Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
  • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
  • H01L21/76—Making of isolation regions between components
  • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
  • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D18/00—Thyristors
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
  • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
  • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
  • H01L21/743—Making of internal connections, substrate contacts
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
  • H10D12/211—Gated diodes
  • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes

Landscapes

• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Physics & Mathematics (AREA)
• Power Engineering (AREA)
• Thyristors (AREA)
• Junction Field-Effect Transistors (AREA)
• Electronic Switches (AREA)
• Thin Film Transistor (AREA)
• Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Applications Claiming Priority (6)

Publications (2)

Family

ID=27420763

Family Applications (1)

Country Status (18)

Families Citing this family (4)

Family Cites Families (9)

• 1979
  • 1979-12-06 CH CH6266/80A patent/CH659151A5/en not_active IP Right Cessation
  • 1979-12-06 NL NL7920184A patent/NL7920184A/en unknown
  • 1979-12-06 WO PCT/US1979/001043 patent/WO1980001337A1/en unknown
  • 1979-12-06 GB GB8025972A patent/GB2049283B/en not_active Expired
  • 1979-12-06 JP JP55500207A patent/JPS6412106B2/ja not_active Expired
  • 1979-12-10 HU HU79WE614A patent/HU181030B/en unknown
  • 1979-12-14 AU AU53866/79A patent/AU529702B2/en not_active Ceased
  • 1979-12-14 DD DD79217696A patent/DD147897A5/en unknown
  • 1979-12-17 IL IL58970A patent/IL58970A/en unknown
  • 1979-12-18 FR FR7930946A patent/FR2445026A1/en active Granted
  • 1979-12-18 PL PL22049479A patent/PL220494A1/xx unknown
  • 1979-12-19 IT IT28206/79A patent/IT1126603B/en active
  • 1979-12-19 IE IE2474/79A patent/IE48892B1/en not_active IP Right Cessation
  • 1979-12-19 ES ES487066A patent/ES487066A1/en not_active Expired
  • 1979-12-20 KR KR1019790004540A patent/KR830002293B1/en active
• 1980
  • 1980-08-13 SE SE8005703A patent/SE446139B/en not_active IP Right Cessation
  • 1980-11-28 IN IN1328/CAL/80A patent/IN153497B/en unknown
• 1984
  • 1984-04-25 SG SG328/84A patent/SG32884G/en unknown

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