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KR900011086A - 반도체 다이오드 레이저 및 그 제조방법 - Google Patents

반도체 다이오드 레이저 및 그 제조방법

Info

Publication number
KR900011086A
KR900011086A KR1019890018512A KR890018512A KR900011086A KR 900011086 A KR900011086 A KR 900011086A KR 1019890018512 A KR1019890018512 A KR 1019890018512A KR 890018512 A KR890018512 A KR 890018512A KR 900011086 A KR900011086 A KR 900011086A
Authority
KR
South Korea
Prior art keywords
manufacturing
diode laser
semiconductor diode
semiconductor
laser
Prior art date
Application number
KR1019890018512A
Other languages
English (en)
Other versions
KR0142587B1 (ko
Inventor
이디스 쿠인데르스마 피터
반 돈겐 토이니스
Original Assignee
필립스 일렉트로닉스 엔.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 필립스 일렉트로닉스 엔.브이. filed Critical 필립스 일렉트로닉스 엔.브이.
Publication of KR900011086A publication Critical patent/KR900011086A/ko
Application granted granted Critical
Publication of KR0142587B1 publication Critical patent/KR0142587B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
KR1019890018512A 1988-12-16 1989-12-14 반도체 다이오드 레이저 및 그 제조방법 KR0142587B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8803080A NL8803080A (nl) 1988-12-16 1988-12-16 Verstembare halfgeleiderdiodelaser met verdeelde reflectie en vervaardigingswijze van een dergelijke halfgeleiderdiodelaser.
NL8803080 1988-12-16

Publications (2)

Publication Number Publication Date
KR900011086A true KR900011086A (ko) 1990-07-11
KR0142587B1 KR0142587B1 (ko) 1998-08-17

Family

ID=19853388

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890018512A KR0142587B1 (ko) 1988-12-16 1989-12-14 반도체 다이오드 레이저 및 그 제조방법

Country Status (6)

Country Link
US (1) US4995048A (ko)
EP (1) EP0375021B1 (ko)
JP (1) JP3357357B2 (ko)
KR (1) KR0142587B1 (ko)
DE (1) DE68913934T2 (ko)
NL (1) NL8803080A (ko)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0457384A (ja) * 1990-06-27 1992-02-25 Mitsubishi Electric Corp 半導体レーザ
US5365577A (en) * 1990-09-27 1994-11-15 Radish Communications Systems, Inc. Telecommunication display system
US5091916A (en) * 1990-09-28 1992-02-25 At&T Bell Laboratories Distributed reflector laser having improved side mode suppression
NL9100103A (nl) * 1991-01-23 1992-08-17 Philips Nv Halfgeleiderdiodelaser met monitordiode.
US5243676A (en) * 1991-09-19 1993-09-07 E. I. Du Pont De Nemours And Company Segmented waveguides having selected Bragg reflection characteristics
JP2874442B2 (ja) * 1992-04-10 1999-03-24 日本電気株式会社 面入出力光電融合素子
US5319659A (en) * 1992-05-14 1994-06-07 The United States Of America As Represented By The United States Department Of Energy Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching
US5394429A (en) * 1992-10-30 1995-02-28 Nec Corporation Distributed-feedback laser with improved analog modulation distortion characteristics and method for fabricating the same
US5642371A (en) * 1993-03-12 1997-06-24 Kabushiki Kaisha Toshiba Optical transmission apparatus
US5379318A (en) * 1994-01-31 1995-01-03 Telefonaktiebolaget L M Ericsson Alternating grating tunable DBR laser
DE69529378T2 (de) * 1994-09-14 2003-10-09 Matsushita Electric Industrial Co., Ltd. Verfahren zur Stabilisierung der Ausgangsleistung von höheren harmonischen Wellen und Laserlichtquelle mit kurzer Wellenlänge die dasselbe benutzt
JPH104232A (ja) * 1996-06-18 1998-01-06 Fuji Photo Film Co Ltd エタロンおよび単一縦モードレーザー
EP1172907B1 (en) 2000-07-11 2006-05-31 Corning Incorporated A tunable gain-clamped semiconductor optical amplifier
US20040004217A1 (en) * 2002-03-06 2004-01-08 Vijaysekhar Jayaraman Semiconductor opto-electronic devices with wafer bonded gratings
KR100519922B1 (ko) * 2002-12-17 2005-10-10 한국전자통신연구원 다영역 자기모드 잠김 반도체 레이저 다이오드
FR2869162B1 (fr) 2004-04-14 2006-07-14 Centre Nat Rech Scient Cnrse Source laser accordable a adressage optique de la longueur d'onde
KR100620391B1 (ko) 2004-12-14 2006-09-12 한국전자통신연구원 집적형 반도체 광원
FR2892239B1 (fr) 2005-10-13 2008-01-04 Centre Nat Rech Scient Dispositif optique pour l'adressage d'une cavite esclave par une source large bande
US7723139B2 (en) * 2007-10-01 2010-05-25 Corning Incorporated Quantum well intermixing
US7852152B2 (en) * 2008-08-28 2010-12-14 Menara Networks Nth order tunable low-pass continuous time filter for fiber optic receivers
KR20100072534A (ko) * 2008-12-22 2010-07-01 한국전자통신연구원 반도체 레이저 장치
JP2017028231A (ja) * 2015-07-28 2017-02-02 日本電信電話株式会社 波長可変半導体レーザ
CN106242059A (zh) * 2016-08-05 2016-12-21 汪静 一种模块化人工湿地生活污水处理装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4751710A (en) * 1984-07-26 1988-06-14 Nec Corporation Semiconductor laser device
JPH0632332B2 (ja) * 1984-08-24 1994-04-27 日本電気株式会社 半導体レ−ザ装置
GB2197531B (en) * 1986-11-08 1991-02-06 Stc Plc Distributed feedback laser
JPS63299291A (ja) * 1987-05-29 1988-12-06 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体レ−ザ
JP2825508B2 (ja) * 1987-10-09 1998-11-18 株式会社日立製作所 半導体レーザ装置および光通信システム
FR2639773B1 (fr) * 1988-11-25 1994-05-13 Alcatel Nv Laser a semi-conducteur accordable

Also Published As

Publication number Publication date
EP0375021B1 (en) 1994-03-16
US4995048A (en) 1991-02-19
DE68913934D1 (de) 1994-04-21
KR0142587B1 (ko) 1998-08-17
EP0375021A1 (en) 1990-06-27
JP3357357B2 (ja) 2002-12-16
NL8803080A (nl) 1990-07-16
DE68913934T2 (de) 1994-09-22
JPH02205092A (ja) 1990-08-14

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Legal Events

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PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19891214

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PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 19941214

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 19891214

Comment text: Patent Application

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 19980130

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PR0701 Registration of establishment

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Patent event date: 19980401

Patent event code: PR07011E01D

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Termination date: 20020110