KR102470083B1 - 저열 임피던스를 갖는 고성능 열 계면 재료 - Google Patents
저열 임피던스를 갖는 고성능 열 계면 재료 Download PDFInfo
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Abstract
Description
도 1은 전자 칩, 히트 스프레더, 히트 싱크와 제1 및 제2 열 계면 재료를 개략적으로 도시한 것이다.
대응 도면 부호는 다수의 도면 전체에 걸쳐 대응 부분을 지시하고 있다. 여기에 설명된 예시들은 본 발명의 예시적인 실시 태양을 예시하고 있고, 이와 같은 예시들은 임의의 방식으로 본 발명의 범주를 한정하는 것으로 해석되어서는 안 된다.
실시예 1 | 비교예 1 | |
엘라스토머(wt.%) | 8.6 | 8.6 |
왁스(wt.%) | 3.1 | 3. |
산화방지제(wt.%) | 0.2 | 0.2 |
티타네이트 커플링제(wt.%) | 1.1 | 1.1 |
알루미늄(wt.%)(5μm) | 72.5 | 87 |
산화 아연(wt.%)(0.6μm) | 14.5 | 0 |
열 임피던스(℃·cm2/W) | 0.091 | 0.10. |
실시예 2 | 실시예 3 | 실시예 4 | 비교예 2 | |
엘라스토머(wt.%) | 8.7 | 8.7 | 8.7 | 8.7 |
왁스(wt.%) | 3.1 | 3.1 | 3.1 | 3.1 |
산화방지제(wt.%) | 0.1 | 0.1 | 0.1 | 0.1 |
아미노 수지(wt.%) | 0.6 | 0.6 | 0.6 | 0.6 |
티타네이트 커플링제(wt.%) | 1.5 | 1.5 | 1.5 | 1.5 |
알루미늄(wt.%)(3μm) | 71.67 | 71.67 | 71.67 | 71.67 |
산화 아연(wt.%)(0.9μm) | 14.33 | 14.33 | 14.33 | 14.33 |
열 임피던스(℃·cm2/W) | 0.106 | 0.079 | 0.115 | 0.098 |
실시예5 | 실시예6 | 실시예7 | 실시예8 | 실시예9 | 실시예10 | 비교예3 | 비교예4 | 비교예5 | |
엘라스토머 (wt.%) |
6.2 | 5.27 | 4.6 | 4.6 | 3.94 | 3.94 | 4.6 |
5.42 | - |
왁스 (wt.%) |
1.4 | 1.5 | 1.31 | 1.31 | 1.12 | 1.12 | 1.31 | 1.50 | - |
산화방지제 (wt.%) |
0.1 | 0.42 | 0.37 | 0.37 | 0.31 | 0.31 | 0.37 | 0.4 | - |
티타네이트 커플링제(wt.%) | 1.3 | 0.57 | 0.72 | 0.72 | 0.74 | 0.74 | 0.72 | 0.68 | - |
알루미늄 (wt.%)(6.7μm) |
74 | 76.9 | 77.5 | 67.13 | 78.24 | 67.06 | 67.13 | 92 | - |
산화아연 (wt.%)(0.9μm) |
17 | 15.34 | 15.5 | 25.87 | 15.65 | 26.83 | - | - | - |
알루미나 (wt.%)(0.8μm) |
- | - | - | - | - | - | 25.87 | - | - |
필러 부하 (wt.%) |
91 | 92 | 93 | 93 | 94 | 94 | 93 | 92 | - |
접착층두께 (μm) |
- | - | - | 25 | - | 28 | 28 | 30 | - |
열 임피던스 (℃·cm2/W) |
- | - | - | 0.07 | - | 0.08 | 0.09 | 0.09 | 0.1 |
재료 | 샘플 번호 | 열 임피던스(AC) | 열 임피던스(HAST96시간) |
실시예 8 | 1 | 0.08 | 0.08 |
2 | 0.08 | 0.08 | |
3 | 0.08 | 0.08 | |
4 | 0.08 | 0.08 |
재료 | 샘플 번호 | 열 임피던스(AC) | 열 임피던스 (150베이킹/1000hr) |
실시예 8 | 1 | 0.07 | 0.07 |
2 | 0.08 | 0.07 | |
3 | 0.08 | 0.07 | |
4 | 0.07 | 0.07 |
Claims (3)
- 수소화된 폴리부타디엔 모노-올 또는 디올을 포함하는 적어도 하나의 폴리머;
열 계면 재료의 총 중량을 기준으로 1중량% 내지 5중량%의 총 함량으로 존재하는 적어도 하나의 왁스를 포함하는 적어도 하나의 상 변화 재료;
1 내지 15 미크론의 제1 입자 크기를 갖는 알루미늄 입자인 제1 열전도성 금속 필러;
1 내지 5 미크론의 제2 입자 크기를 갖는 알루미늄 입자인 제2 열전도성 필러; 및
0.5 내지 1 미크론의 제3 입자 크기를 갖는 산화 아연 입자인 제3 열전도성 필러;를 포함하는 열 계면 재료이며,
상기 제1 입자 크기는 상기 제2 입자 크기보다 크고,
상기 제2 입자 크기는 상기 제3 입자 크기보다 크며,
상기 제1 열전도성 금속 필러, 제2 열전도성 필러 및 제3 열전도성 필러의 총 함량은 열 계면 재료의 총 중량을 기준으로, 93중량% 내지 98.9중량% 미만이고,
상기 열 계면 재료는 40psi의 압력이 가해지고 80℃로 가열될 때 5 미크론 내지 25 미크론의 접착층 두께(BLT)를 갖는 것인, 열 계면 재료.
- 제1항에 있어서,
열 계면 재료의 총 중량을 기준으로 0.1중량% 내지 2.0중량%의 양으로 존재하는 적어도 하나의 티타네이트 커플링제를 더 포함하는 것인 열 계면 재료.
- 히트 싱크;
전자 칩;
상기 히트 싱크 및 전자 칩 사이에 위치하는 열 계면 재료를 포함하는 전자 부품이며,
상기 열 계면 재료는
수소화된 폴리부타디엔 모노-올 또는 디올을 포함하는 적어도 하나의 폴리머;
열 계면 재료의 총 중량을 기준으로 1중량% 내지 5중량%의 총 함량으로 존재하는 적어도 하나의 왁스를 포함하는 적어도 하나의 상 변화 재료;
1 내지 15 미크론의 제1 입자 크기를 갖는 알루미늄 입자인 제1 열전도성 금속 필러;
1 내지 5 미크론의 제2 입자 크기를 갖는 알루미늄 입자인 제2 열전도성 필러; 및
0.5 내지 1 미크론의 제3 입자 크기를 갖는 산화 아연 입자인 제3 열전도성 필러;를 포함하고,
상기 제1 입자 크기는 상기 제2 입자 크기보다 크고,
상기 제2 입자 크기는 상기 제3 입자 크기보다 크며,
상기 제1 열전도성 금속 필러, 제2 열전도성 필러 및 제3 열전도성 필러의 총 함량은 열 계면 재료의 총 중량을 기준으로, 93중량% 내지 98.9중량% 미만이고,
상기 열 계면 재료는 40psi의 압력이 가해지고 80℃로 가열될 때 5 미크론 내지 25 미크론의 접착층 두께(BLT)를 갖는 것인, 전자 부품.
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PCT/CN2014/093138 WO2016086410A1 (en) | 2014-12-05 | 2014-12-05 | High performance thermal interface materials with low thermal impedance |
KR1020177017616A KR20170091669A (ko) | 2014-12-05 | 2014-12-05 | 저열 임피던스를 갖는 고성능 열 계면 재료 |
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KR (2) | KR20170091669A (ko) |
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ES (1) | ES2886846T3 (ko) |
MX (1) | MX390215B (ko) |
MY (1) | MY183994A (ko) |
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