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IT7928206A0 - Interruttore allo stato solido per alta tensione isolato dielettricamente. - Google Patents

Interruttore allo stato solido per alta tensione isolato dielettricamente.

Info

Publication number
IT7928206A0
IT7928206A0 IT7928206A IT2820679A IT7928206A0 IT 7928206 A0 IT7928206 A0 IT 7928206A0 IT 7928206 A IT7928206 A IT 7928206A IT 2820679 A IT2820679 A IT 2820679A IT 7928206 A0 IT7928206 A0 IT 7928206A0
Authority
IT
Italy
Prior art keywords
high voltage
solid state
state switch
isolated solid
dielectrically isolated
Prior art date
Application number
IT7928206A
Other languages
English (en)
Other versions
IT1126603B (it
Inventor
Berthold Joseph Ernest
Hartman Adrian Ralph
Mac Rae Alfred Urquhart
Riley Terence James
Shackle Peter William
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of IT7928206A0 publication Critical patent/IT7928206A0/it
Application granted granted Critical
Publication of IT1126603B publication Critical patent/IT1126603B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743Making of internal connections, substrate contacts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211Gated diodes
    • H10D12/212Gated diodes having PN junction gates, e.g. field controlled diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electronic Switches (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
IT28206/79A 1978-12-20 1979-12-19 Interruttore allo stato solido per alta tensione isolato dielettricamente IT1126603B (it)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US97202278A 1978-12-20 1978-12-20
US97202178A 1978-12-20 1978-12-20
US97205678A 1978-12-20 1978-12-20

Publications (2)

Publication Number Publication Date
IT7928206A0 true IT7928206A0 (it) 1979-12-19
IT1126603B IT1126603B (it) 1986-05-21

Family

ID=27420763

Family Applications (1)

Application Number Title Priority Date Filing Date
IT28206/79A IT1126603B (it) 1978-12-20 1979-12-19 Interruttore allo stato solido per alta tensione isolato dielettricamente

Country Status (18)

Country Link
JP (1) JPS6412106B2 (it)
KR (1) KR830002293B1 (it)
AU (1) AU529702B2 (it)
CH (1) CH659151A5 (it)
DD (1) DD147897A5 (it)
ES (1) ES487066A1 (it)
FR (1) FR2445026A1 (it)
GB (1) GB2049283B (it)
HU (1) HU181030B (it)
IE (1) IE48892B1 (it)
IL (1) IL58970A (it)
IN (1) IN153497B (it)
IT (1) IT1126603B (it)
NL (1) NL7920184A (it)
PL (1) PL220494A1 (it)
SE (1) SE446139B (it)
SG (1) SG32884G (it)
WO (1) WO1980001337A1 (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4242697A (en) * 1979-03-14 1980-12-30 Bell Telephone Laboratories, Incorporated Dielectrically isolated high voltage semiconductor devices
CA1145057A (en) * 1979-12-28 1983-04-19 Adrian R. Hartman High voltage solid-state switch
WO1982003497A1 (en) * 1981-03-27 1982-10-14 Western Electric Co Gated diode switch
US4467344A (en) * 1981-12-23 1984-08-21 At&T Bell Telephone Laboratories, Incorporated Bidirectional switch using two gated diode switches in a single dielectrically isolated tub

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1547287A (fr) * 1966-12-19 1968-11-22 Lucas Industries Ltd Diode semiconductrice
US3417393A (en) * 1967-10-18 1968-12-17 Texas Instruments Inc Integrated circuit modular radar antenna
JPS4933432B1 (it) * 1968-12-20 1974-09-06
DE2102103A1 (de) * 1970-01-22 1971-07-29 Rca Corp Durch Feldeffekt gesteuerte Diode
US3722079A (en) * 1970-06-05 1973-03-27 Radiation Inc Process for forming buried layers to reduce collector resistance in top contact transistors
DE2241600A1 (de) * 1971-08-26 1973-03-01 Dionics Inc Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung
JPS5032942U (it) * 1973-07-23 1975-04-10
US3911463A (en) * 1974-01-07 1975-10-07 Gen Electric Planar unijunction transistor
US4146905A (en) * 1974-06-18 1979-03-27 U.S. Philips Corporation Semiconductor device having complementary transistor structures and method of manufacturing same

Also Published As

Publication number Publication date
SE446139B (sv) 1986-08-11
FR2445026A1 (fr) 1980-07-18
AU5386679A (en) 1980-06-26
DD147897A5 (de) 1981-04-22
HU181030B (en) 1983-05-30
SG32884G (en) 1985-02-08
CH659151A5 (de) 1986-12-31
IE792474L (en) 1980-06-20
KR830001743A (ko) 1983-05-18
IE48892B1 (en) 1985-06-12
SE8005703L (sv) 1980-08-13
NL7920184A (nl) 1980-10-31
JPS55501079A (it) 1980-12-04
FR2445026B1 (it) 1983-08-19
IL58970A0 (en) 1980-03-31
GB2049283B (en) 1983-07-27
IT1126603B (it) 1986-05-21
PL220494A1 (it) 1980-09-08
AU529702B2 (en) 1983-06-16
GB2049283A (en) 1980-12-17
WO1980001337A1 (en) 1980-06-26
ES487066A1 (es) 1980-09-16
IN153497B (it) 1984-07-21
KR830002293B1 (ko) 1983-10-21
IL58970A (en) 1982-07-30
JPS6412106B2 (it) 1989-02-28

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19961223