-09-03 | 2004-08-27 | Method for manufacturing solid-state imaging devices |
EP04020751A EP1526577A2 (en) | 2003-09-03 | 2004-09-01 | Method for manufacturing solid-state imaging devices |
KR1020040069917A KR100610662B1 (ko) | 2003-09-03 | 2004-09-02 | 고체 촬상 장치의 제조 방법 |
CNB2004100752048A CN100416816C (zh) | 2003-09-03 | 2004-09-03 | 制造固态成像装置的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003311722A JP4106003B2 (ja) | 2003-09-03 | 2003-09-03 | 固体撮像装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005079536A JP2005079536A (ja) | 2005-03-24 |
JP4106003B2 true JP4106003B2 (ja) | 2008-06-25 |
Family
ID=34385930
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003311722A Expired - Fee Related JP4106003B2 (ja) | 2003-09-03 | 2003-09-03 | 固体撮像装置の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7247509B2 (ja) |
EP (1) | EP1526577A2 (ja) |
JP (1) | JP4106003B2 (ja) |
KR (1) | KR100610662B1 (ja) |
CN (1) | CN100416816C (ja) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5004410B2 (ja) * | 2004-04-26 | 2012-08-22 | Towa株式会社 | 光素子の樹脂封止成形方法および樹脂封止成形装置 |
JP5128047B2 (ja) * | 2004-10-07 | 2013-01-23 | Towa株式会社 | 光デバイス及び光デバイスの生産方法 |
US7985357B2 (en) * | 2005-07-12 | 2011-07-26 | Towa Corporation | Method of resin-sealing and molding an optical device |
US20080151562A1 (en) * | 2005-11-02 | 2008-06-26 | Hwa Su | Fabrication structure for light emitting diode component |
TWI270183B (en) * | 2005-12-30 | 2007-01-01 | Advanced Semiconductor Eng | Wafer-level chip package process |
KR100747611B1 (ko) | 2006-03-08 | 2007-08-08 | 삼성전자주식회사 | 미소소자 패키지 및 그 제조방법 |
CN101405826B (zh) | 2006-03-29 | 2010-10-20 | 浜松光子学株式会社 | 光电变换装置的制造方法 |
TWI313943B (en) * | 2006-10-24 | 2009-08-21 | Chipmos Technologies Inc | Light emitting chip package and manufacturing thereof |
CN100533195C (zh) * | 2006-10-30 | 2009-08-26 | 鸿富锦精密工业(深圳)有限公司 | 镜头模块的封装方法 |
US7528420B2 (en) * | 2007-05-23 | 2009-05-05 | Visera Technologies Company Limited | Image sensing devices and methods for fabricating the same |
US8030761B2 (en) | 2007-05-23 | 2011-10-04 | United Test And Assembly Center Ltd. | Mold design and semiconductor package |
US7888758B2 (en) * | 2008-03-12 | 2011-02-15 | Aptina Imaging Corporation | Method of forming a permanent carrier and spacer wafer for wafer level optics and associated structure |
KR101698805B1 (ko) * | 2010-03-23 | 2017-02-02 | 삼성전자주식회사 | 웨이퍼 레벨의 패키지 방법 및 그에 의해 제조되는 반도체 소자 |
CN102738013B (zh) * | 2011-04-13 | 2016-04-20 | 精材科技股份有限公司 | 晶片封装体及其制作方法 |
US9275949B2 (en) * | 2011-06-01 | 2016-03-01 | Canon Kabushiki Kaisha | Semiconductor device |
CN102815657B (zh) * | 2011-06-08 | 2015-10-21 | 上海巨哥电子科技有限公司 | 一种封装结构及其封装方法 |
DE102011113483B4 (de) * | 2011-09-13 | 2023-10-19 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Bauelementen und optoelektronisches Bauelement |
CN102351141A (zh) * | 2011-11-01 | 2012-02-15 | 北京大学 | 一种mems器件的圆片级真空封装方法 |
USD680545S1 (en) * | 2011-11-15 | 2013-04-23 | Connectblue Ab | Module |
USD668658S1 (en) * | 2011-11-15 | 2012-10-09 | Connectblue Ab | Module |
USD668659S1 (en) * | 2011-11-15 | 2012-10-09 | Connectblue Ab | Module |
USD680119S1 (en) * | 2011-11-15 | 2013-04-16 | Connectblue Ab | Module |
USD692896S1 (en) * | 2011-11-15 | 2013-11-05 | Connectblue Ab | Module |
USD689053S1 (en) * | 2011-11-15 | 2013-09-03 | Connectblue Ab | Module |
US9082883B2 (en) * | 2013-03-04 | 2015-07-14 | Unisem (M) Berhad | Top port MEMS cavity package and method of manufacture thereof |
US10689249B2 (en) * | 2015-09-16 | 2020-06-23 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package including a wall and a grounding ring exposed from the wall |
JP2017157739A (ja) * | 2016-03-03 | 2017-09-07 | イビデン株式会社 | 電子部品付き配線板の製造方法 |
US10429321B2 (en) * | 2016-08-29 | 2019-10-01 | Kla-Tencor Corporation | Apparatus for high-speed imaging sensor data transfer |
JP7218126B2 (ja) | 2018-08-30 | 2023-02-06 | キヤノン株式会社 | 配線板を備えるユニット、モジュールおよび機器 |
JP2020129629A (ja) * | 2019-02-12 | 2020-08-27 | エイブリック株式会社 | 光センサ装置およびその製造方法 |
CN111261647B (zh) * | 2020-01-20 | 2021-06-08 | 甬矽电子(宁波)股份有限公司 | 一种透光盖板、光学传感器及其制造方法 |
Family Cites Families (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0273556A1 (en) * | 1986-12-22 | 1988-07-06 | Trw Inc. | Integrated-circuit chip packaging construction |
US5256901A (en) * | 1988-12-26 | 1993-10-26 | Ngk Insulators, Ltd. | Ceramic package for memory semiconductor |
JP2647194B2 (ja) * | 1989-04-17 | 1997-08-27 | 住友電気工業株式会社 | 半導体用パッケージの封止方法 |
JPH05267629A (ja) | 1992-03-19 | 1993-10-15 | Sony Corp | 固体撮像装置 |
TW332348B (en) * | 1992-06-23 | 1998-05-21 | Sony Co Ltd | Manufacturing method for solid state motion picture device provides a highly accurate and low cost solid state motion picture device by use of empty package made of resin. |
JP3161142B2 (ja) * | 1993-03-26 | 2001-04-25 | ソニー株式会社 | 半導体装置 |
JP3541491B2 (ja) * | 1994-06-22 | 2004-07-14 | セイコーエプソン株式会社 | 電子部品 |
JP3127195B2 (ja) * | 1994-12-06 | 2001-01-22 | シャープ株式会社 | 発光デバイスおよびその製造方法 |
JP3507251B2 (ja) * | 1995-09-01 | 2004-03-15 | キヤノン株式会社 | 光センサicパッケージおよびその組立方法 |
JP2842355B2 (ja) * | 1996-02-01 | 1999-01-06 | 日本電気株式会社 | パッケージ |
US6011294A (en) * | 1996-04-08 | 2000-01-04 | Eastman Kodak Company | Low cost CCD packaging |
US6730991B1 (en) * | 1996-06-11 | 2004-05-04 | Raytheon Company | Integrated circuit chip package |
US6034429A (en) * | 1997-04-18 | 2000-03-07 | Amkor Technology, Inc. | Integrated circuit package |
US5811799A (en) * | 1997-07-31 | 1998-09-22 | Wu; Liang-Chung | Image sensor package having a wall with a sealed cover |
US5893726A (en) * | 1997-12-15 | 1999-04-13 | Micron Technology, Inc. | Semiconductor package with pre-fabricated cover and method of fabrication |
KR100259359B1 (ko) * | 1998-02-10 | 2000-06-15 | 김영환 | 반도체 패키지용 기판 및 반도체 패키지, 그리고 그 제조방법 |
US6140707A (en) * | 1998-05-07 | 2000-10-31 | 3M Innovative Properties Co. | Laminated integrated circuit package |
US6060340A (en) * | 1998-07-16 | 2000-05-09 | Pan Pacific Semiconductor Co., Ltd. | Packing method of semiconductor device |
US6075237A (en) * | 1998-07-29 | 2000-06-13 | Eastman Kodak Company | Image sensor cover with integral light shield |
JP4372241B2 (ja) | 1998-08-05 | 2009-11-25 | パナソニック株式会社 | 固体撮像装置の製造方法 |
US6130448A (en) * | 1998-08-21 | 2000-10-10 | Gentex Corporation | Optical sensor package and method of making same |
US6262479B1 (en) * | 1999-10-05 | 2001-07-17 | Pan Pacific Semiconductor Co., Ltd. | Semiconductor packaging structure |
JP2001118947A (ja) * | 1999-10-19 | 2001-04-27 | Nec Corp | 半導体装置用パッケージの製造方法及び半導体装置 |
KR100370852B1 (ko) | 1999-12-20 | 2003-02-05 | 앰코 테크놀로지 코리아 주식회사 | 반도체패키지 |
US6351027B1 (en) * | 2000-02-29 | 2002-02-26 | Agilent Technologies, Inc. | Chip-mounted enclosure |
JP3880278B2 (ja) * | 2000-03-10 | 2007-02-14 | オリンパス株式会社 | 固体撮像装置及びその製造方法 |
JP4239352B2 (ja) * | 2000-03-28 | 2009-03-18 | 株式会社日立製作所 | 電子装置の製造方法 |
TW454309B (en) | 2000-07-17 | 2001-09-11 | Orient Semiconductor Elect Ltd | Package structure of CCD image-capturing chip |
JP2002124705A (ja) * | 2000-10-17 | 2002-04-26 | Citizen Electronics Co Ltd | 発光ダイオードとその製造方法 |
TW473951B (en) * | 2001-01-17 | 2002-01-21 | Siliconware Precision Industries Co Ltd | Non-leaded quad flat image sensor package |
US6737720B2 (en) * | 2001-01-23 | 2004-05-18 | Mon Nan Ho | Packaging structure of image sensor and method for packaging the same |
JP2002299595A (ja) | 2001-04-03 | 2002-10-11 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびその製造方法 |
JP2002353354A (ja) | 2001-05-25 | 2002-12-06 | Kyocera Corp | 撮像素子収納用パッケージ |
JP2002353763A (ja) | 2001-05-29 | 2002-12-06 | Mitsubishi Electric Corp | 圧電素子デバイスの製造方法 |
US6890834B2 (en) * | 2001-06-11 | 2005-05-10 | Matsushita Electric Industrial Co., Ltd. | Electronic device and method for manufacturing the same |
JP2002373950A (ja) | 2001-06-15 | 2002-12-26 | Seiko Instruments Inc | 気密封止icパッケージの製造方法 |
DE10139723A1 (de) * | 2001-08-13 | 2003-03-13 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Chip und strahlungsemittierendes Bauelement |
US6603183B1 (en) * | 2001-09-04 | 2003-08-05 | Amkor Technology, Inc. | Quick sealing glass-lidded package |
US6759266B1 (en) * | 2001-09-04 | 2004-07-06 | Amkor Technology, Inc. | Quick sealing glass-lidded package fabrication method |
US6784534B1 (en) * | 2002-02-06 | 2004-08-31 | Amkor Technology, Inc. | Thin integrated circuit package having an optically transparent window |
US6624003B1 (en) * | 2002-02-06 | 2003-09-23 | Teravicta Technologies, Inc. | Integrated MEMS device and package |
US6590269B1 (en) * | 2002-04-01 | 2003-07-08 | Kingpak Technology Inc. | Package structure for a photosensitive chip |
TWI268584B (en) * | 2002-04-15 | 2006-12-11 | Advanced Semiconductor Eng | Optical integrated circuit element package and method for making the same |
US20040038442A1 (en) * | 2002-08-26 | 2004-02-26 | Kinsman Larry D. | Optically interactive device packages and methods of assembly |
US6929974B2 (en) * | 2002-10-18 | 2005-08-16 | Motorola, Inc. | Feedthrough design and method for a hermetically sealed microdevice |
US6900531B2 (en) * | 2002-10-25 | 2005-05-31 | Freescale Semiconductor, Inc. | Image sensor device |
US6982470B2 (en) * | 2002-11-27 | 2006-01-03 | Seiko Epson Corporation | Semiconductor device, method of manufacturing the same, cover for semiconductor device, and electronic equipment |
JP4125112B2 (ja) | 2002-12-20 | 2008-07-30 | キヤノン株式会社 | 受光センサの製造方法 |
JP3782405B2 (ja) * | 2003-07-01 | 2006-06-07 | 松下電器産業株式会社 | 固体撮像装置およびその製造方法 |
-
2003
- 2003-09-03 JP JP2003311722A patent/JP4106003B2/ja not_active Expired - Fee Related
-
2004
- 2004-08-27 US US10/927,715 patent/US7247509B2/en active Active
- 2004-09-01 EP EP04020751A patent/EP1526577A2/en not_active Withdrawn
- 2004-09-02 KR KR1020040069917A patent/KR100610662B1/ko not_active IP Right Cessation
- 2004-09-03 CN CNB2004100752048A patent/CN100416816C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20050074912A1 (en) | 2005-04-07 |
EP1526577A2 (en) | 2005-04-27 |
KR20050024264A (ko) | 2005-03-10 |
CN100416816C (zh) | 2008-09-03 |
US7247509B2 (en) | 2007-07-24 |
CN1591854A (zh) | 2005-03-09 |
KR100610662B1 (ko) | 2006-08-10 |
JP2005079536A (ja) | 2005-03-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4106003B2 (ja) | 固体撮像装置の製造方法 | |
JP3898666B2 (ja) | 固体撮像装置およびその製造方法 | |
US7691678B2 (en) | Solid-state imaging device and method for manufacturing the same | |
JP3782405B2 (ja) | 固体撮像装置およびその製造方法 | |
JP3782406B2 (ja) | 固体撮像装置およびその製造方法 | |
US7719585B2 (en) | Solid-state imaging device | |
KR100644185B1 (ko) | 고체 촬상 장치의 제조 방법 | |
CN1835246A (zh) | 固体摄像装置及固体摄像装置的制造方法 | |
JP4219943B2 (ja) | 固体撮像装置 | |
JP4147171B2 (ja) | 固体撮像装置およびその製造方法 | |
JP2006332686A (ja) | 固体撮像装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050329 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20071122 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20071127 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080110 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20080304 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20080328 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4106003 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110404 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120404 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130404 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130404 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140404 Year of fee payment: 6 |
|
LAPS | Cancellation because of no payment of annual fees |