NL7920184A - Dieelektrisch geisoleerde, vastestof hoogspannings- schakelaar. - Google Patents
Dieelektrisch geisoleerde, vastestof hoogspannings- schakelaar. Download PDFInfo
- Publication number
- NL7920184A NL7920184A NL7920184A NL7920184A NL7920184A NL 7920184 A NL7920184 A NL 7920184A NL 7920184 A NL7920184 A NL 7920184A NL 7920184 A NL7920184 A NL 7920184A NL 7920184 A NL7920184 A NL 7920184A
- Authority
- NL
- Netherlands
- Prior art keywords
- region
- switching device
- gate
- regions
- semiconductor
- Prior art date
Links
- 239000007787 solid Substances 0.000 title description 5
- 239000004065 semiconductor Substances 0.000 claims description 29
- 239000004020 conductor Substances 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000012535 impurity Substances 0.000 description 20
- 238000010276 construction Methods 0.000 description 16
- 230000015556 catabolic process Effects 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 238000011109 contamination Methods 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 208000025165 Autoerythrocyte sensitization syndrome Diseases 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 230000000638 stimulation Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/211—Gated diodes
- H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
- Junction Field-Effect Transistors (AREA)
- Electronic Switches (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US97202278A | 1978-12-20 | 1978-12-20 | |
| US97202178A | 1978-12-20 | 1978-12-20 | |
| US97205678A | 1978-12-20 | 1978-12-20 | |
| US97205678 | 1978-12-20 | ||
| US97202278 | 1978-12-20 | ||
| US97202178 | 1978-12-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7920184A true NL7920184A (nl) | 1980-10-31 |
Family
ID=27420763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7920184A NL7920184A (nl) | 1978-12-20 | 1979-12-06 | Dieelektrisch geisoleerde, vastestof hoogspannings- schakelaar. |
Country Status (18)
| Country | Link |
|---|---|
| JP (1) | JPS6412106B2 (xx) |
| KR (1) | KR830002293B1 (xx) |
| AU (1) | AU529702B2 (xx) |
| CH (1) | CH659151A5 (xx) |
| DD (1) | DD147897A5 (xx) |
| ES (1) | ES487066A1 (xx) |
| FR (1) | FR2445026A1 (xx) |
| GB (1) | GB2049283B (xx) |
| HU (1) | HU181030B (xx) |
| IE (1) | IE48892B1 (xx) |
| IL (1) | IL58970A (xx) |
| IN (1) | IN153497B (xx) |
| IT (1) | IT1126603B (xx) |
| NL (1) | NL7920184A (xx) |
| PL (1) | PL220494A1 (xx) |
| SE (1) | SE446139B (xx) |
| SG (1) | SG32884G (xx) |
| WO (1) | WO1980001337A1 (xx) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4242697A (en) * | 1979-03-14 | 1980-12-30 | Bell Telephone Laboratories, Incorporated | Dielectrically isolated high voltage semiconductor devices |
| CA1145057A (en) * | 1979-12-28 | 1983-04-19 | Adrian R. Hartman | High voltage solid-state switch |
| WO1982003497A1 (en) * | 1981-03-27 | 1982-10-14 | Western Electric Co | Gated diode switch |
| US4467344A (en) * | 1981-12-23 | 1984-08-21 | At&T Bell Telephone Laboratories, Incorporated | Bidirectional switch using two gated diode switches in a single dielectrically isolated tub |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1547287A (fr) * | 1966-12-19 | 1968-11-22 | Lucas Industries Ltd | Diode semiconductrice |
| US3417393A (en) * | 1967-10-18 | 1968-12-17 | Texas Instruments Inc | Integrated circuit modular radar antenna |
| JPS4933432B1 (xx) * | 1968-12-20 | 1974-09-06 | ||
| DE2102103A1 (de) * | 1970-01-22 | 1971-07-29 | Rca Corp | Durch Feldeffekt gesteuerte Diode |
| US3722079A (en) * | 1970-06-05 | 1973-03-27 | Radiation Inc | Process for forming buried layers to reduce collector resistance in top contact transistors |
| DE2241600A1 (de) * | 1971-08-26 | 1973-03-01 | Dionics Inc | Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung |
| JPS5032942U (xx) * | 1973-07-23 | 1975-04-10 | ||
| US3911463A (en) * | 1974-01-07 | 1975-10-07 | Gen Electric | Planar unijunction transistor |
| US4146905A (en) * | 1974-06-18 | 1979-03-27 | U.S. Philips Corporation | Semiconductor device having complementary transistor structures and method of manufacturing same |
-
1979
- 1979-12-06 NL NL7920184A patent/NL7920184A/nl unknown
- 1979-12-06 CH CH6266/80A patent/CH659151A5/de not_active IP Right Cessation
- 1979-12-06 WO PCT/US1979/001043 patent/WO1980001337A1/en unknown
- 1979-12-06 JP JP55500207A patent/JPS6412106B2/ja not_active Expired
- 1979-12-06 GB GB8025972A patent/GB2049283B/en not_active Expired
- 1979-12-10 HU HU79WE614A patent/HU181030B/hu unknown
- 1979-12-14 DD DD79217696A patent/DD147897A5/de unknown
- 1979-12-14 AU AU53866/79A patent/AU529702B2/en not_active Ceased
- 1979-12-17 IL IL58970A patent/IL58970A/xx unknown
- 1979-12-18 FR FR7930946A patent/FR2445026A1/fr active Granted
- 1979-12-18 PL PL22049479A patent/PL220494A1/xx unknown
- 1979-12-19 ES ES487066A patent/ES487066A1/es not_active Expired
- 1979-12-19 IT IT28206/79A patent/IT1126603B/it active
- 1979-12-19 IE IE2474/79A patent/IE48892B1/en not_active IP Right Cessation
- 1979-12-20 KR KR1019790004540A patent/KR830002293B1/ko active
-
1980
- 1980-08-13 SE SE8005703A patent/SE446139B/sv not_active IP Right Cessation
- 1980-11-28 IN IN1328/CAL/80A patent/IN153497B/en unknown
-
1984
- 1984-04-25 SG SG328/84A patent/SG32884G/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| SE446139B (sv) | 1986-08-11 |
| FR2445026A1 (fr) | 1980-07-18 |
| AU5386679A (en) | 1980-06-26 |
| DD147897A5 (de) | 1981-04-22 |
| HU181030B (en) | 1983-05-30 |
| SG32884G (en) | 1985-02-08 |
| CH659151A5 (de) | 1986-12-31 |
| IE792474L (en) | 1980-06-20 |
| KR830001743A (ko) | 1983-05-18 |
| IE48892B1 (en) | 1985-06-12 |
| SE8005703L (sv) | 1980-08-13 |
| IT7928206A0 (it) | 1979-12-19 |
| JPS55501079A (xx) | 1980-12-04 |
| FR2445026B1 (xx) | 1983-08-19 |
| IL58970A0 (en) | 1980-03-31 |
| GB2049283B (en) | 1983-07-27 |
| IT1126603B (it) | 1986-05-21 |
| PL220494A1 (xx) | 1980-09-08 |
| AU529702B2 (en) | 1983-06-16 |
| GB2049283A (en) | 1980-12-17 |
| WO1980001337A1 (en) | 1980-06-26 |
| ES487066A1 (es) | 1980-09-16 |
| IN153497B (xx) | 1984-07-21 |
| KR830002293B1 (ko) | 1983-10-21 |
| IL58970A (en) | 1982-07-30 |
| JPS6412106B2 (xx) | 1989-02-28 |
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