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CA1026467A - Semiconductor speech path switch - Google Patents

Semiconductor speech path switch

Info

Publication number
CA1026467A
CA1026467A CA205,355A CA205355A CA1026467A CA 1026467 A CA1026467 A CA 1026467A CA 205355 A CA205355 A CA 205355A CA 1026467 A CA1026467 A CA 1026467A
Authority
CA
Canada
Prior art keywords
path switch
speech path
semiconductor speech
semiconductor
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA205,355A
Other languages
French (fr)
Other versions
CA205355S (en
Inventor
Masaaki Kusano
Shinzi Okuhara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of CA1026467A publication Critical patent/CA1026467A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04QSELECTING
    • H04Q3/00Selecting arrangements
    • H04Q3/42Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker
    • H04Q3/52Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements
    • H04Q3/521Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements using semiconductors in the switching stages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • H10D18/251Lateral thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65Integrated injection logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Use Of Switch Circuits For Exchanges And Methods Of Control Of Multiplex Exchanges (AREA)
  • Electronic Switches (AREA)
  • Element Separation (AREA)
CA205,355A 1973-07-23 1974-07-22 Semiconductor speech path switch Expired CA1026467A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1973084780U JPS5032942U (en) 1973-07-23 1973-07-23

Publications (1)

Publication Number Publication Date
CA1026467A true CA1026467A (en) 1978-02-14

Family

ID=13840191

Family Applications (1)

Application Number Title Priority Date Filing Date
CA205,355A Expired CA1026467A (en) 1973-07-23 1974-07-22 Semiconductor speech path switch

Country Status (3)

Country Link
JP (1) JPS5032942U (en)
CA (1) CA1026467A (en)
DE (1) DE2433981C3 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4608590A (en) * 1978-12-20 1986-08-26 At&T Bell Laboratories High voltage dielectrically isolated solid-state switch
US4602268A (en) * 1978-12-20 1986-07-22 At&T Bell Laboratories High voltage dielectrically isolated dual gate solid-state switch
US4587545A (en) * 1978-12-20 1986-05-06 At&T Bell Laboratories High voltage dielectrically isolated remote gate solid-state switch
GB2049283B (en) * 1978-12-20 1983-07-27 Western Electric Co High voltage dielectrically isolated solid-state switch
US4587656A (en) * 1979-12-28 1986-05-06 At&T Bell Laboratories High voltage solid-state switch
CA1145057A (en) * 1979-12-28 1983-04-19 Adrian R. Hartman High voltage solid-state switch
JPH06151573A (en) * 1992-11-06 1994-05-31 Hitachi Ltd Semiconductor integrated circuit device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3381182A (en) * 1964-10-19 1968-04-30 Philco Ford Corp Microcircuits having buried conductive layers
US3471922A (en) * 1966-06-02 1969-10-14 Raytheon Co Monolithic integrated circuitry with dielectric isolated functional regions
US3431468A (en) * 1967-04-17 1969-03-04 Motorola Inc Buried integrated circuit radiation shields

Also Published As

Publication number Publication date
JPS5032942U (en) 1975-04-10
DE2433981A1 (en) 1975-02-13
DE2433981C3 (en) 1985-01-10
DE2433981B2 (en) 1975-09-04

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