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DE69432345D1 - Halbleiterdiodenlaser - Google Patents

Halbleiterdiodenlaser

Info

Publication number
DE69432345D1
DE69432345D1 DE69432345T DE69432345T DE69432345D1 DE 69432345 D1 DE69432345 D1 DE 69432345D1 DE 69432345 T DE69432345 T DE 69432345T DE 69432345 T DE69432345 T DE 69432345T DE 69432345 D1 DE69432345 D1 DE 69432345D1
Authority
DE
Germany
Prior art keywords
diode laser
semiconductor diode
semiconductor
laser
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69432345T
Other languages
English (en)
Other versions
DE69432345T2 (de
Inventor
Hideyoshi Horie
Yuichi Inoue
Kenji Shimoyama
Nobuyuki Hosoi
Hideki Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chemical Corp filed Critical Mitsubishi Chemical Corp
Publication of DE69432345D1 publication Critical patent/DE69432345D1/de
Application granted granted Critical
Publication of DE69432345T2 publication Critical patent/DE69432345T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/204—Strongly index guided structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3216—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities quantum well or superlattice cladding layers

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
DE69432345T 1993-12-27 1994-12-23 Halbleiterdiodenlaser Expired - Fee Related DE69432345T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33322193A JPH07193333A (ja) 1993-12-27 1993-12-27 半導体発光素子

Publications (2)

Publication Number Publication Date
DE69432345D1 true DE69432345D1 (de) 2003-04-30
DE69432345T2 DE69432345T2 (de) 2003-12-24

Family

ID=18263676

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69432345T Expired - Fee Related DE69432345T2 (de) 1993-12-27 1994-12-23 Halbleiterdiodenlaser

Country Status (4)

Country Link
US (1) US5619518A (de)
EP (1) EP0661784B1 (de)
JP (1) JPH07193333A (de)
DE (1) DE69432345T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5811839A (en) * 1994-09-01 1998-09-22 Mitsubishi Chemical Corporation Semiconductor light-emitting devices
US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
US5751752A (en) * 1994-09-14 1998-05-12 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
JPH08307003A (ja) * 1995-04-28 1996-11-22 Mitsubishi Electric Corp 半導体レーザ装置
JP3718548B2 (ja) * 1995-10-20 2005-11-24 ソニー株式会社 半導体発光装置の製造方法
SE506651C2 (sv) * 1996-02-27 1998-01-26 Ericsson Telefon Ab L M Begravd heterostruktur
JPH11163383A (ja) * 1997-11-25 1999-06-18 Oki Electric Ind Co Ltd 半導体受光素子
GB2346735B (en) * 1999-02-13 2004-03-31 Sharp Kk A semiconductor laser device
JP3719047B2 (ja) 1999-06-07 2005-11-24 日亜化学工業株式会社 窒化物半導体素子
EP1146615A4 (de) * 1999-09-22 2005-10-19 Mitsubishi Chem Corp Leuchtendes element und modul mit leuchtenden elementen
EP1130724A1 (de) * 2000-03-03 2001-09-05 Alpes Lasers Quantenkaskadierter Laser und sein Herstellungsverfahren
DE10108079A1 (de) * 2000-05-30 2002-09-12 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
US8280533B2 (en) * 2000-06-20 2012-10-02 Fisher-Rosemount Systems, Inc. Continuously scheduled model parameter based adaptive controller
JP3797151B2 (ja) * 2001-07-05 2006-07-12 ソニー株式会社 レーザダイオード、光学ピックアップ装置、光ディスク装置および光通信装置
US6996149B2 (en) * 2002-02-19 2006-02-07 The Furukawa Electric Co., Ltd. Semiconductor laser device and semiconductor laser module
AU2003227230A1 (en) * 2002-04-04 2003-10-20 Sharp Kabushiki Kaisha Semiconductor laser device
GB0306279D0 (en) 2003-03-19 2003-04-23 Bookham Technology Plc High power semiconductor laser with large optical superlattice waveguide
JP2005167137A (ja) * 2003-12-05 2005-06-23 Mitsubishi Electric Corp 半導体レーザ装置
JP4622466B2 (ja) * 2004-11-12 2011-02-02 日亜化学工業株式会社 窒化物半導体素子
EP2015412B1 (de) * 2007-07-06 2022-03-09 Lumentum Operations LLC Halbleiter-Laser mit schmaler Strahldivergenz.
JP2012019040A (ja) * 2010-07-07 2012-01-26 Furukawa Electric Co Ltd:The 面発光レーザ

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58175887A (ja) * 1983-03-18 1983-10-15 Hitachi Ltd 半導体レ−ザ装置
US4706254A (en) * 1983-05-12 1987-11-10 Canon Kabushiki Kaisha Semiconductor device and its fabrication
JPS60189983A (ja) * 1984-03-12 1985-09-27 Nec Corp 半導体発光素子
JPS62193192A (ja) * 1986-02-19 1987-08-25 Sharp Corp 半導体レ−ザ素子
JPS62257782A (ja) * 1986-05-01 1987-11-10 Mitsubishi Electric Corp 半導体の加工方法
JPS63150982A (ja) * 1986-12-12 1988-06-23 Fujitsu Ltd 半導体発光装置
JPH03119777A (ja) * 1989-10-02 1991-05-22 Canon Inc 埋込みヘテロ型半導体レーザ装置およびその製造方法
JPH057051A (ja) * 1990-11-09 1993-01-14 Furukawa Electric Co Ltd:The 量子バリア半導体光素子
US5289486A (en) * 1991-02-28 1994-02-22 Omron Corporation Semiconductor luminous element and superlattice structure
US5213995A (en) * 1992-04-16 1993-05-25 At&T Bell Laboratories Method of making an article comprising a periodic heteroepitaxial semiconductor structure
JP3444610B2 (ja) * 1992-09-29 2003-09-08 三菱化学株式会社 半導体レーザ装置
EP0637862A3 (de) * 1993-08-05 1995-05-24 Hitachi Ltd Halbleiterlaservorrichtung und Herstellungsverfahren.

Also Published As

Publication number Publication date
EP0661784A2 (de) 1995-07-05
EP0661784A3 (de) 1995-12-27
EP0661784B1 (de) 2003-03-26
JPH07193333A (ja) 1995-07-28
DE69432345T2 (de) 2003-12-24
US5619518A (en) 1997-04-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee