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DE68909632D1 - Halbleiterlaser-Vorrichtung und deren Herstellungsverfahren. - Google Patents

Halbleiterlaser-Vorrichtung und deren Herstellungsverfahren.

Info

Publication number
DE68909632D1
DE68909632D1 DE89301262T DE68909632T DE68909632D1 DE 68909632 D1 DE68909632 D1 DE 68909632D1 DE 89301262 T DE89301262 T DE 89301262T DE 68909632 T DE68909632 T DE 68909632T DE 68909632 D1 DE68909632 D1 DE 68909632D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89301262T
Other languages
English (en)
Other versions
DE68909632T2 (de
Inventor
Koichi C O Patent Divisi Nitta
Yukie C O Patent Div Nishikawa
Masayuki C O Patent D Ishikawa
Yasuhiko C O Patent D Tsuburai
Yoshihiro C O Patent D Kokubun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63026490A external-priority patent/JP2685776B2/ja
Priority claimed from JP11670488A external-priority patent/JP2642403B2/ja
Priority claimed from JP63172312A external-priority patent/JP2685818B2/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE68909632D1 publication Critical patent/DE68909632D1/de
Publication of DE68909632T2 publication Critical patent/DE68909632T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/321—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures having intermediate bandgap layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/095—Laser devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/157—Special diffusion and profiles

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE89301262T 1988-02-09 1989-02-09 Halbleiterlaser-Vorrichtung und deren Herstellungsverfahren. Expired - Fee Related DE68909632T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP63026490A JP2685776B2 (ja) 1988-02-09 1988-02-09 半導体発光素子及びその製造方法
JP11670488A JP2642403B2 (ja) 1988-05-13 1988-05-13 半導体レーザの製造方法
JP63172312A JP2685818B2 (ja) 1988-07-11 1988-07-11 半導体レーザ装置

Publications (2)

Publication Number Publication Date
DE68909632D1 true DE68909632D1 (de) 1993-11-11
DE68909632T2 DE68909632T2 (de) 1994-03-10

Family

ID=27285427

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89301262T Expired - Fee Related DE68909632T2 (de) 1988-02-09 1989-02-09 Halbleiterlaser-Vorrichtung und deren Herstellungsverfahren.

Country Status (3)

Country Link
US (2) US4922499A (de)
EP (1) EP0328393B1 (de)
DE (1) DE68909632T2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5145792A (en) * 1988-05-23 1992-09-08 Optical Measurement Technology Development Co., Ltd. Method of fabricating a semiconductor optical device
JP2831667B2 (ja) * 1988-12-14 1998-12-02 株式会社東芝 半導体レーザ装置及びその製造方法
US5181218A (en) * 1988-12-14 1993-01-19 Kabushiki Kaisha Toshiba Manufacturing method of semiconductor laser with non-absorbing mirror structure
MY104857A (en) * 1989-01-24 1994-06-30 Rohm Co Ltd Semiconductor lasers
US5563094A (en) * 1989-03-24 1996-10-08 Xerox Corporation Buried reverse bias junction configurations in semiconductor structures employing photo induced evaporation enhancement during in situ epitaxial growth and device structures utilizing the same
JP2752423B2 (ja) * 1989-03-31 1998-05-18 三菱電機株式会社 化合物半導体へのＺｎ拡散方法
US5153889A (en) * 1989-05-31 1992-10-06 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US5048035A (en) * 1989-05-31 1991-09-10 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US5065404A (en) * 1989-07-12 1991-11-12 Kabushiki Kaisha Toshiba Transverse-mode oscillation semiconductor laser device
DE69010485T2 (de) * 1990-04-06 1995-01-26 Ibm Verfahren zur Erzeugung der Stegstruktur eines selbstausrichtenden Halbleiterlasers.
JP2566661B2 (ja) * 1990-04-18 1996-12-25 三菱電機株式会社 不純物拡散方法
US5202895A (en) * 1990-05-07 1993-04-13 Kabushiki Kaisha Toshiba Semiconductor device having an active layer made of ingaalp material
EP0460937B1 (de) * 1990-06-05 1994-10-19 Matsushita Electric Industrial Co., Ltd. Verfahren zur Herstellung eines Halbleiterlasers
JPH0449691A (ja) * 1990-06-18 1992-02-19 Mitsubishi Electric Corp 可視光レーザダイオード
US5161167A (en) * 1990-06-21 1992-11-03 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser producing visible light
JP2971218B2 (ja) * 1991-12-04 1999-11-02 協和醗酵工業株式会社 ウリカーゼ遺伝子およびウリカーゼの製造法
JP3242967B2 (ja) * 1992-01-31 2001-12-25 株式会社東芝 半導体発光素子
US5246878A (en) * 1992-03-27 1993-09-21 Bell Communications Research, Inc. Capping layer preventing deleterious effects of As--P exchange
US5625201A (en) * 1994-12-12 1997-04-29 Motorola Multiwavelength LED devices and methods of fabrication
US6346720B1 (en) * 1995-02-03 2002-02-12 Sumitomo Chemical Company, Limited Layered group III-V compound semiconductor, method of manufacturing the same, and light emitting element
JPH11163458A (ja) * 1997-11-26 1999-06-18 Mitsui Chem Inc 半導体レーザ装置
JP2000031600A (ja) * 1998-07-14 2000-01-28 Nec Corp 半導体レーザの製造方法
US6649942B2 (en) * 2001-05-23 2003-11-18 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device
US7741654B2 (en) * 2004-09-16 2010-06-22 Nec Corporation Group III nitride semiconductor optical device
KR20060034456A (ko) * 2004-10-19 2006-04-24 삼성전자주식회사 반도체 레이저 다이오드 및 그 제조방법
JP2010199520A (ja) * 2009-02-27 2010-09-09 Renesas Electronics Corp 半導体レーザ及び半導体レーザの製造方法
DE102018123019A1 (de) * 2018-09-19 2020-03-19 Osram Opto Semiconductors Gmbh Gewinngeführter halbleiterlaser und herstellungsverfahren hierfür

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1569369A (en) * 1977-04-01 1980-06-11 Standard Telephones Cables Ltd Injection lasers
JPS55154793A (en) * 1979-05-22 1980-12-02 Sharp Corp Semiconductor laser element
JPS5873178A (ja) * 1981-10-27 1983-05-02 Fujitsu Ltd 半導体発光装置
US4517674A (en) * 1982-08-31 1985-05-14 The United States Of America As Represented By The Secretary Of The Navy Zinc-diffused narrow stripe AlGaAs/GaAs double heterostructure laser
JPS6014482A (ja) * 1983-07-04 1985-01-25 Toshiba Corp 半導体レ−ザ装置
JPS6066891A (ja) * 1983-09-22 1985-04-17 Toshiba Corp 半導体レ−ザ装置
JPS60137088A (ja) * 1983-12-26 1985-07-20 Toshiba Corp 半導体レ−ザ装置
JPS60192380A (ja) * 1984-03-13 1985-09-30 Mitsubishi Electric Corp 半導体レ−ザ装置
CA1247947A (en) * 1984-07-31 1989-01-03 Masaru Wada Method of manufacturing semiconductor device
JPH0766992B2 (ja) * 1984-12-21 1995-07-19 ソニー株式会社 ＡｌＧａＩｎＰ系半導体レーザとその製造方法
JPS6216592A (ja) * 1985-07-15 1987-01-24 Nec Corp 半導体発光素子
US4799228A (en) * 1985-08-23 1989-01-17 Kabushiki Kaisha Toshiba Transverse-mode stabilized semiconductor laser diode with slab-coupled waveguide
JPH0732285B2 (ja) * 1986-02-28 1995-04-10 株式会社東芝 半導体レ−ザ装置
US4792958A (en) * 1986-02-28 1988-12-20 Kabushiki Kaisha Toshiba Semiconductor laser with mesa stripe waveguide structure
US4839307A (en) * 1986-05-14 1989-06-13 Omron Tateisi Electronics Co. Method of manufacturing a stripe-shaped heterojunction laser with unique current confinement
DE3789695T2 (de) * 1986-08-08 1994-08-25 Toshiba Kawasaki Kk Doppelheterostruktur-Halbleiterlaser mit streifenförmigem Mesa-Wellenleiter.
JPH06216592A (ja) * 1993-01-18 1994-08-05 Toshiba Corp 電子部品のリード矯正装置

Also Published As

Publication number Publication date
DE68909632T2 (de) 1994-03-10
EP0328393A3 (en) 1989-11-15
US4922499A (en) 1990-05-01
US4987097A (en) 1991-01-22
EP0328393A2 (de) 1989-08-16
EP0328393B1 (de) 1993-10-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee