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JPS5032942U - - Google Patents

Info

Publication number
JPS5032942U
JPS5032942U JP1973084780U JP8478073U JPS5032942U JP S5032942 U JPS5032942 U JP S5032942U JP 1973084780 U JP1973084780 U JP 1973084780U JP 8478073 U JP8478073 U JP 8478073U JP S5032942 U JPS5032942 U JP S5032942U
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1973084780U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1973084780U priority Critical patent/JPS5032942U/ja
Priority to DE2433981A priority patent/DE2433981C3/de
Priority to CA205,355A priority patent/CA1026467A/en
Publication of JPS5032942U publication Critical patent/JPS5032942U/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04QSELECTING
    • H04Q3/00Selecting arrangements
    • H04Q3/42Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker
    • H04Q3/52Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements
    • H04Q3/521Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements using semiconductors in the switching stages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • H10D18/251Lateral thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65Integrated injection logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Use Of Switch Circuits For Exchanges And Methods Of Control Of Multiplex Exchanges (AREA)
  • Electronic Switches (AREA)
  • Element Separation (AREA)
JP1973084780U 1973-07-23 1973-07-23 Pending JPS5032942U (xx)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP1973084780U JPS5032942U (xx) 1973-07-23 1973-07-23
DE2433981A DE2433981C3 (de) 1973-07-23 1974-07-15 Halbleitersprechpfadschalter
CA205,355A CA1026467A (en) 1973-07-23 1974-07-22 Semiconductor speech path switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1973084780U JPS5032942U (xx) 1973-07-23 1973-07-23

Publications (1)

Publication Number Publication Date
JPS5032942U true JPS5032942U (xx) 1975-04-10

Family

ID=13840191

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1973084780U Pending JPS5032942U (xx) 1973-07-23 1973-07-23

Country Status (3)

Country Link
JP (1) JPS5032942U (xx)
CA (1) CA1026467A (xx)
DE (1) DE2433981C3 (xx)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4602268A (en) * 1978-12-20 1986-07-22 At&T Bell Laboratories High voltage dielectrically isolated dual gate solid-state switch
US4587545A (en) * 1978-12-20 1986-05-06 At&T Bell Laboratories High voltage dielectrically isolated remote gate solid-state switch
NL7920184A (nl) * 1978-12-20 1980-10-31 Western Electric Co Dieelektrisch geisoleerde, vastestof hoogspannings- schakelaar.
US4608590A (en) * 1978-12-20 1986-08-26 At&T Bell Laboratories High voltage dielectrically isolated solid-state switch
US4587656A (en) * 1979-12-28 1986-05-06 At&T Bell Laboratories High voltage solid-state switch
CA1145057A (en) * 1979-12-28 1983-04-19 Adrian R. Hartman High voltage solid-state switch
JPH06151573A (ja) * 1992-11-06 1994-05-31 Hitachi Ltd 半導体集積回路装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3381182A (en) * 1964-10-19 1968-04-30 Philco Ford Corp Microcircuits having buried conductive layers
US3471922A (en) * 1966-06-02 1969-10-14 Raytheon Co Monolithic integrated circuitry with dielectric isolated functional regions
US3431468A (en) * 1967-04-17 1969-03-04 Motorola Inc Buried integrated circuit radiation shields

Also Published As

Publication number Publication date
CA1026467A (en) 1978-02-14
DE2433981C3 (de) 1985-01-10
DE2433981B2 (xx) 1975-09-04
DE2433981A1 (de) 1975-02-13

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